tf 216 10a 250v
Abstract: W01-01H 10Amp 250V Thermal CUTOFF K10B-142 thermal cutoff fuse 5050 ir led tf 77 10a 250v thermal-cutoff K10B-103
Text: Type K10B Thermal Cutoff Temperature rated Fuse 10Amp Axial Leaded www.optifuse.com (619) 593-5050 Ratings: Ampere Rating: 10A Axial Leaded Voltage Rating: 250V AC Agency Standards and Listings: Part Number K10B-077 K10B-087 K10B-094 K10B-099 K10B-103 K10B-113
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10Amp
K10B-077
K10B-087
K10B-094
K10B-099
K10B-103
K10B-113
K10B-116
K10B-121
K10B-128
tf 216 10a 250v
W01-01H
10Amp 250V
Thermal CUTOFF
K10B-142
thermal cutoff fuse
5050 ir led
tf 77 10a 250v
thermal-cutoff
K10B-103
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MOSFET 1000v 30a
Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package
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OM9027SP1
OM9029SP1
OM9028SP1
OM9030SP1
OM9027SP1
OM90Surge
300msec,
MOSFET 1000v 30a
10A, 100v fast recovery diode
OM9029SP1
OM9030SP1
diode 1000V 10a
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Untitled
Abstract: No abstract text available
Text: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4167A
O-257AA)
IRFY11N50CMA
O-257AA
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Untitled
Abstract: No abstract text available
Text: PD - 94167 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.53Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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O-257AA)
IRFY11N50CMA
O-257AA
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DM t 96 10a 250v
Abstract: IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR
Text: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4167A
O-257AA)
IRFY11N50CMA
O-257AA
DM t 96 10a 250v
IRFY11N50CMA
4.5V TO 100V INPUT REGULATOR
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DF184S
Abstract: DF128S SDF DF141S DF170S tf 216 10a 250v DF240S E117626 DF141S DF66S DF216S
Text: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts
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E117626
JET2926-32001-1001-1009
HH05009-2004A-2019A
2010/Nov
DF184S
DF128S
SDF DF141S
DF170S
tf 216 10a 250v
DF240S
E117626
DF141S
DF66S
DF216S
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DF216S
Abstract: DF98S DF280S
Text: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts
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E117626
JET2926-32001-1001-1009
HH05009-2004A-2019A
2013/Feb
DF216S
DF98S
DF280S
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2SK1276A
Abstract: No abstract text available
Text: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1276A
2SK1276A
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tf 216 10a 250v
Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
Text: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly
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TJ142D
TJ152D
TJ78D
TJ99D
tf 216 10a 250v
DYE*TCO
DF184S
ISO 8015 tolerance
DYE DF84S
ISO 8015
tf 115 250v 15a
DF240S
250V 10A TF 106
thermoresistor
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limit switch VDE 0660
Abstract: VDE 0660 iec 337 pt TZ-8108 TZ-8167 CS10N061C2 CS10N021C2 CSA-012 CFS-302 TZ-6103 CM1301
Text: com.greegoo.www Greegoo Elextric Co.,Ltd. 2007 Limited Switches Micro and mini type switches Limit Switchs TZ-8 Limit switch Features -• Double circuit type of limit switch
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14VDC
30VDC
125VDC
250VDC
CZ-93BPG01
BPT01
CPG01
CPT01
CSS-25
CZ-93BPG02
limit switch VDE 0660
VDE 0660 iec 337 pt
TZ-8108
TZ-8167
CS10N061C2
CS10N021C2
CSA-012
CFS-302
TZ-6103
CM1301
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2SK1641
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1641 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type π-MOS II High Speed, High Current DC-DC Converter, Chopper Regulator, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance
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2SK1641
2SK1641
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Untitled
Abstract: No abstract text available
Text: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit
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2SK1276A
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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50V/500V
P2H4M441L
P2H4M440L
P2H4M441L
150MAX
-441L
-440L
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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50V/500V
PD4M441L
PD4M440L
PD4M441L
150MAX
-441L
-440L
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Untitled
Abstract: No abstract text available
Text: PD-93837C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHNJ57234SE Radiation Level RDS(on) 100K Rads (Si) 0.40Ω ID 10A International Rectifier’s R5 TM technology provides
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PD-93837C
IRHNJ57234SE
MIL-STD-750,
MlL-STD-750,
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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PD4M441L
PD4M440L
50V/500V
PD4M441L
-441L
-440L
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Mosfet 30A 250V
Abstract: No abstract text available
Text: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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50V/500V
P2H4M441L
P2H4M440L
P2H4M441L
150iMAX
56i/W
-441L
-440L
Mosfet 30A 250V
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Untitled
Abstract: No abstract text available
Text: PD-93837C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number IRHNJ57234SE Radiation Level RDS(on) 100K Rads (Si) 0.40Ω ID 10A International Rectifier’s R5 TM technology provides
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PD-93837C
IRHNJ57234SE
MIL-STD-750,
MlL-STD-750,
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IRHNJ57234SE
Abstract: JANSR2N7487U3 smd diode 64A
Text: PD - 93837A IRHNJ57234SE JANSR2N7487U3 250V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/704 5 TECHNOLOGY Product Summary Part Number IRHNJ57234SE Radiation Level 100K Rads (Si) RDS(on) 0.40Ω ID 10A QPL Part Number
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3837A
IRHNJ57234SE
JANSR2N7487U3
MIL-PRF-19500/704
estab394A/
MIL-STD-750,
MlL-STD-750,
IRHNJ57234SE
JANSR2N7487U3
smd diode 64A
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IRHY57234CMSE
Abstract: T0-257AA
Text: PD - 93823 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57234CMSE 250V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY57234CMSE 100K Rads (Si) 0.41Ω 10A TO-257AA International Rectifier’s R5TM technology provides
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O-257AA)
IRHY57234CMSE
IRHY57234CMSE
O-257AA
MIL-STD-750,
MlL-STD-750,
T0-257AA
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250V 10A TF 240
Abstract: 100-C
Text: Series PTC10000, PTC 10001 NPN Silicon Power Darlington Transistors 20 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts Sustaining • Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS • • • • SPECIFICATIONS
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20/ts
200juH
250V 10A TF 240
100-C
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5V 10A voltage regulators
Abstract: 200mH PTC10009
Text: Series PTC10008, PTC 10009 NPN Silicon Power Darlington Transistors 20 Amperes • 500 Volts FEATURES • High Voltage Rating - 500 Volts Sustaining • Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS • • • • SPECIFICATIONS
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PJC10008,
200mH
5V 10A voltage regulators
200mH
PTC10009
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK1276A N-channel MOS-FET F-V Series 250V > Features - 0,25Q 20 A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings Tc=25°CV
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2SK1276A
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TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
Abstract: 250V 10A TF 106
Text: ì 6 1 1 5 9 5 0 M I C R O S E M I C O R P / P_ OWER 05 V T M C i TECHNOLOGY J 02E 00454 D T 'IfT '3 3 DElbllSTSD D0004S4 7 T~ PTC 1 0 0 0 0 P — — T— i PTC 10001P Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 20 AMPERES . 400 VOLTS
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D0004S4
10001P
O-247
TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
250V 10A TF 106
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