DM7448A
Abstract: DM7448 dm7447 DM7447 N DM5446AJ DM5446AN DM5446AW DM5447AJ DM7446AJ DM7446AN
Text: DM 5446A/DM 7446A, Display Drivers KIS DM 5446A/DM 7446A D M 5447A / D M 7 4 4 7 A DM 5448/DM 7448 B C D -to -7 -se g m en t decoder/drivers general description leakage cu rre n t o f 250juA . Since its o u tp u t co n fig u fu lfills a w ide variety o f requirem ents fo r most
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DM5446A/DM7446A
DM5447A/DM7447A
DM5448/DM7448
DM5447A/DM7447A
DM5448/DM7448
DMS446A/0
M5447A
DM7448A/D
DM7448A
DM7448
dm7447
DM7447 N
DM5446AJ
DM5446AN
DM5446AW
DM5447AJ
DM7446AJ
DM7446AN
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ulm 2003
Abstract: ulm 2004 ULN2003 current buffer ULN2003 PIN configuration uln2003 buffer ULN2003N ULN2003 equivalent ULN2003 ULN2003 ac ULN2004N
Text: ULN2003/04 Signetics High V o lta g e /H ig h Current Darlington Transistor Arrays Product Specification L in e a r P r o d u c t s D E S C R IP T IO N These high voltage, high current Darling ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a
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ULN2003/04
600mA
ULN2003
ULN2004
ULN2004
ULN2003
ulm 2003
ulm 2004
ULN2003 current buffer
ULN2003 PIN configuration
uln2003 buffer
ULN2003N
ULN2003 equivalent
ULN2003 ac
ULN2004N
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CLAREX
Abstract: Vactec optocoupler 118MFRTD BLH ELECTRONICS CALIBRATION TF5SX17ZZ VTL5C10 50hz wien oscillator VTL5C1 Wheatstone Bridge amplifier Sage Laboratories Phase Shifters
Text: rrun^Aß J Ê k tm F Application Note 43 TECHNOLOGY June 1990 Bridge Circuits Marrying Gain and Balance Jim Williams Bridge circuits are among the most elemental and powerful electrical tools. They are found in measurement, switching, oscillator and transducer circuits. Additionally, bridge tech
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AN43-47
61/TPuT
AN43-48
CLAREX
Vactec optocoupler
118MFRTD
BLH ELECTRONICS CALIBRATION
TF5SX17ZZ
VTL5C10
50hz wien oscillator
VTL5C1
Wheatstone Bridge amplifier
Sage Laboratories Phase Shifters
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IRFIZ44
Abstract: IRFIZ40 IRFWZ40 IRFWZ44 LS50A
Text: N-CHANNEL POWER MOSFETS IRFWZ44/40 IRFIZ44/40 FEATURES • • • • • • • D!-PAK Lower R d sio n Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFWZ44/40
IRFIZ44/40
IRFWZ44/IZ44
IRFWZ40/IZ40
IRFWZ44
IRFIZ44
IRFWZ40
IRFIZ40
LS50A
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Untitled
Abstract: No abstract text available
Text: 5V, 1A Linear Regulator with RESET and ENABLE Description The CS-8121 is a 5V, 1A precision linear regulator with two microprocessor compatible control functions and pro tection circuitry included on chip. The composite NPN-PNP output pass tran sistor assures a lower dropout voltage
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CS-8121
T0-220
CS-8121T5
CS-8121TV5
CS-8121TH5
CS-8121TF5
CS-8121DP7
CS-8121DPR7
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D0233
Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC
Text: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFS340/341
IRFS340
IRFS341
71b4142
2ti35ti
D0233
250JUA
250M
Tj-25DC
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TOWA Electrolytic capacitor
Abstract: smd JSs smd JSs 13 ttf 103 english CS-8141DW24 CS-8140DW24 CS-8140T7 CS-8140THA7 CS-8140TV7 104 100 ncc capacitor
Text: CS-8140/1 C S -8 1 4 0 /1 5V, 500mA Linear Regulator with ENABLE, RESET, and Watchdog Description The CS-8140 is a 5V W atchdog R egulator w ith p ro tectio n circuitry a n d three logic control functions th a t allow a m icroprocessor to control its o w n
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500mA
CS-8140
500mA)
inWR24
CS-8140N14
CS-8141T7
T0-220
CS-8141TV7
TOWA Electrolytic capacitor
smd JSs
smd JSs 13
ttf 103 english
CS-8141DW24
CS-8140DW24
CS-8140T7
CS-8140THA7
CS-8140TV7
104 100 ncc capacitor
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Untitled
