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    250MJ Price and Stock

    Vishay Intertechnologies CRHV1206AF250MJLTB

    CRHV1206AF 250M 5% 150 TB - Bulk (Alt: CRHV1206AF250MJLTB)
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    Avnet Americas CRHV1206AF250MJLTB Bulk 18 Weeks 250
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    Vishay Intertechnologies RNX050250MJNLB

    RNX Series High Voltage Special Purpose Metal Oxide Resistor 1/2 Size 250M Ohm ±5% 1.2W ±200 ppm/°C 2-Pin Axial Leaded Lacer Pack - Bulk (Alt: RNX050250MJNLB)
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    Newark RNX050250MJNLB Bulk 100
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    Vishay Intertechnologies CRHV1206AF250MJLTT

    CRHV1206AF 250M 5% 150 TT - Bulk (Alt: CRHV1206AF250MJLTT)
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    Avnet Americas CRHV1206AF250MJLTT Bulk 18 Weeks 250
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    Vishay Intertechnologies RNX050250MJNR6

    RNX Series High Voltage Special Purpose Metal Oxide Resistor 1/2 Size 250M Ohm ±5% 1.2W ±200 ppm/°C 2-Pin Axial Leaded T/R - Tape and Reel (Alt: RNX050250MJNR6)
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    Avnet Americas RNX050250MJNR6 Reel 1,000
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    Newark RNX050250MJNR6 Bulk 1,000
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    Vishay Intertechnologies RNX050250MJNR7

    RNX Series High Voltage Special Purpose Metal Oxide Resistor 1/2 Size 250M Ohm ±5% 1.2W ±200 ppm/°C 2-Pin Axial Leaded T/R - Tape and Reel (Alt: RNX050250MJNR7)
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    Avnet Americas RNX050250MJNR7 Reel 1,500
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    Newark RNX050250MJNR7 Bulk 1,500
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    Find more 250MJ price and stock on Findchips.com

    250MJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ISL9V2540S3ST EcoSPARK N-Channel Ignition IGBT 250mJ, 400V Features General Description  SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended


    Original     		PDF ISL9V2540S3ST 250mJ, 250mJ ISL9V2540S3ST O-263)

    IGBT DRIVER ignition coil automotive

    Abstract: igbt ignition automotive ignition coil on plug automotive ignition ignition coil IGBT advance ignition automotive ignition coil ignition driver ignition switch on coil smart igbt ignition coil
    Text: ISL9V2540S3ST EcoSPARKTM N-Channel Ignition IGBT 250mJ, 400V Features General Description ! SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended


    Original     		PDF ISL9V2540S3ST 250mJ, 250mJ ISL9V2540S3ST O-263) IGBT DRIVER ignition coil automotive igbt ignition automotive ignition coil on plug automotive ignition ignition coil IGBT advance ignition automotive ignition coil ignition driver ignition switch on coil smart igbt ignition coil

    2SK2960

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 250mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 55ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm


    Original     		PDF 2SK2960 250mJ O-220E 2SK2960

    IGBT DRIVER ignition coil automotive

    Abstract: V2540S igbt spice automotive ignition automotive ignition coil ignition igbt ISL9V2540S3S ISL9V2540S3ST advance ignition igbt ignition
    Text: ISL9V2540S3S EcoSPARKTM N-Channel Ignition IGBT 250mJ, 400V General Description Features o ! SCIS Energy = 250mJ at TJ = 25 C ! Logic Level Gate Drive Applications ! Automotive Ignition Coil Driver Circuits ! Coil - On Plug Applications Package The ISL9V2540S3S is a next generation ignition IGBT that


    Original     		PDF ISL9V2540S3S 250mJ, 250mJ ISL9V2540S3S O-263) IGBT DRIVER ignition coil automotive V2540S igbt spice automotive ignition automotive ignition coil ignition igbt ISL9V2540S3ST advance ignition igbt ignition

    V2540S

    Abstract: IGBT DRIVER ignition coil automotive 5482E automotive ignition coil ISL9V2540S3S ISL9V2540S3ST igbt spice ignition spice smart ignition igbt
    Text: ISL9V2540S3ST EcoSPARK N-Channel Ignition IGBT 250mJ, 400V Features General Description ! SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended


