Q67100-H5092
Abstract: SDA 2516-5
Text: Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features ● Word-organized reprogrammable nonvolatile memory ● ● ● ● ● ● ● ● ● in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V
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Q67100-H5092
Q67100-H5092
SDA 2516-5
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2546-5
Abstract: Q67100-H5092 Q67100-H5095 Q67100-H5096 Q67100-H5101 AM Transmitter block diagram
Text: Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features ● Word-organized reprogrammable nonvolatile memory ● ● ● ● ● ● ● ● ● in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V
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Q67100-H5092
2546-5
Q67100-H5092
Q67100-H5095
Q67100-H5096
Q67100-H5101
AM Transmitter block diagram
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CDC2509
Abstract: 2516 memory CDC2510 CDC2516 CDC509 CDC516 TMS320 abstract for 4g technology SIGNAL PATH DESIGNER 2516
Text: High Speed Clock Distribution Design Techniques for CDC 509/516/2509/2510/2516 APPLICATION REPORT: SLMA003A Boyd Barrie Bus Solutions Mixed Signals DSP Solutions September 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any
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SLMA003A
60Volt,
CDC516
CDC2516
CDC2509
2516 memory
CDC2510
CDC2516
CDC509
CDC516
TMS320
abstract for 4g technology
SIGNAL PATH DESIGNER
2516
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Untitled
Abstract: No abstract text available
Text: Data Sheet Handheld Digital Storage Oscilloscopes 2510 Series Features and Benefits • 60 MHz 2511/2515 and 100 MHz (2512/2516) bandwidth ■ 1 GSa/s sample rate ■ Deep waveform memory up to 2 Mpts ■ 2 fully isolated and floating 1,000 V CAT II, 600 V CAT III rated inputs (isolated models
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6000-count
2510nt
v040714
BP2510,
LC2510
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toshiba onenand
Abstract: Datasheet ONENAND hynix nand flash oneNand flash OneNAND reader HY27UA081G1M nand flash HYNIX OneNAND reset nand flash HYNIX TMS320DM35x
Text: TMS320DM35x Digital Media System-on-Chip DMSoC Asynchronous External Memory Interface (EMIF) Reference Guide Literature Number: SPRUED1B May 2006 – Revised October 2007 2 SPRUED1B – May 2006 – Revised October 2007 Submit Documentation Feedback Contents
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TMS320DM35x
toshiba onenand
Datasheet ONENAND
hynix nand flash
oneNand flash
OneNAND reader
HY27UA081G1M
nand flash HYNIX
OneNAND
reset nand flash HYNIX
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microchip 1414
Abstract: application notes
Text: Table of Contents PAGE COMPANY PROFILE 1-1 SECTION 1. INTRODUCTION 1-1 Introduction . 1-2 Manual Objective . 1-3
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DS39500A-page
microchip 1414
application notes
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169-pin
Abstract: CT-L50LT01-IC ct-l50at81 AC97 Diagram of ADSL CPE Analog Front End Centillium Communications
Text: Universal Flite Optimizer Universal Full-Rate ADSL System Chipsets for CPE Features Overview n Compliant with — — — — The Universal Flite Optimizer is a chipset for a full-rate ADSL modem, consisting of three chips, a DSP chip, an analog front end, and a line driver.
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CT-L62SX81-01-v1
169-pin
CT-L50LT01-IC
ct-l50at81
AC97
Diagram of ADSL CPE Analog Front End
Centillium Communications
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ad6485
Abstract: eia-232 DHCP AD6482 AD6483 AD6484 G994
Text: Analog Devices: RF Comms: EIA-232/422/485 Transceivers Products Selection Table Page 1 of 2 EIA-232/422/485 Transceivers Products Selection Table Eagle Product Selection Table AD6482 Eagle UTOPIA AD6483 Eagle PCI AD6484 Eagle USB AD6485 Eagle-II • PCI Modem
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EIA-232/422/485
AD6482
AD6483
AD6484
AD6485
ad6485
eia-232
DHCP
AD6482
AD6483
AD6484
G994
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SDE2516
Abstract: Q67100-H8442 2516 memory MOS 2516 2516 8 pin
Text: Nonvolatile Memory 1-KBit E2PROM with l2C Bus Interlace Preliminary Data M O S IC Type Ordering Code Package SDE 2516 Q 67100-H 8442 P-DIP-8 Features • • • • • • • • • SDE 2516 W ord-organized reprogram m able nonvolatile memory in n-channel floating-gate technology E2PROM
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Q67100-H8442
SDE2516
2516 memory
MOS 2516
2516 8 pin
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SIEMENS BSt L 45 100
Abstract: 0D4T
Text: bOE ] • flE3SbDS DD4T371 274 M S I E S SIEM ENS SIEMENS AKTIENGESELLSCHAF Nonvolatile Memory 1-Kbit E2PROM with I 2C Bus SDA 2516-2 Preliminary Data MOS IC Features • W ord-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM)
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DD4T371
SIEMENS BSt L 45 100
0D4T
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2516 memory
Abstract: No abstract text available
Text: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with I2C Bus Interface SDA 2516 MOS IC Features W ord-organized reprogram mable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V Serial 2-line bus for data input and output (12C Bus)
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25X16-5
25X16
Q67100-H5092
67100-H3252
67100-H3255
67100-H3256
2516 memory
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UEI 20 SP
Abstract: 2516 prom JE350
Text: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM with I2C Bus SD A 2516-2 Preliminary Data MOS IC Features • Word-organized, reprogrammable nonvolatile memory In n-channel floating-gate technology E2PROM • 128 x 8 bit organization • Supply voltage 5 V
