Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. S S F —LXH M 250IID C REV. A B E.C.N. NUMBER AND REVISION COMMENTS C E.C.N. # 1 0 5 0 0 & # 10BR D R . & REDRAWN. DATE E.C.N. # 1 0 3 0 5 . 2 -5 -9 7 E.C.N. # 1 0 3 3 3 . 4 -1 7 -9 7 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C
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X509F3ID,
SSH-LXHM250,
LXHM250IID
10BRDR.
635nm
94all
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Untitled
Abstract: No abstract text available
Text: Or, Call Custom ! Service al 1-800-548-6132 USA Only FEATURES APPLICATIONS • INCLUDES INTEGRATION CAPACITOR, RESET AND HOLD SWITCHES, AND OUTPUT MULTIPLEXER • CURRENT TO VOLTAGE CONVERSION • PHOTODIODE INTEGRATOR • CURRENT MEASUREMENT • LOW NOISE: 10nVrms
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10nVrms
120dB
ACF2101
ACF2101
DEM-ACF2101BP-C
AB-020
17313b5
0025M43
17313bS
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gruner RELAY
Abstract: D6450 T60403-L4097-X028-80 MT8931be gruner 740
Text: MITEL MT8931B Subscriber Network Interface Circuit CMOS ST-BUS FAMILY Preliminary Inform ation 9161-002-171-NA Features • • • • • • • • • • • • • • CCITT 1.430 and ANSI T1.605 S/T interface Full-duplex 2B + D , 192 kbit/s transmission
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MT8931B
9161-002-171-NA
MT8931BC
MT8931BE
MT8931BP
bE4T37D
gruner RELAY
D6450
T60403-L4097-X028-80
gruner 740
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Untitled
Abstract: No abstract text available
Text: • MITEL’ 1^24=1370 □ D 0 7 ci e 3 3TT ■ M I T C MT8931B Subscriber Network Interface Circuit IS02-C M 0S ST-BUS FAMILY Preliminary Inform ation ISSUE 1 9161-002-171-NA Features • • • • • • • • • • • • • • November 1992
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MT8931B
IS02-C
9161-002-171-NA
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cts 8321
Abstract: Matsushita mmi 50 Matsushita mmi 25 8321A I321 MA729 S-8321 S-8321A S-8322 Matsua mmi 50
Text: Contents Features . 1 Applications . 1 Block diagram . 1 Selection Guide . 2
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rm4200 analog multipliers
Abstract: OP 741 mini dip ic pin diagram of 741 op-amp sine wave square wave RC4200 OP-AMP ic 741 used as summing amplifier RM4200AD Voltage multiplier using 741 opamp 850196 ah7 transistor RM4200D
Text: Special Functions RC4200 RC4200 Analog Multiplier over the full tem perature range. This non linearity com pensation com bined w ith the low gain and offset d rift inherent in a well designed m onolithic chip provides a very low accuracy tem pco. The excellent linearity and versatility were
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RC4200
RC4200
5-01962A
250/xA)
250/iA)
rm4200 analog multipliers
OP 741 mini dip ic
pin diagram of 741 op-amp sine wave square wave
OP-AMP ic 741 used as summing amplifier
RM4200AD
Voltage multiplier using 741 opamp
850196
ah7 transistor
RM4200D
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Untitled
Abstract: No abstract text available
Text: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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RFL1N12,
RFL1N15
TA09196.
AN7254
AN7260.
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Untitled
Abstract: No abstract text available
Text: EL2074C élantec HIGH PERFORMANCE ANAtOG INTEGRATED CtRCtllTS EL2074C 4M MHz GBWP Gain-of-2 Stable Operational Amplifier F e a tu r e s G e n e r a l D e s c r ip t io n • 400 M H z gain-bandw idth product • Gain-of-2 stable • U ltra low video distortion =
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EL2074C
EL2074
800e--
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SFN106B9
Abstract: DS0026 IRFF121 3909
Text: b l D E^ f lf fl3bfifciD5 l3 t .a k 0 5 bl ‘ DE •SOLITRÔN DEVICES INC B o l i t r D E V I C E S , o n T I T | . s f n T T- 3 9 - 0 9 i o 6 B 9 IIM C . POWER MOS DEVICE 60V/6A N Channel, TO-39 Package, IRFF121 Equivalent The new Solitron Power MOS technology
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T-39-09
SFN106B9
IRFF121
HP214A
/IF/450V
SFN106B9
DS0026
3909
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HY5118164
Abstract: F1024
Text: • H Y UN DA I HYM572A224A R-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A224A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of two HY514404B in 20/26 pin SOJ or TSOP-II, four HY5118164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168 pin
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HYM572A224A
72-bit
HY514404B
HY5118164B
2048bit
HYM572A224ARG/ASLRG/ATRG/ASLTRG
DQ0-DQ71)
1EC06-10-APR95
HY5118164
F1024
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60P06E
Abstract: 6b69e RS111
Text: RFG60P06E m HARRIS S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancem ent-M ode Power MOSFET J a n u a ry 199 6 Features Package JEDEC STYLE TO-247 • 6 0 A ,6 0 V SOURCE • * *D S O N = 0 . 0 3 0 1 2 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M o d e l
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RFG60P06E
O-247
72e-3
43e-3
91e-7
98e-9
11e-1
34e-3
46e-12)
15e-10
60P06E
6b69e
RS111
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2766G
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS U PC 2766G R FUNCTIONAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION RF & LO DC to 1 GHz IF IQ DC to 100 MHz • WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: ±0.3 dB Typical
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2766G
UPC2766GR
UPC2766GR-E1
2500/Reel
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transistor j3003
Abstract: svi 1302 9316V ESB 24-40
Text: Contents Features. Applications. Block Diagram. Selection Guide.