Abstract: No abstract text available
Text: M OSFET J 'ì * ? • Wfé\f->£IH 7 x>/\> .*>bg> Power MOSFET N-Channel, Enhancem ent ty p e O U T L I N E D IM E N S IO N S 2SK1195 230V 1.5A ■ R A T IN G S A b s o lu te M axim um R a tin g s m s Ite m te Ife \ar Conditions y- Symbol « ÏF S JE S to ra g e T e m p e ra tu re
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2SK1195
--10V,
--67i2
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rc4200 raytheon
Abstract: rc4200 rm4200 analog multipliers
Text: RC4200 RAYTHEON/ HE D I • 75^73^0 G Ü D tm S 3 | ■ Special Functions S EM IC O N D U C T O R T ~ ? 3 ' ^ ^ RC4200 Analog Multiplier over the full temperature range. This nonlinearity compensation combined with the low gain and offset drift inherent in a well designed
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RC4200
250juA)
10siruut
173tjG
rc4200 raytheon
rc4200
rm4200 analog multipliers
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DC3000L
Abstract: real clock timer switch m08e 24-HOUR push pull lcd
Text: MODULE DIMENSIONS DIMENSIONS IN MM * CHARACTER HEIGHT-12.00m m 0 .4 7 2 in ch TRIMMER FOR ACCURACY ADJUSTMENT (PRESET) 6 0 .0 0 ± 0 .2 0 I 1,60±0.1 0 6 .5 0 ± 0 .2 0 FRO N T V IEW FEATURES • 1 2 / 2 4 h o u r LCD clock m o d ule s • Hour, m in u te and second
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HEIGHT-12
472inch)
DC3000L
real clock timer switch
m08e
24-HOUR
push pull lcd
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MM4220DF/MM5220DF
Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Text: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.
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360746lat
MM4220DF/MM5220DF
mm5221
MM4240
DS8807
MM5017
54S287
MM1402a equivalent
transistor bf 175
MM74C920
MM5061
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2N5401S
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V cbo=-160V, V CEo=-150V •3 MAXIMUM RATINGS Ta=25°C RATING UNIT Collector-Base Voltage
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2N5401S
-160V,
-150V
-50mA,
-10j/A,
-10mA
-50mA
-10mA,
2N5401S
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Untitled
Abstract: No abstract text available
Text: V 6915 DUAL Two Channel Level Shifter with High Noise Immunity Features • DUAL two bit wide with 2 separated OE pin for bus capability ■ Schmitt Trigger on the inputs ■ High noise immunity ■ 4 separated Input / Output Power Supplies ■ Fully operational from 1.5 V to 10 V
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DIP16
V6915
DIP16
6915nn
B/121
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rt 8120 d
Abstract: RT 8120 rt 8120 a
Text: 5V, 300mA Linear Regulator with RESET and ENABLE Description The CS-8120 is a 5V, 300mA precision linear regulator with two microproces sor compatible control functions and protection circuitry included on chip. The composite NPN-PNP output pass transistor assures a lower dropout volt
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300mA
CS-8120
200mA)
CS-8120T5
CS-8120TV5
CS-8120TH5
CS-8120N8
CS-8120DP5
rt 8120 d
RT 8120
rt 8120 a
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sef730
Abstract: 8a22a
Text: S G S-THOMSON Û7E D g 7^2^237 . 0 7 » 3<%- 1 J 7 3 C .1 7 5 4 2 a u HIGH SP EED SW IT C H IN G A P P L IC A T IO N S A B SO L U T E M A X IM U M R A T IN G S V qs ^DGR V qs •d m ! * P,o, ^stg T| Drain-source voltage VGS = 0) Drain-gate voltage (RGS = 2 0 K O )
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SEF730
SEF731
SEF732
SEF733
300/is,
C-267
8a22a
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transistor TT 2146
Abstract: equivalent for transistor tt 2146 equivalent of transistor tt 2146 ht 2810 TT 2146 sanyo fm front end ta 31272 fn csc 2315 stm stt 128 acrx
Text: Ordering number: EN3127 _ C MOS LSI N °3127 I_LC5805 I SINGLE-CHIP 4-BIT MICROCOMPUTER yiyrhLco d r i v e r The LC5805 is a C-MOS 4-bit microcomputer that operates on low voltage, very low current and contains LED drivers.
