IRHM57264SE
Abstract: 254 DIODE
Text: PD - 93798A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254 IRHM57264SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) 0.066Ω ID 35A* TO-254 International Rectifier’s R5TM technology provides
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3798A
O-254)
IRHM57264SE
IRHM57264SE
O-254
o252-7105
254 DIODE
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Untitled
Abstract: No abstract text available
Text: PD - 93798 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254 IRHM57264SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) 0.066Ω ID 35A* TO-254 International Rectifier’s R5TM technology provides
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O-254)
IRHM57264SE
O-254
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APT17N80CC3
Abstract: No abstract text available
Text: APT17N80CC3 800V 11.5A 0.320Ω Super Junction MOSFET TO-254 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-254 Package D G S MAXIMUM RATINGS Symbol VDSS
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APT17N80CC3
O-254
O-254
APT17N80CC3
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LM1247
Abstract: No abstract text available
Text: LM1236 LM1236 150 MHz I2C Compatible RGB Preamplifier with Internal 254 Character OSD ROM, 512 Character RAM and 4 DACs Literature Number: SNVS249 September 2003 LM1236 150 MHz I2C Compatible RGB Preamplifier with Internal 254 Character OSD ROM, 512 Character RAM and 4
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LM1236
LM1236
SNVS249
LM2479/clocks
LM1247
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Untitled
Abstract: No abstract text available
Text: LM1237 LM1237 150 MHz I2C Compatible RGB Preamplifier with Internal 254 Character OSD and 4 DACs Literature Number: SNVS166E LM1237 150 MHz I2C Compatible RGB Preamplifier with Internal 254 Character OSD and 4 DACs General Description The LM1237 pre-amp is an integrated CMOS CRT preamp.
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LM1237
LM1237
SNVS166E
LM2479
LM2480
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Untitled
Abstract: No abstract text available
Text: APT6045CVR 600V 11.8A 0.450Ω POWER MOS V TO-254 TO-254 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6045CVR
O-254
O-254
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Untitled
Abstract: No abstract text available
Text: OM4203SA/RA/DA OM4216SA/RA/DA OM4215SA/RA/DA HERMETIC TO-254 SCHOTTKY CENTER-TAP RECTIFIER 25 Amp, 45, 60 and 100 Volt Schottky Rectifier FEATURES • • • • • • • Very Low Forward Voltage Fast Switching Speed Hermetic Metal Package, TO-254 Outline
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OM4203SA/RA/DA
OM4216SA/RA/DA
OM4215SA/RA/DA
O-254
MIL-S-19500,
OM4203SA
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RG 2006 10A 600V
Abstract: LMOS APT20N60CC3 TF114
Text: APT20N60CC3 600V 14A Super Junction MOSFET 0.210Ω TO-254 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-254 Package D G S MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified.
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APT20N60CC3
O-254
O-254
RG 2006 10A 600V
LMOS
APT20N60CC3
TF114
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OM4203SA
Abstract: OM4215SA OM4216SA
Text: OM4203SA/RA/DA OM4216SA/RA/DA OM4215SA/RA/DA HERMETIC TO-254 SCHOTTKY CENTER-TAP RECTIFIER 25 Amp, 45, 60 and 100 Volt Schottky Rectifier FEATURES • • • • • • • Very Low Forward Voltage Fast Switching Speed Hermetic Metal Package, TO-254 Outline
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OM4203SA/RA/DA
OM4216SA/RA/DA
OM4215SA/RA/DA
O-254
MIL-S-19500,
OM4203SA
OM4203SA
OM4215SA
OM4216SA
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Untitled
Abstract: No abstract text available
Text: APT5032CVR 500V 14A 0.320Ω POWER MOS V TO-254 TO-254 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5032CVR
O-254
O-254
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COM4203A
Abstract: COM4215A COM4216A
Text: COM4203A COM4215A COM4216A COTS COMMERCIAL OFF-THE-SHELF SCHOTTKY CENTER-TAP RECTIFIER IN TO-254 PA C K A G E 20 Amp, 45, 60 and 100 Volt Schottky Rectifier FEATURES • • • • • Very Low Forward Voltage Fast Switching Speed Hermetic Metal Package, TO-254 Outline
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COM4203A
COM4215A
COM4216A
O-254
O-254
COM4203A
COM4215A
COM4216A
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Untitled
Abstract: No abstract text available
Text: APT6045CVR Ω 0.50Ω 600V 11.4A POWER MOS V TO-254 TO-254 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6045CVR
O-254
O-254
APT6045CVR
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B540C-13-F
Abstract: HPA254 10TPB330M C1608X7R1H103K TPS5450 Keystone 5001
Text: User's Guide SLVU211 – April 2007 TPS5450EVM-254 5-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 1 Test Setup and Results . 3
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SLVU211
TPS5450EVM-254
TPS5450
B540C-13-F
HPA254
10TPB330M
C1608X7R1H103K
TPS5450
Keystone 5001
