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    250 VOLT 100 AMP NPN TRANSISTOR Search Results

    250 VOLT 100 AMP NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    250 VOLT 100 AMP NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


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    BDW42G

    Abstract: 30VDC BDW42 BDW46 BDW46G BDW47 BDW47G
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


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    BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D 30VDC BDW42 BDW46 BDW46G BDW47 PDF

    BDW42G

    Abstract: BDW46G BDW47G BDW42 BDW46 BDW47 250 volt 100 amp npn transistor
    Text: BDW42 - NPN, BDW46, BDW47 - PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.


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    BDW42 BDW46, BDW47 BDW46 BDW42/BDW47 O-220AB BDW42/D BDW42G BDW46G BDW47G BDW46 250 volt 100 amp npn transistor PDF

    BDW47

    Abstract: BDW42 BDW42G BDW46 BDW46G BDW47G pnp high emitter base voltage 15 volt
    Text: BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.


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    BDW42 BDW46, BDW47 BDW46 BDW42/BDW47 O-220AB BDW42/D BDW42G BDW46 BDW46G BDW47G pnp high emitter base voltage 15 volt PDF

    TO-220AB transistor package

    Abstract: bdw42G
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


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    BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D TO-220AB transistor package PDF

    Untitled

    Abstract: No abstract text available
    Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.


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    BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 220AB BDW42/D PDF

    BDW42G

    Abstract: BDW46G BDW42 BDW46 BDW47 BDW47G
    Text: BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.


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    BDW42 BDW46, BDW47 BDW46 BDW42/BDW47 O-220AB BDW42/D BDW42G BDW46G BDW46 BDW47G PDF

    Untitled

    Abstract: No abstract text available
    Text: BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.


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    BDW42 BDW46, BDW47 BDW42 BDW47 BDW46 BDW42/BDW47 220AB BDW42/D PDF

    transistor NPN 30 watt

    Abstract: transistor Ic 1A NPN FHFCX491 npn transistor 60 volt 5v power transistor 60V transistor npn 1a TRANSISTOR NPN 60V Collector 5v npn TRANSISTOR
    Text: NPN ᒦ৖ൈहࡍྯ૵਌ NPN Medium Power Transistor NPN Medium Power Transistor DESCRIPTION & FEATURES 60 Volt VCEO 1A Amp continuous current FHFCX491 NPN ᒦ৖ൈहࡍྯ૵਌ 概述及特點 SOT-89 Ptot =1 Watt PIN ASSIGNMENT 引腳說明 PIN NAME


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    FHFCX491 OT-89 OT-89 FHFCX491 500mA 100mA 100mA 100MHZ transistor NPN 30 watt transistor Ic 1A NPN npn transistor 60 volt 5v power transistor 60V transistor npn 1a TRANSISTOR NPN 60V Collector 5v npn TRANSISTOR PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    b 595 transistor

    Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor


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    MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335 PDF

    2N6718

    Abstract: 2N6716 2N6717 ic-250mA DSA003749
    Text: 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6716 Collector-Base Voltage VCBO


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    2N6716 2N6717 2N6718 250mA, 250mA 2N6718 2N6716 2N6717 ic-250mA DSA003749 PDF

    Ztx653

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZTX449 / ZTX453 / ZTX653 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.


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    ZTX449 ZTX453 ZTX653 2N6716 2N6717 2N6718 2N6718 Ztx653 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS


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    2N6497 PDF

    1000 volt pnp transistor

    Abstract: IC 7424 800 volt PNP transistor
    Text: PRELIMINARY SFT5321/23-28D SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 2 AMP NPN - 2 AMP PNP 75 VOLT NPN - 75 VOLT PNP NPN AND PNP BIPOLAR COMPLEMENTARY TRANSISTOR Designer’s Data Sheet


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    670-SSDI SFT5321/23-28D 500mA, 500mA) 10MHz) 1000 volt pnp transistor IC 7424 800 volt PNP transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw


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    3B69720 07C00256 000055b PDF

    TRS601

    Abstract: No abstract text available
    Text: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE | 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors


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    b17aD TRS601 PDF

    T1IS

    Abstract: 60 amp 600 Volt Diode 2S05 Diode TRS3015 MD14 TRS-3204S TRS-3604S TRS-4014S TRS-4404S TRS-5204S
    Text: 3869720 GENERAL'DIODE CORP GENERAL DIODE CORP 07C 00251 D -7”- 3 3 t£ / Dif| 3 0 ^ 7 8 0 DD0D551 5 07 SILICON NPN* Power Transistors TYPE NO. TRS-3204S tc MAX. COLL. OISS. HI Fit« Ah #25*C P« rc/D M U ) MAX. THERMAL RES. Janetion lo C t u I7.S ABSOLUT :MAX. RATINGS #2S* C.