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EN3127
LC5805
LC5805
LC5805F/5899F)
LC5805G/5899G)
transistor TT 2146
equivalent for transistor tt 2146
equivalent of transistor tt 2146
ht 2810
TT 2146
sanyo fm front end
ta 31272 fn
csc 2315
stm stt 128
acrx
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1RF9520
Abstract: diode S68a 68A diode IRF9520S UI5 321 IRF9520 ScansUX102 d68a SMD MARKING "68A"
Text: P D -9.319G International ire 1Rectifier IRF9520 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S -
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IRF9520
-100V
O-220
T0-220
1RF9520S
1RF9520
diode S68a
68A diode
IRF9520S
UI5 321
ScansUX102
d68a
SMD MARKING "68A"
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2N5401C
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KEC KOREA ELECTRONICS CO.,LTD. 2N5401C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V Cbo=-160V , V Ceo = -150V • Low Leakage Current.
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2N5401C
-160V,
-150V
-50nA
-120V
-50mA,
-10J/A,
-10mA
-50mA
-10mA,
2N5401C
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PDF
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SSD2009
Abstract: TP150 2TS01
Text: DUAL N-CHANNEL POWER MOSFETS SSD2009 FEATURES • • • • • • • 8SO IC Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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SSD2009
SSD2009
TP150
2TS01
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SL651B
Abstract: No abstract text available
Text: SL650/SL651B/C Ä FLESSE Y W Sem iconductors. SL650B&C SL651B&C MODULATOR/PHASE LOCKED LOOP CIRCUITS FOR MODEMS T h e S L 6 5 0 /1 are v e rs a tile in te g ra te d c irc u its capa ble o f p e rfo rm in g PAM, all th e SCAM , c o m m o n m o d u la tio n fu n c tio n s A M ,
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SL650/SL651B/C
SL650B
SL651B
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Untitled
Abstract: No abstract text available
Text: _LT1352/LT1353 r r u n m TECHNOLOGY Dual and Q uad 250nA, 3MHz, 200V/jas O perational Amplifiers K R T U IK S D C S C R IP T IO n • 3MHz Gain Bandwidth ■ 200V/ijs Slew Rate ■ 250|jA Supply Current per Amplifier The LT 1352/LT1353 are dual and quad, very low power,
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LT1352/LT1353
250nA,
00V/jas
1352/LT1353
LT1352/LT1353
LT1351
LT1354/55/56
250juA,
12MHz,
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614L
Abstract: step down Voltage Regulator 230 volt to 150 volt
Text: 5V, 300mA Linear Regulator with RESET and ENABLE D escription The CS-8120 is a 5V, 300mA precision linear regulator with two microproces sor compatible control functions and protection circuitry included on chip. The composite NPN-PNP output pass transistor assures a lower dropout volt
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300mA
CS-8120
150mA)
CS-8120T5
CS-8120TV5
CS-8120TH5
CS-8120N8
CS-8120D14
614L
step down Voltage Regulator 230 volt to 150 volt
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PDF
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550MH
Abstract: IGT6D10 IGT6E10
Text: Preliminary 26.4 4/85 IGT6D10,E10 c a r ' T R M u s T O i i 10 AMPERES 400,500 VOLTS EQUIV. FId S ON = 0.27 Í1 Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device
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S8251
Abstract: 82S11 56267R signetics 82S1 82S10 82S111 N82S10 A4T10 N82S11F
Text: Signetics Memories - Bipolar Ram N82S10, N82S110, 82S11, 82S111 — 1024 Bit Bipolar Ram C O N N E C TIO N D IA G R A M G E N E R A L D E SC R IPTIO N The 8 2 S 1 0 /1 1, w ith a typ ic a l access tim e o f 30ns, is ideal fo r cache b u ffe r app lica tions and fo r systems requiring very
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N82S10,
N82S110,
82S11,
82S111
82S10/11,
82S10/11
N82S10/110/11/111.
82S10
82S11
S8251
56267R
signetics 82S1
N82S10
A4T10
N82S11F
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