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Q67100-H5002
UEI 20 SP
2516 prom
JE350
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Q67100-H5092
Abstract: SDA 2516-5
Text: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • • • • • • • • • • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V
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Q67100-H5092
00b3272
SDA 2516-5
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Untitled
Abstract: No abstract text available
Text: SIEMENS Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)
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Q67100-H5092
B235b05
0Gb3272
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TI-85
Abstract: No abstract text available
Text: SIEM ENS Nonvolatile Memory 1-Kbit E2PROM with I^C Bus SD A 2516-2 Preliminary Data MOSIC Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8 bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)
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Q67100-H5002
TI-85
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2516 rom
Abstract: No abstract text available
Text: 2516-N.I TRUTH TABLE PIN CONFIGURATION f f l O R I C f DESCRIPTION AC TEST SETUP f f l C TIMING DIAGRAM t* * u CHARACTER ADDRESS/ 1 V, COLUMN ADDRESS «A,-A3> *o 2'T , r aov f\ I i V o .w X » . ; : / “ V P A » v _ 55 ' r ^ - lC L A - ^ CHARACTER FORMAT
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2516-N
6G6GG6666666G666GGG66B66666666666GG66GS6G
2516 rom
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j937
Abstract: 2S16D 16-MT
Text: MICRON TECHNOLOGY INC 55E 5 b i l l 54*1 • P ÌIC R O M 16 K MILITARY SRAM DIE a 16 0005*117 bST ■MRN M T 5 C 2516 D IE L A T C H E D SRA M 16Kx 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • Fast access times: 20,25 and 35ns • Single +5V ±10% power supply
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MT5C2516CME
j937
2S16D
16-MT
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CM2150
Abstract: 415V Power circuit design 2516N 64X6X8 led matrix 5x7 coding Signetics TTL AS11 A2916
Text: S îQ IIB t iE S CHARACTER GENERATOR 2516 SILICON GATE MOS 2500 SERIES DESCRIPTION SILICO N E PACKAGING T h e Signetics 2 6 1 6 i> a 30 72-b it S ta tic R O M organized as L o w cost silico ne D IP packaging is implem ented and reli* 6 4 x 6 x 8 . T h e p rod uct uses + 5 V , - S V and - 1 2 V pow er sup
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64X6X8
3072-bit
64x6x8.
2616/CM
24-PIN
CM2150
415V Power circuit design
2516N
led matrix 5x7 coding
Signetics TTL
AS11
A2916
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2516 memory
Abstract: 74BCT2827
Text: HIGH SPEED BiCMOS 10-BIT MEMORY DRIVERS ADVANCE INFORMATION IDT54/74FBT2827A/B IDT54/74FBT2828A/B Integrated Device Technology, Inc. FEATURES DESCRIPTION • IDT54/74FBT2827A/2828A is equivalent to 54/74BCT2827A/2828A The FBT series of BiCMOS Memory Drivers are built using
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10-BIT
IDT54/74FBT2827A/B
IDT54/74FBT2828A/B
IDT54/74F
BT2827A/2828A
54/74BCT2827A/2828A
IDT54/74FBT2827B/2828B
MIL-STD-883,
FBT2828A
FBT2828B
2516 memory
74BCT2827
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Untitled
Abstract: No abstract text available
Text: _ S-201000 1M-bit CMOS MASK ROM The S-201000 is a high-speed, low-power 1,048,576-bit 131,072 words x 8 bits mask programmable ROM, that uses the C M O S process. The control pin can be selected from chip select, chip enable, and output
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S-201000
S-201000
576-bit
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2316 rom
Abstract: 2332 rom 2364 eprom GR2532 2332 rom 4k 2532EPROM eprom 2532 2516EPROM eprom 2516 2364 rom
Text: GREENWICH INSTRUMENTS LTD 4bE D M1H4774 QOOOOat. =1 • GRNU lilfttNWIIill INSTRUMENTS LTD T - f a ' Z Z ' 3~? G R2516 2K x 8 GR2532 (4K x 8) GR2364 (8K x 8) nonvolatile memory products ROM/EPROM Emulators • Plug-in replacement for ROMS/EPROMS • Retains data for up to 10 years
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M1H4774
R2516
GR2532
GR2364
24-pin
GR2516
2516EPROM
GR2532
2532EPROM
GR2364
2316 rom
2332 rom
2364 eprom
2332 rom 4k
2532EPROM
eprom 2532
2516EPROM
eprom 2516
2364 rom
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NMC2564
Abstract: 2532 prom
Text: NMC2564 National MOS EPROMs PREVIEW Semiconductor NMC2564 64k-Bit 8k x 8 UV Erasable PROM General Description Features The NMC2564 is a 65,536-bit EPROM operating from a , • Single 5V power suppiy ') single 5V power supply. This device is an ultraviolet ■ 450 ns max access time
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NMC2564
64k-Bit
536-bit
0510s
A0-A12
2532 prom
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2532 prom
Abstract: 2516 prom eprom 2516 2516 eprom eprom 2532 NMC2564 12-mW-cm2 Q108
Text: NMC2564 National Semiconductor MOS EPROMs PREVIEW NMC2564 64k-Bit 8k x 8 UV Erasable PROM General Description Features The NMC2564 is a 65,536-bit EPROM operating from a . • Single 5V power supply 3 single 5V power supply. This device is an ultraviolet
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NMC2564
64k-Bit
536-bit
A0-A12
2532 prom
2516 prom
eprom 2516
2516 eprom
eprom 2532
12-mW-cm2
Q108
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Untitled
Abstract: No abstract text available
Text: I* as IMT5C2516 16K X 16 LATCHED SRAM LATCHED SRAM 16K x 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • • • • • Fast access times: 15,20 and 25ns Fast OE: 6 ,8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power
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IMT5C2516
52-Pin
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