FullFlex36
Abstract: TMS 1070 NL
Text: FullFlex FullFlex Synchronous SDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with Single Data Rate SDR operation on each port — SDR interface at 250 MHz
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36-Gb/s
484-ball
256-ball
FullFlex72
36-Mbit:
CYD36S72V18)
18-Mbit:
CYD18S72V18)
CYD09S72V18)
CYD04S72V18)
FullFlex36
TMS 1070 NL
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CYD18S18V18
Abstract: FullFlex36 CYD09S36V18 CYD18S36V18 ARRAY VCSEL
Text: PRELIMINARY FullFlex Synchronous SDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with SDR operation on each port — Single Data Rate SDR interface at 250 MHz
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36-Gb/s
484-ball
256-ball
FullFlex72
36-Mbit:
CYD36S72V18)
FullFlex36
FullFlex18
CYD18S18V18
CYD09S36V18
CYD18S36V18
ARRAY VCSEL
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FullFlex36
Abstract: No abstract text available
Text: PRELIMINARY FullFlex Synchronous SDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with Single Data Rate SDR operation on each port — SDR interface at 250 MHz
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36-Gb/s
484-ball
256-ball
FullFlex72
36-Mbit:
CYD36S72V18)
18-Mbit:
CYD18S72V18)
CYD09S72V18)
CYD04S72V18)
FullFlex36
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TMS 1070 NL
Abstract: BE5L NA820 str 350-430 FullFlex36 CYD04S18V18 CYD36S18V18-133BGI CYD36S36V18-133BGI CYD36S72V18-133BGI tca 780
Text: FullFlex FullFlex Synchronous SDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with Single Data Rate SDR operation on each port — SDR interface at 250 MHz
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36-Gb/s
484-ball
256-ball
FullFlex72
36-Mbit:
CYD36S72V18)
36Mx72
TMS 1070 NL
BE5L
NA820
str 350-430
FullFlex36
CYD04S18V18
CYD36S18V18-133BGI
CYD36S36V18-133BGI
CYD36S72V18-133BGI
tca 780
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TMS 1070 NL
Abstract: CYD09S18V18-167BBXC CYD09S36V18 CYD18S36V18 CYD04S18V18-200BBXC FullFlex36
Text: FullFlex FullFlex Synchronous SDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with Single Data Rate SDR operation on each port — SDR interface at 250 MHz
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36-Gb/s
484-ball
256-ball
FullFlex72
36-Mbit:
CYD36S72V18)
36Mx72
TMS 1070 NL
CYD09S18V18-167BBXC
CYD09S36V18
CYD18S36V18
CYD04S18V18-200BBXC
FullFlex36
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CYD04S18V18-200BBXC
Abstract: A20l cqe vco CYD18S36V18-200BBXI TMS 1070 NL FullFlex36
Text: FullFlex FullFlex Synchronous SDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with Single Data Rate SDR operation on each port — SDR interface at 250 MHz
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36-Gb/s
484-ball
256-ball
FullFlex72
36-Mbit:
CYD36S72V18)
18-Mbit:
CYD18S72V18)
CYD09S72V18)
CYD04S72V18)
CYD04S18V18-200BBXC
A20l
cqe vco
CYD18S36V18-200BBXI
TMS 1070 NL
FullFlex36
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FullFlex36
Abstract: No abstract text available
Text: FullFlex PRELIMINARY FullFlex Synchronous SDR Dual-Port SRAM Features • True dual-ported memory allows simultaneous access to the shared array from each port • Synchronous pipelined operation with SDR operation on each port — Single Data Rate SDR interface at 250 MHz
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36-Gb/s
484-ball
256-ball
FullFlex72
36-Mbit:
CYD36S72V18)
18-Mbit:
CYD18S72V18)
CYD09S72V18)
CYD04S72V18)
FullFlex36
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8180S18
Abstract: 8180S36 GS8180S36B-300 GS8180S36B-333 512Kx
Text: Preliminary GS8180S18/36B-333/300/250 18Mb Σ2x1B2 SDR Separate I/O SRAM 209-Bump BGA Commercial Temp Industrial Temp 250 - 333 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • SigmaRAM JEDEC standard pinout and package • Dual Single Data Rate interface
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GS8180S18/36B-333/300/250
209-Bump
209-bump,
209-Pin
GS8180S18B-333I
GS8180S18B-300I
GS8180S18B-250I
8180S18
8180S36
GS8180S36B-300
GS8180S36B-333
512Kx
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MCL 1 029
Abstract: ECHO schematic diagrams 2000-23 k4 8180S18 8180S36 GS8180S36B-333 Sigma ddr
Text: Advanced Information GS8180S09/18/36B-333/300/275/250 209-Bump BGA Commercial Temp Industrial Temp ΣRAM 2M x 9, 1M x 18, 512K x 36 Separate I/O Sigma SDR SRAM 333 MHz 1.8 V VDD 1.8 V and 1.5 V I/ Features • Observes the Sigma RAM pinout standard • 1.8 V +150/–100 mV core power supply
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GS8180S09/18/36B-333/300/275/250
209-Bump
209-bump,
8180S091836
MCL 1 029
ECHO schematic diagrams
2000-23 k4
8180S18
8180S36
GS8180S36B-333
Sigma ddr
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W986416EH
Abstract: W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
Text: PRODUCT GUIDE Winbond ISSI 2005 http://www.hengsen.cn 产品指南手册 PRODUCT GUIDE =WinbondISSI 授权香港及中国代理= 8 位单片机标准件 型号 W78C32C ROM 型式 ROM ROM RAM I/O 脚 外扩存储 器空间 工作速度 封装 定时器/
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W78C32C
Q4/04
IS25C64A-2
IS25C64A-3
16Kx8
IS25C128-2
W986416EH
W9864G2EH
W981216DH
verilog DTMF decoder
ISD1600
W9825G6CH
W9812G6DH
w981616ch
SIS 730S
isd1620
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NP05-11446-2E
Abstract: MB82DBS16164A-80L 250 MHZ SDR RAM
