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    250WATTS RF TRANSISTORS Search Results

    250WATTS RF TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    250WATTS RF TRANSISTORS Datasheets Context Search

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    VTV1250

    Abstract: 250Watts RF transistors C12200
    Text: VTV1250 125 Watts, 28Volts, Class AB VHF Television - Band III GENERAL DESCRIPTION CASE OUTLINE The VTV 1250 is a COMMON EMITTER transistor capable of providing 125 Watts Peak, Class AB, RF Output Power over the band 175 - 225 MHz. The transistor includes double input and output prematching for full broadband


    Original     		PDF VTV1250 28Volts, 250Watts Tempera4-40 VTV1250 250Watts RF transistors C12200