    Original     		PDF ISL9V2540S3ST 250mJ, 250mJ ISL9V2540S3ST O-263) V2540S IGBT DRIVER ignition coil automotive 5482E automotive ignition coil ISL9V2540S3S igbt spice ignition spice smart ignition igbt

    2SK2960

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 250mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 55ns ● No secondary breakdown unit: mm 4.6±0.2 +0.5 13.7–0.2 ● Contactless relay


    Original     		PDF 2SK2960 250mJ O-220E 2SK2960

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 250mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 55ns ● No secondary breakdown unit: mm 4.6±0.2 15.0±0.3 ■ Applications


    Original     		PDF 2SK2960 250mJ

    MP-25

    Abstract: NP82N06CLC NP82N06DLC NP82N06ELC
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    30v 28a mosfet

    Abstract: 2N7218U IRF140SMD IRFN140
    Text: IRFN140 2N7218U SEME LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


    Original     		PDF IRFN140 2N7218U 300ms, 30v 28a mosfet 2N7218U IRF140SMD IRFN140

    transistor 5586

    Abstract: IRFN3710
    Text: IRFN3710 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


    Original     		PDF IRFN3710 transistor 5586 IRFN3710

    2N7218

    Abstract: IRFM140 LE17
    Text: N-CHANNEL POWER MOSFET IRFM140 / 2N7218 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF IRFM140 2N7218 250mJ O-254AA 2N7218 LE17

    Untitled

    Abstract: No abstract text available
    Text: IRFN3710 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6


    Original     		PDF IRFN3710

    VHF50HN

    Abstract: is-50nx-c2 capacitor 10nj IS-B50LN-C2 IS-MR50LNZ 15 IS-50NX-C1 IS-B50LN-C1 wireless walkie talkie circuit IS-VU50HN IS-CT50HN
    Text: G L O B A L L I G H T N I N G S O L U T I O N S PolyPhaser Corporation Product Catalog PRODUCT CATALOG ac Power Protectors dc Power Protectors Grounding Solutions Protected Bias-T dc Blocked Filters Combiner Protectors dc Blocked Single Transmitter Twisted Pair Cable Protectors


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF140 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)


    Original     		PDF IRF140 300ms,

    Untitled

    Abstract: No abstract text available
    Text: SEME IRFN140SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


    Original     		PDF IRFN140SMD IRFN140" IRFN140SMD IRFN140SMD-JQR-B O276AB) 1660pF 145nC 145nC

    Untitled

    Abstract: No abstract text available
    Text: S EM E IRF140SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


    Original     		PDF IRF140SMD 00A/ms 300ms,

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFM140 / 2N7218 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF IRFM140 2N7218 250mJ O-254AA

    IRF140SM

    Abstract: No abstract text available
    Text: SEME IRF140SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 100V 13.9A 0.077W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF


    Original     		PDF IRF140SM 220SM 00A/ms 300ms, IRF140SM

    Untitled

    Abstract: No abstract text available
    Text: S EM E IRFN140SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )


    Original     		PDF IRFN140SMD 00A/ms 300ms,

    C11371

    Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
    Text: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub­ sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: im SEM E IRF140 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 100 V V DSS 28A ID(cont) 0.077Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ 18.80 (0.740) ^ dia. ! • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE


    OCR Scan     		PDF IRF140 300ms,

    Untitled

    Abstract: No abstract text available
    Text: Illl W . mi SEME IRFN140 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 11.5 100 V 13.9A 0.077Q V DSS 0.25 I D(cont) 3.0 ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.


    OCR Scan     		PDF IRFN140 O-220SM 250mJ

    Untitled

    Abstract: No abstract text available
    Text: im s ffs n il IRFN140 SEME LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11 s 100 V V Dss 0.25 13.9A ^D(cont) 3.0 r*-H 0 .077G R DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.


    OCR Scan     		PDF IRFN140 O-220SM 300ms,

    Untitled

    Abstract: No abstract text available
    Text: im i ^ i mi IRF140SM SEME LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 100V 13.9A 0.07712 V DSS 0.25 I D(cont) 3.0 ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.


    OCR Scan     		PDF IRF140SM T0-220SM 300ms, S1331S7