Untitled
Abstract: No abstract text available
Text: EPSON P F658-05 E0C621C 4-bit Single Chip Microcomputer • • • • Core CPU Architecture R/F Converter Remote-control Carrier Output LCD Driver I DESCRIPTION The E0C621C is a single-chip microcomputer made up of the 4-bit core CPU E0C6200A, ROM, RAM, remote
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F658-05
E0C621C
E0C621C
E0C6200A,
768kHz
503AT-2
200pF
C-102
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Untitled
Abstract: No abstract text available
Text: QFET P-CHANNEL FQAF22P10 FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area
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FQAF22P10
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60P06E
Abstract: 6b69e RS111
Text: RFG60P06E m HARRIS S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancem ent-M ode Power MOSFET J a n u a ry 199 6 Features Package JEDEC STYLE TO-247 • 6 0 A ,6 0 V SOURCE • * *D S O N = 0 . 0 3 0 1 2 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M o d e l
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RFG60P06E
O-247
72e-3
43e-3
91e-7
98e-9
11e-1
34e-3
46e-12)
15e-10
60P06E
6b69e
RS111
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FI840
Abstract: No abstract text available
Text: PD -9 .1344A International I R Rectifier IRLIZ24N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS I; Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
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IRLIZ24N
O-22C
FI840
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Untitled
Abstract: No abstract text available
Text: QFET P-CHANNEL FQA22P10 FEATURES BVDSS = • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area
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FQA22P10
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IXTM4N45
Abstract: P-CHANNEL 45A TO-247 POWER MOSFET IXTM4N50 Mosfet K 135 To3
Text: I X Y S CORP iflE D • 4böbESb OOOGblS 2 ■ \ IXTP4N45, IXTP4N50, IXTM4N45, IXTM4N50 □ IX Y S 4 AMPS, 450-500 V, 1.5Q/2.0S2 MAXIMUM RATINGS Parameter IXTP4N45 IXTM4N45 Sym. IXTP4N50 IXTM4N50 Unit Drain-Source Voltage 1 V 0ss 450 500 vrt„ Drain-Gate Voltage (Re s=1.0 MQ) (1)
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1XTP4N45,
IXTP4N50,
IXTM4N45,
IXTM4N50
IXTP4N45
IXTM4N45
IXTP4N50
ELEC420
O-204
IXTM4N45
P-CHANNEL 45A TO-247 POWER MOSFET
Mosfet K 135 To3
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7 S b 4 1 4 B DQlSlMt. ÒSI ■ SM6K N-CHANNEL IRF510/511 /512/513 POWER MOSFETS FEATURES • Lower R d s <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF510/511
IRF510
IRF51
IRF513
IRF511
IRF512
G012150
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ADS902
Abstract: No abstract text available
Text: B U R R -B R O W N E ADS902 1 10-Bit, 30MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • LOW POWER: 130mW The ADS902 is a high speed pipelined analog-todigital converter that is specified to operate from a single +5V supply. This converter includes a wide
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ADS902
10-Bit,
30MHz
130mW
28-PIN
ADS902
10-bit
ADS902.
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Untitled
Abstract: No abstract text available
Text: QFET P-CHANNEL FQB22P10, FQI22P10 FEATURES BVDSS = • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.
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FQB22P10,
FQI22P10
D2PAK/TO-263
D2PAK/TO-263
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76139s
Abstract: MOSFET 76139s Li ION spice model charge 76139p DC Relay 50A
Text: HUF76139P3, HUF76139S3, HUF76139S3S S em iconductor 75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 Features >w • Logic Level Gate Drive • 7 5 A ,3 0 V • Ultra Low On-Resistance, cds ON = 0.0075ii • Temperature Com pensating PSPICE Model
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HUF76139P3,
HUF76139S3,
HUF76139S3S
0075ii
TB334,
O-263AB
330mm
76139s
MOSFET 76139s
Li ION spice model charge
76139p
DC Relay 50A
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Untitled
Abstract: No abstract text available
Text: A p p l i c a t io n N o t e AVAILABLE iconr. - i s AN56 U K X20C16 16K 2K x 8 Bit High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION * Fast Access Time: 35ns, 45ns, 55ns * High Reliability — Endurance: 1,000,000 Nonvolatile Store Operations — Retention: 100 Years Minimum
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X20C16
250piA
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Untitled
Abstract: No abstract text available
Text: QFET P-CHANNEL FQB6P25, FQI6P25 FEATURES BV d s s = -2 5 0 V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 21 nC Typ.
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FQB6P25,
FQI6P25
D2PAK/TO-263
D2PAK/TO-263
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50mF
Abstract: No abstract text available
Text: y k iy j x iy k i Ugh-Frequency Waveform Generator F e a tu re s The MAX038 is a high-frequency, precision function generator producing accurate, high-frequency triangle, sawtooth, sine, square, and pulse waveforms with a minimum of external components. The output frequency
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MAX038
MC145151
MX7541
12-bit
MAX412
50mF
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4N50
Abstract: POWER MOSFET 4n45 IXTP4N45 4N45 IXTM4N45 IXTM4N50 IXTP4N50
Text: I X Y S CORP iflE D • 4böbESb OOOGblS 2 ■ \ IX T P 4 N 4 5 , IX T P 4 N 5 0 , IX T M 4 N 4 5 , IX T M 4 N 5 0 4 A M P S , 450-500 V, 1.5Q/2.0S2 □ IX Y S MAXIMUM RATINGS Parameter Sym. IXTP4N45 IXTM4N45 IXTP4N50 IXTM4N50 Unit Drain-Source Voltage 1
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1XTP4N45,
IXTP4N50,
IXTM4N45,
IXTM4N50
IXTP4N45
IXTM4N45
IXTP4N50
O-220
00A/ns
4N50
POWER MOSFET 4n45
4N45
IXTM4N45
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