Untitled
Abstract: No abstract text available
Text: Off-Line and DC/DC Converter Products LT1241-LT1247 Series Key Features TOP VIEW Low Start-Up Current <250jjA 50ns Current Sense Delay Current-Mode Operation to 1MHz 3 V REF 3 VCC 6 ] OUTPUT Current Sense Leading Edge Blanking 3 Pin Compatible with UC1842/UC3842 Series
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LT1241-LT1247
250jjA)
UC1842/UC3842
LT1841
LT1241
LT1242
LT1243
LT1244
LT1245
LT1246
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30kH
Abstract: No abstract text available
Text: UÎ\WL New Products TECHNOLOGY New Products LT1351 250jiA, 3 MHz, 200V/|as O p e ra tio n a l Am plifier F€RTUA€S DCSCftlPTIOn Gain Bandwidth: 3MHz Slew Rate: 2Q0V/jjs Supply Current: 250jjA The LT 1351 is a low power, high speed, high slew rate operational
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LT1351
250jiA,
250jjA
600jxV
700ns
1250ns
LT1351CN8
LT1351C
30kH
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Untitled
Abstract: No abstract text available
Text: um TECHNOLOGY LTC1451 LTC 1452/ LTC 1453 12-Bit Rcril-to-Rail M icropow er DACs in SO-8 F6RTURCS D€SCRIPTIOn • 12-Bit Resolution ■ Buffered True Rail-to-Rail Voltage Output ■ 3V Operation LTC1453 , Icc- 250jjA Typ ■ 5V Operation (LTC1451), Icc: 400nATyp
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LTC1451
12-Bit
LTC1453)
250jjA
LTC1451)
400nATyp
LTC1452)
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Untitled
Abstract: No abstract text available
Text: _LT1352/LT1353 Dual and Q uad 250jjA 3MH z, 200V/fis O p eratio nal Am plifiers D€SCMPTIOn FCflTURCS • 3MHz Gain Bandwidth ■ 200V/ns Slew Rate ■ 250|aA Supply Current per Amplifier ■ C-Load Op Amp Drives All Capacitive Loads ■ Unity-Gain Stable
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LT1352/LT1353
250jjA
00V/fis
00V/ns
14nV/Vflz
700ns
152mm)
254mm)
16-Lead
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2SK1118
Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531
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2SK1529
2SK1530
2SK357
2SK358
2SK525
2SK526
2SK532
2SK387
2SK572
2SK578
2SK1118
2SK1513
TO-3P
2SK1723
2SK790
p-channel fet to-220
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OSS 200
Abstract: I 508 V 11-PIN OM6423SP6 OM6424SP6 OM6425SP6 OM6426SP6 250-1000mA
Text: Preliminary Data Sheet OM6423SP6 OM6424SP6 OM6425SP6 OM6426SP6 POWER MOSFETS IN 11-PIN INDUSTRIAL SIP PACKAGE Industrial 11-Pin, 150 to 500 V, N-Channel Power MOSFET, Full “H” Bridge FEATURES • • • • Low RDS on Fast Switching Single SIP Package
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OM6423SP6
OM6425SP6
OM6424SP6
OM6426SP6
11-PIN
11-Pin,
534-5776FAX
OSS 200
I 508 V
OM6426SP6
250-1000mA
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mmp 685 j
Abstract: rtl 8111 LC5734 LC5734H 2 pin crystal oscillator 20mhZ XL1 cf 455 e EN264 LC5797
Text: Ordering number : EN2642A CM OS LSI No. 2642A SANYO I i _LC5734, 5734H SINGLE-CHIP 4-BIT MICROCOMPUTER W ITH LCD DR IV E R S FOR LOW -VOLTAGE, LOW-OWER USE General Description The LC5734/5734H are single-chip 4-bit microcomputers w ith LCD drivers. The features of the LC5734/5734H include
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EN2642A
LC5734,
5734H
LC5734/5734H
128x4
LC5734
mmp 685 j
rtl 8111
LC5734H
2 pin crystal oscillator 20mhZ XL1
cf 455 e
EN264
LC5797
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sk313
Abstract: BT 1840 PA cf 455 D403 A LC5734 LC5734H EVA-51 sanyo opu
Text: O rd erin g n u m b e r : E N 2642A CMOS LSI F SAKYO LC5734, 5734H No. 2642A SINGLE-CHIP 4-BIT MICROCOMPUTER W ITH LCD DR IV E R S FOR LOW -VOLTAGE, LOW-OWER USE i 7 7 " • '/ General Description , , The LC5734/5734H are single-chip 4-bit microcomputers w ith LCD drivers. The features of|pM&i.C573%/5734H include
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LC5734,
5734H
LC5734/5734H
/5734B
UC5734/5734rtiar
2048x8
128x4
LC5734
455kHz
sk313
BT 1840 PA
cf 455
D403 A
LC5734H
EVA-51
sanyo opu
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Untitled
Abstract: No abstract text available
Text: w è m h e l: IN N O V A T IO N a n d E X C E L L E N C E Single Output Ruggedized, 2" x 2" 16-20 Watt, DC/DC Converters DATEL!s XHR Series DC/DC converters deliver a measure of cost-effective long-term reliability not previously available in commercial, off-the-shelf power
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100ppm/Â
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10PH
Abstract: C685 DDBG473 IRGPC40U
Text: PD - 9.684A International m i Rectifier IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGPC40U
O-247AC
SSM52
G02GM7b
10PH
C685
DDBG473
IRGPC40U
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Untitled