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    TRS-3204S TRS-3604S TRS-4014S MO-14 TRS-5755 MD-14 TRS4015 TRS-6505 T1IS 60 amp 600 Volt Diode 2S05 Diode TRS3015 MD14 TRS-4404S TRS-5204S PDF

    2N6547

    Abstract: 2N654 12 volt 200 Amp PWM 2N6546
    Text: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS The 2N6546 and 2N6547 transistors are designed for high- NPN 2N6546 2N6547 voltage .high-speed,power switching inductive circuits where fail time is criticai.they are particularly, suited for 115 and 220 volt line


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    2N6546 2N6547 2N6546 2N654? 2N654Speratures, F0R2N6546 VCFXARE100 2N6S46, 2N654 12 volt 200 Amp PWM PDF

    2N6547

    Abstract: 2N6546 12 volt 200 Amp PWM
    Text: Æ&m o s p e c SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS NPN The 2N6546 and 2N6547 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fail 2N6546 2N6547 time is criticai.they are particularly, suited for 115 and 220 volt line


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    2N6546 2N6547 2N654S F0R2N6546 VCFXARE100 2N6S46, 12 volt 200 Amp PWM PDF

    icl8083

    Abstract: ICL8063 equivalent 2n3055 Equivalent ICL8063CPE ICL8063 2N3055 equivalent transistor NUMBER 2N3055 power amplifier circuit power amplifier transformer 2n3055 pin configuration transistor 2n3055 2N3055 diagram with power supply
    Text: ONüniran ICL8063 Power Transistor Driver-Amplifier Designed to operate with all varieties of operational amplifiers and other functions, two external power transistors o f any construction technique, and 8 to TO passive components, the ICL8063 is ideal for use in such


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    JCL8063 500kn ICL8063 ICL8063 ICH8510/8520/8530 icl8083 ICL8063 equivalent 2n3055 Equivalent ICL8063CPE 2N3055 equivalent transistor NUMBER 2N3055 power amplifier circuit power amplifier transformer 2n3055 pin configuration transistor 2n3055 2N3055 diagram with power supply PDF

    2N6545

    Abstract: 2N6544 S200 300 volt 16 ampere transistor
    Text: ÜE MOS PEC SWITCH MODE SERIES NPN SILICON POWER TRANSISTORS The 2N6544 and 2N6545 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fall NPN 2N6544 2N6545 time is critical.they are particularly, suited for 115 and 220 volt line


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    2N6544 2N6545 S200 300 volt 16 ampere transistor PDF

    2N3055 equivalent transistor NUMBER

    Abstract: Y2w TRANSISTOR 2n3055 motor control circuits schematic diagram audio power amplifier using 2n3055 2N3055 equivalent 2N3055 diagram with power supply 2N3055 transistor equivalent transistor Y2W ICL8063 circuit diagram equivalent transistor 2n3055
    Text: 01E 10753 3875081 G E SOLID STATE D ICL8063 Power Transistor Driver/Amplifier GENERAL DESCRIPTION FEATURES The ICL8063 is a unique monolithic power transistor driv­ er and amplifier that allows construction of minimum chip power amplifier systems. It includes built in safe operating


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    ICL8063 ICL8063 10kHz ICHB510/8520/8530 2N3055 equivalent transistor NUMBER Y2w TRANSISTOR 2n3055 motor control circuits schematic diagram audio power amplifier using 2n3055 2N3055 equivalent 2N3055 diagram with power supply 2N3055 transistor equivalent transistor Y2W ICL8063 circuit diagram equivalent transistor 2n3055 PDF

    GSTU6030

    Abstract: 910 IC GSTU6035 GSTU6040 TWX910-950-1942
    Text: SflUARE D CO/ G E N E R A L SSSSSDfl •=15 0DD2110 3 95D 0 2 1 9 0 3 9 1 8 5 9 0 GEN ERAL SEMICONDUCTOR •yC General Sf- Semiconductor « Industries, Inc r-3 3 -/3 • GSTU6030 GSTU6035 GSTU6040 B O U H R E n COMPHNY P/vt" TRANSISTORS HIGH POWER NPN D The GSTU series is a NPN silicon transistor designed for high speed switching systems. This


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    GSTU6030 GSTU6035 GSTU6040 O-204AA TWX910-950-1942 910 IC GSTU6040 TWX910-950-1942 PDF