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S-8324/8328
transistor j3003
svi 1302
9316V
ESB 24-40
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SSF-LXH250IID
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT REV. PART NUMBER REV. S S F —L X H 2 5 0 IID D E .C .N . NUM BER AND A CHG 'D LEAD B UPDATED SAFE C UPDATED D E .C .N . # 1 0 4 -9 6 , & REVISION COMMENTS 1 0 -2 1 -9 3 El PER. SPECS. 1 2 -2 0 -9 4 DIMS. 5 -2 3 -9 5 #10BRDR & ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C
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SSH-LXH25G,
LXH250IID
10BRDR
100jjA
635nm
94ALL
SSF-LXH250IID
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SFN321
Abstract: T-39 D0238 5M6-24UNF-2A TO228 T0190
Text: 8368602 SOLITRON DEVICES SFN321 INC 70C 02060 0 / T-39-11 N SWITCH MOS PACKAGE TO-3 POWER MOS MAXIMUM RATINGS SYMBOL • VDS *D 350 Drain Current, Continuous @ Tc«25°C 3.0 A 12 A 1+ to o V Power Dissipation @ Tc»25°C 40 W Drain Current, Clamped Inductive
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T-39-11
SFN321
250iiA
1J4-28UNF-ZA
5M6-24UNF-2A
050-MAX.
T-39
D0238
5M6-24UNF-2A
TO228
T0190
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ic abaj
Abstract: mark EA SOT23-5 Nippon capacitors MAX4333
Text: A I/J X IA I 19-1192; Rev 1 ;4 /9 7 S i n g l e / Du a l / Q u a d , L o w - P o w e r , Si ng l e- Suppl y, R a i l - t o - Ra i l I/O Op A m p s w i t h S h u t d o w n The M AX4330-MAX4334 single/dual/quad op amps combine a wide 3MHz bandwidth, low-power operation,
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AX4330-MAX4334
245pA
250mV
MAX4331/
MAX4333
ic abaj
mark EA SOT23-5
Nippon capacitors
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EM- 546 motor
Abstract: G3N60C
Text: HGTD3N60C3, HGTD3N60C3S HARRIS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBTs June 1997 Features Description • 6A, 600V at Tc = 25°C The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of
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HGTD3N60C3,
HGTD3N60C3S
HGTD3N60C3
HGTD3N60C3S
TA49113.
1-800-4-HARR
EM- 546 motor
G3N60C
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Untitled
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE TT-MOSn YTF643 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. DRIVE APPLICATIONS. # 3 .6 ± 0 .2 ' . Low Drain-Source ON
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YTF643
250iiA
20kil)
10Vj--
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7660S
Abstract: TC7660SCOA
Text: ~ Semiconductor, Inc. TC7660S SUPER CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC7660S is a pin-compatible upgrade to the Indus try standard TC7660 charge pump voltage converter. It converts a +1.5V to +12V input to a corresponding -1,5V to
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TC7660S
10kHz
45kHz
TC7660S
TC7660
7660S
TC7660SCOA
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3B149
Abstract: No abstract text available
Text: SSI 32R2532R ¿ m m M tm +5V, 8-Channel Thin Film Read/Write Device * A TDK Group/Company Advance Information January 1996 DESCRIPTION FEATURES The SSI 32R2532R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write
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32R2532R
32R2532R
250ft
3B-157
3B149
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Fluke a55
Abstract: No abstract text available
Text: i T u TECHNOLOGY nm wideband RMS-DC Converter Building Block F€ A T U R € S D C S C R IP TIO fl • 300MHz 3dB Bandwidth The LT1088 is a thermally based R M S -D C converter build ■ 1 % Accuracy D C -5 0 M H Z ing block. It converts the input waveform to heat. Using ex
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300MHz
LT1088
14-Lead
Fluke a55
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CXA1372s
Abstract: No abstract text available
Text: CXA1372Q/S SONY RF Signal Processing Servo Am plifier for CD Player Description The CXA1372 is a bipolar IC developed for RF signal processing focus OK, mirror, defect detection, EFM comparator and servo control. 48pin QFP (Plastic) Features • Single power supply, 5V
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CXA1372Q/S
CXA1372
48pin
CXD2500
XA1182
CXA1372Q
CXA1372s
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A 933 S transistors
Abstract: qe 644 3-12 Volt dc motor HGTD10N50F1S
Text: rn H A R R IS 00 sem iconductor HGTD10N40F1, HGTD10N40F1S HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA TOP VIEW • 10 Amp, 400 and 500 Volt • Vce on 2.5V Max. • t fall
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HGTD10N40F1,
HGTD10N40F1S
HGTD10N50F1,
HGTD10N50F1S
HGTD10N50F1
O-251AA
HGTD10N40F1S,
HGTD10N50F1S
O-252AA
A 933 S transistors
qe 644
3-12 Volt dc motor
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TNY 176 PN EQUIVALENT
Abstract: AY-5-8100 TFK 7 segment displays AY5-8100 7-segment display tfk FTC S211 TNY 177 PN EQUIVALENT saa1130 TNY 176 PN AY-3-8500
Text: 1977 DATA CATALOG f m ELECTRONICS G E N E R A L I N S T R U M E N T C O R P O R A T I O N » M IC R O E L E C T R O N I C S r I' i i INDEX/GENERAL INFORMATION. CALCULATORS. CLOCKS.
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