Abstract: No abstract text available
Text: P D - 9 .1 2 6 5 G International IO R Rectifier IRF7501 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel M O S F E T Very Small S O IC Package Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching
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Untitled
Abstract: No abstract text available
Text: 3 0E J • 7*iBïi 2 3 7 _ 0 D 2 ^ b _ ' l S C S -T H O M S O N M m 'f .'Z P i - W s 6 s- TH0?si N _ i Lll(g¥IS IRDO(gi SG SP330 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^ D S (o n ) SGSP330 450 V 3n Id 3A • HIGH SPEED SWITCHING APPLICATIONS
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SP330
SGSP330
100KHZ
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Untitled
Abstract: No abstract text available
Text: APT30M85BVFR A dvanced P ow er T e c h n o lo g y 9 300V POWER MOSV 40A 0.085Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT30M85BVFR
O-247
APT30M85BVFR
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vdgr test circuit
Abstract: MOSFET 2301 oss 200-20 vdr 275 DE-275
Text: - ^ ' • » n ^ c - r ' T n r n r r n c m c p T î v i m p / . . . Q 7 n f i n n O T r , ÎTliTafl^ ^ s D IR EC TE! ENERGY INC t - i ~ _ » Q0ÜDÜ27 =■ DE-275 SERIES □ DATA ante i DIRECTED ENERGY, IN C -, > ■ ^ DE-275 20IP11
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DE-275
20IP11
vdgr test circuit
MOSFET 2301
oss 200-20
vdr 275
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diode fr
Abstract: IRF620A
Text: IRF620A Advanced Power MOSFET FEATURES = 200 V ^DS on = 0 .8 £2 B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A (M ax.) @ VDS= 200V
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IRF620A
O-220
diode fr
IRF620A
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ssh70n10a
Abstract: No abstract text available
Text: SSH70N10A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gale Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175t: Operating Temperature ■ ■ BVdss * 100 V ^DS on “
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SSH70N10A
ssh70n10a
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c125t
Abstract: IRF630A 2u 57 diode
Text: IRF630A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 p A Max. @ VDS= 200V - ^DS(on) =
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IRF630A
O-220
IRF63
c125t
IRF630A
2u 57 diode
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bm311
Abstract: No abstract text available
Text: SSR/Ü4N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVjjss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 *iA M ax. @
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4N60A
SSR/U4N60A
bm311
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Untitled
Abstract: No abstract text available
Text: SSS2N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 p A Max. @ VDS= 600V
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SSS2N60A
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LM5A
Abstract: diode 50v 5A c125 diode SSP5N80A
Text: SSP5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ H BVdss = 800 V Avalanche Rugged Technology Rugged Qate Oxide Technology Lower Input Capacitance improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 m A Max. @ VD8 = 800V
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SSP5N80A
LM5A
diode 50v 5A
c125 diode
SSP5N80A
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136q
Abstract: No abstract text available
Text: SSH5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ - 800V ^DS on = 2.2 Q BVDss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA(M ax.) @
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SSH5N80A
136q
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Untitled
Abstract: No abstract text available
Text: IRFS540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVoss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1 7 5 t Operating Temperature Lower Leakage Current : tO |iA M a x. @ VDS= 100V
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IRFS540A
IRFS54DA
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SECI resistor
Abstract: resistor seci
Text: Advanced Power MOSFET IR F P 1 4 0 A FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175t: Operating Temperature ■ Lower Leakage Current : 10 p A Max. @
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IRFP140A
SECI resistor
resistor seci
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Untitled
Abstract: No abstract text available
Text: SSH17N60A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 MA Max. @ VDS= 600V Lower RDS{ON) : 0.356 £2 (Typ.) ^DS(on) = 0 .4 5 O
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SSH17N60A
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