78xx 79xx
Abstract: ICM555 TDA8844 TDA8842 ic TDA8842 lmc556 79xx voltage regulator uA4558 LM556 PWM tl494 motor
Text: INTEGRAL KOEA pn mfr case desc1 Altenate1 Alternate1-mfr IL1085 IK-Semi TO-220/252/263 Low Dropout Voltage Regulator LT1085 LT IL1084 IK-Semi TO-220/252/263 Low Dropout Voltage Regulator LT1084 LT LT IL1083 IK-Semi TO-220/252/263 Low Dropout Voltage Regulator
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IL1085
O-220/252/263
LT1085
IL1084
LT1084
IL1083
LT1083
IL9270N
78xx 79xx
ICM555
TDA8844
TDA8842
ic TDA8842
lmc556
79xx voltage regulator
uA4558
LM556 PWM
tl494 motor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Diodes MBRD6100CT Schottky barrier rectifier TO-252 FEATURES z Extremely fast switching z Extremely low forward drop 1 2 4 3 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol
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O-252
MBRD6100CT
O-252
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TDA8844
Abstract: TDA8842 NE555 PHILIPS ic TDA8842 KA7500 lmc556 ICM555 LM358 UTC il1458 79xx voltage regulator
Text: INTEGRAL KOEA pn mfr case IL1085 IK-Semi TO-220/252/263 IL1084 IK-Semi TO-220/252/263 IL1083 IK-Semi TO-220/252/263 IL9270N IK-Semi DIP18 IL91350A IK-Semi DIP20/SOP20 IL6083B IK-Semi DIP8 IL6270 IK-Semi DIP8 IL91531N IK-Semi DIP16 IL9151-3 IK-Semi DIP16 IL91260C
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IL1085
O-220/252/263
IL1084
IL1083
IL9270N
DIP18
IL91350A
DIP20/SOP20
TDA8844
TDA8842
NE555 PHILIPS
ic TDA8842
KA7500
lmc556
ICM555
LM358 UTC
il1458
79xx voltage regulator
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L MJD127 Plastic-Encapsulate Transistors TO-252-2L TRANSISTOR PNP FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER
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O-252-2L
MJD127
TIP127
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TRANSISTOR tip122
Abstract: MJD122 TIP122 TO252-2
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2 TRANSISTOR NPN FEATURES 1. BASE • · · High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C
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O-251/TO-252-2
MJD122
O-251
O-252-2
TIP122
TRANSISTOR tip122
MJD122
TIP122
TO252-2
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 MJD122 Plastic-Encapsulate Transistors TRANSISTOR（NPN） TO-252 FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR 3.EMITTER
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O-252
MJD122
TIP122
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors MJD122 TRANSISTOR（NPN） TO-252-2L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR
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O-252-2L
MJD122
O-252-2L
TIP122
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD127 TRANSISTOR NPN FEATURES • · · 1. BASE High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C 2. COLLECTOR
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O-251/TO-252-2Plastic-Encapsulate
O-251
O-252-2
MJD127
TIP127
-100V
-16mA
-80mA
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AQW212
Abstract: AQW212A AQW212AX AQW212AZ AQW214 AQW215 AQW215A AQW215AX AQW215AZ AQW217
Text: GU General Use Type [2-Channel (Form A) Type] FEATURES 6.4 .252 3.9±0.2 .154±.008 9.78 .385 6.4 .252 3.6±0.2 .142±.008 9.78 .385 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 x (L) 9.78 ×(H) 3.9 mm (W) .252×(L)
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AQW212
AQW215
AQW216
AQW210
AQW214
AQW216
AQW210
AQW217
AQW212
AQW212A
AQW212AX
AQW212AZ
AQW214
AQW215
AQW215A
AQW215AX
AQW215AZ
AQW217
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Untitled
Abstract: No abstract text available
Text: GU General Use Type [2-Channel (Form A) Type] FEATURES 6.4 .252 3.9±0.2 .154±.008 9.78 .385 6.4 .252 3.6±0.2 .142±.008 9.78 .385 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 x (L) 9.78 ×(H) 3.9 mm (W) .252×(L)
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AQW214)
AQW212
AQW215
AQW216
AQW210
AQW214
AQW217
AQW214
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Untitled
Abstract: No abstract text available
Text: GU General Use Type [2-Channel (Form A) Type] FEATURES 6.4 .252 3.9±0.2 .154±.008 9.78 .385 6.4 .252 3.6±0.2 .142±.008 9.78 .385 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 x (L) 9.78 ×(H) 3.9 mm (W) .252×(L)