Text: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11446-2E 256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode MB82DBS16164A-80L TM FEATURES • • • • Pseudo SRAM with Single Data Rate SDR Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 3
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NP05-11446-2E
MB82DBS16164A-80L
NP05-11446-2E
MB82DBS16164A-80L
250 MHZ SDR RAM
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q1257
Abstract: Q1129 Q4331 TSOP66 Q4311 tsop 4021 tsop ddr2 ram DDR RAM 512M DRAM spectrum infineon TSOP-66
Text: 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 1 Product Information 2003 / 2004 DRAM SPECTRUM www.infineon.com Never stop thinking. 2002791-D-RAM–hoch17 11.09.2003 15:07 Uhr Seite 2 Introduction September 2003. This edition of the DRAM Spectrum has been developed
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2002791-D-RAM
hoch17
DDR400
PC3200)
B112-H6731-G10-X-7600
q1257
Q1129
Q4331
TSOP66
Q4311
tsop 4021
tsop ddr2 ram
DDR RAM 512M
DRAM spectrum infineon
TSOP-66
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400M
Abstract: MB82DBS08314A-80L
Text: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11445-2E 256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode MB82DBS08314A-80L TM FEATURES • • • • • • Pseudo SRAM with Single Data Rate SDR Burst Interface Compliant with Common Specifications for Mobile RAM (COSMORAM) Revision 3
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NP05-11445-2E
MB82DBS08314A-80L
400M
MB82DBS08314A-80L
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PD23C64020
Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Text: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed
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X13769XJ2V0CD00
A10BL
8K/64
256M5
PD45256441
54-pin
PC133
PC100
MC-22000
PD23C64020
PD45D128442
4M84
PD45D128842
0443 IC
PD23C64000AL
45V16A
PD264
A80L
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is62c51216al
Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital
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Automotive Product Selector Guide
Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
Text: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from
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IS23SC55160
Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are
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Untitled
Abstract: No abstract text available
Text: SONY CXK77Q36162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 512K x 36 Description The CXK77Q36162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer
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CXK77Q36162GB
CXK77Q36162GB
750mA
700mA
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Altera Cyclone III
Abstract: SDR FPGA adc types of multipliers INVESTMENT MULTIPLIER spartan 3a AT-513 giga media converter interfacing adsp with spartan-3 fpga fpga fsk fpga based Numerically Controlled Oscillator ofdm spartan 3a dsp
Text: White Paper Architecture and Component Selection for SDR Applications Introduction In wireless communications, particularly the military space, software-defined radio SDR is the goal. The basic concept of SDR is to position the digital-to-analog separation as close as possible to the antenna. This is
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CXK77L18162AGB-25
Abstract: CXK77L18162AGB-27 CXK77L18162AGB-3 ddr1 ram
Text: SONY CXK77L18162AGB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 1M x 18 Description The CXK77L18162AGB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer
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CXK77L18162AGB
CXK77L18162AGB
BGA-153P-021
BGA153-P-1422
CXK77L18162AGB-25
CXK77L18162AGB-27
CXK77L18162AGB-3
ddr1 ram
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IS43LR32640
Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and
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i1-44-42218428
IS43LR32640
is61wv5128
Product Selector Guide
is42s86400
IS46R16160B
IS25LD010
IS25LD025
IS25LQ
IS62WV5128DALL
BGA 168
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IC1210-m128LQ
Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Text: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are
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sdr sdram pcb layout guidelines
Abstract: sdr sdram pcb layout "sdr sdram" pcb layout sdram controller "sdr sdram" design guideline ldr resistor AN141 ARM922T EPXA10 excalibur Board
Text: Excalibur Solutions— Using the SDRAM Controller September 2002, ver. 1.0 Introduction Application Note 141 In modern embedded systems, synchronous dynamic RAM SDRAM provides an inexpensive way of incorporating large amounts of memory into a design. There are two functional types of SDRAM, single data rate
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CXK77Q18162GB
Abstract: CXK77Q18162GB-25 CXK77Q18162GB-27 CXK77Q18162GB-3 CXK77Q36162GB CXK77Q36162GB-25 CXK77Q36162GB-27 CXK77Q36162GB-3
Text: SONY CXK77Q36162GB / CXK77Q18162GB 16Mb DDR1 HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 25/27/3 Preliminary Description The CXK77Q36162GB (organized as 524,288 words by 36 bits) and the CXK77Q18162GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input
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CXK77Q36162GB
CXK77Q18162GB
CXK77Q36162GB
BGA-153P-021
BGA153-P-1422
750mA
700mA
CXK77Q18162GB
CXK77Q18162GB-25
CXK77Q18162GB-27
CXK77Q18162GB-3
CXK77Q36162GB-25
CXK77Q36162GB-27
CXK77Q36162GB-3
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