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Variable Capacitance Diodes
Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG02
CRG01
CRG04
CMG06
Variable Capacitance Diodes
1SV283B
2fu smd transistor
bidirectional zener diode
015DZ4
015AZ15
CRS06
smd diode Lz zener
general purpose zener diode 256
CMZ24
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2fu smd transistor
Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG02
O-220SM
CRG01
CRG04
CMG03
2fu smd transistor
2FK transistor
3FV 60 43
smd diode Lz zener
HN2S02JE
CMZ24
CRS01
DF2S6.2S
1SV101
1SV283B
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JANTXV 1N6660
Abstract: 1n6660r 1N6660 JANTX 1N6660R JANTX
Text: SENSITRON SEMICONDUCTOR 1N6660, 1N6660R JAN, JANTX JANTXV TECHNICAL DATA DATA SHEET 267, REV. B HERMETIC POWER SCHOTTKY RECTIFIER 45 V, 30 A, TO-254 Package Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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1N6660,
1N6660R
O-254
JANTXV 1N6660
1N6660 JANTX
1N6660R JANTX
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1N5719
Abstract: No abstract text available
Text: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 1N5719 PACKAGE STYLE 01 .075(1.9051 .065(1.651) DESCRIPTION: 1.0 MIN (254) 2 PLACES The1N5719 is a Silicon PIN Diode Designed for General Purpose
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1N5719
The1N5719
100mA
1N5719
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IR-8
Abstract: No abstract text available
Text: SSR3515CTM Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET TO-254 35 AMP /150 Volts CENTER TAP (COMMON CATHODE) POWER SCHOTTKY DIODE
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SSR3515CTM
O-254
125oC)
175oC)
SSR3515CTM;
SSR3515CTMDB;
SSR3515CTMUB
O-254)
IR-8
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OM4203SA
Abstract: OM4215SA OM4216SA
Text: OM4203SA/RA/DA OM4216SA/RA/DA OM4215SA/RA/DA HERMETIC TO-254 SCHOTTKY CENTER-TAP RECTIFIER 25 Am p, 45, 60 and 100 Volt S ch o ttky R ectifier FEATURES Very Low Forward Voltage Fast Switching Speed Hermetic Metal Package, TO-254 Outline Low Thermal Resistance
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OM4203SA/RA/DA
OM4216SA/RA/DA
OM4215SA/RA/DA
O-254
MIL-S-19500,
siz15XX
OM4216XX
300/js,
OM4203SA
OM4203SA
OM4215SA
OM4216SA
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Untitled
Abstract: No abstract text available
Text: OM4203SA/RA/DA OM4216SA/RA/DA OM4215SA/RA/DA HERMETIC TO-254 SCHOTTKY CENTER-TAP RECTIFIER 25 Am p, 45, 60 and 100 Volt S ch o ttky R ectifier FEATURES Very Low Forward Voltage Fast Switching Speed Hermetic Metal Package, TO-254 Outline Low Thermal Resistance
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OM4203SA/RA/DA
OM4216SA/RA/DA
OM4215SA/RA/DA
O-254
MIL-S-19500,
applica72
OM4215XX
300ps,
OM4216XX
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lb 122 s
Abstract: LB-502DN
Text: Index Index • L ig h t Emitting Diodes LA-101 AK Series . 179 LM-0701 Series . 254 LA-101DN S e rie s. 181
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LA-101
LA-101DN
LA-121
LA-131
LA-301
LA-401
LA-421
LA-501
LA-601
RLD-78MV
lb 122 s
LB-502DN
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Untitled
Abstract: No abstract text available
Text: OM4203SA/RA/DA OM4216SA/RA/DA OM4215SA/RA/DA HERMETIC TO-254 SCHOTTKY CENTER-TAP RECTIFIER 25 A m p . 45. 60 a n d 100 Volt S c h o t t k y R e c t i f i e r FEATURES • • • • • • • Very Low Forward Voltage Fast Switching Speed Hermetic Metal Package, TO-254 Outline
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OM4203SA/RA/DA
OM4216SA/RA/DA
OM4215SA/RA/DA
O-254
MIL-S-19500,
300//S,
0M42Q3SA
0M4215SA
OM4216SA
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300V switching transistor
Abstract: 400V INDUSTRIAL voltage regulator 300V series regulators schematic diagram ac-dc inverter schematic diagram dc-ac inverter Series Connection high speed diodes 30A PPR1352 PPR1352R PPR1353 PPR1353R
Text: QIIJD Hermetic TO-254 Center-Tap Diodes PPR1352 PPR1353 PPR1354 PPR1355 FEATURES ABSOLUTE MAXIMUM RATINGS • Very Low Forward Voltage Peak Inverse Voltage, PPR1352, PPR1352R 200V • Very Fast S w itching Speed Peak Inverse Voltage, PPR1353, PPR1353R 300V
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PPR1352
PPR1353
PPR1354
PPR1355
O-254
PPR1352,
PPR1352R
PPR1353,
PPR1353R
PPR1354,
300V switching transistor
400V INDUSTRIAL voltage regulator
300V series regulators
schematic diagram ac-dc inverter
schematic diagram dc-ac inverter
Series Connection high speed diodes 30A
PPR1353
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BL P9n
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D bbSBTBl 0D27Dfl3 254 « A P X Philips Semiconductors Product specification Double low-voltage avalanche regulator diodes PLVA2600A series QUICK REFERENCE DATA FEATURES • Very low dynamic impedance at low current • Hard breakdown knee
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0D27Dfl3
PLVA2600A
PLVA2653A
PLVA2656A
PLVA2659A
PLVA2662A
PLVA2665A
PLVA2668A
BL P9n
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