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AQW214)
AQW212
AQW215
AQW216
AQW210
AQW214
AQW217
AQW214
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2L TRANSISTOR（NPN） FEATURES 1.BASE ∙ High DC current gain ∙ Electrically similar to popular TIP122 ∙ Built-in a damper diode at E-C
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O-251/TO-252-2L
MJD122
O-251
O-252-2L
TIP122
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mjd127
Abstract: TIP127
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD127 TRANSISTOR PNP FEATURES • · · 1. BASE High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C 2. COLLECTOR
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O-251/TO-252-2Plastic-Encapsulate
O-251
O-252-2
MJD127
TIP127
-100V
-16mA
-80mA
Width380
mjd127
TIP127
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD127 TRANSISTOR PNP FEATURES • · · 1. BASE High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C 2. COLLECTOR
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O-251/TO-252-2Plastic-Encapsulate
O-251
O-252-2
MJD127
TIP127
-100V
-16mA
-80mA
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|
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 MJD127 Plastic-Encapsulate Transistors TO-252 TRANSISTOR PNP FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-252
MJD127
TIP127
-100V
-16mA
-80mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-252
CJU01N60
O-252
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-252
CJU02N60
O-252
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CHM25N15LPAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CHM25N15LPAGP CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small package. (TO-252)
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CHM25N15LPAGP
O-252)
250uA
CHM25N15LPAGP
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2 form c ssr
Abstract: aqw214ax AQW216 ssr schematic circuit AQW212 AQW212A AQW212AX AQW212AZ AQW214 AQW215
Text: GU PhotoMOS AQW21P Compact DIP (2 Form A) 8-pin type. Controls load voltage 60V to 600V. FEATURES 6.4 .252 9.78 .385 3.9 .154 6.4 .252 3.6 .142 9.78 .385 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 x (L) 9.78 ×(H) 3.9 mm (W) .252×(L)
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AQW21
AQW212
AQW215
AQW216
AQW210
AQW214
AQW216
AQW210
AQW217
2 form c ssr
aqw214ax
ssr schematic circuit
AQW212
AQW212A
AQW212AX
AQW212AZ
AQW214
AQW215
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CHM05N65PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small flat package. D-PAK(TO-252)
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CHM05N65PAGP
O-252)
250uA
CHM05N65PAGP
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npn ie 4a
Abstract: TIP127 NPN Transistor 8A
Text: MJD127 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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O-251/TO-252-2L
MJD127
O-251
TIP127
O-252-2L
-30mA
-100V
-16mA
-80mA
npn ie 4a
NPN Transistor 8A
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100C
Abstract: No abstract text available
Text: SSD01L60 1A, 600V,RDS ON 12Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente Description TO-252 The SSD01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. Features
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SSD01L60
O-252
O-252)
01-Jun-2002
100C
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Untitled
Abstract: No abstract text available
Text: GB01SLT12-252 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SLT12-252. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * * GeneSiC Semiconductor Inc.
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GB01SLT12-252
GB01SLT12-252.
04-SEP-2013
GB01SLT12-252
TEMP-24)
GB01SLT12
27E-19
90E-11
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Untitled
Abstract: No abstract text available
Text: GB05SLT12-252 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SLT12-252. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * * GeneSiC Semiconductor Inc.
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GB05SLT12-252
GB05SLT12-252.
04-SEP-2013
GB05SLT12-252
TEMP-24)
GB05SLT12
83E-18
00E-10
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