3c90
Abstract: permeability 3c90 -u57 MBW098 MBW093 material grade specification 3c90 MBW097 Material Grade 3C90 philips 3c90
Text: Philips Components Material grade specification 3C90 3C90 SPECIFICATIONS SYMBOL µi µa B PV ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 100 °C; 25 kHz; 200 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 100 °C; 25 kHz; 200 mT 100 °C; 100 kHz;
|
Original
|
PDF
|
MBW092
MBW096
MBW093
100oC
MBW098
MBW097
3c90
permeability
3c90 -u57
MBW098
MBW093
material grade specification 3c90
MBW097
Material Grade 3C90
philips 3c90
|
SWI0805CT
Abstract: No abstract text available
Text: CHIP INDUCTOR WIRE WOUND TYPE SWI 0805 2012 CERAMIC SERIES Specification Inductance 1 (nH) Percent Q2 S.R.F. Tolerance Min Min Max Max (MHz) (Ω) (mA) Part No. 3 RDC 4 IDC SWI 0805 CT 2N2 2.2 @ 250 MHz B, S 50 @ 1000 MHz 6000 0.06 800 SWI 0805 CT 2N7 2.7 @ 250 MHz
|
Original
|
PDF
|
HP-4287A
E5071B
HP-16193
HP-4338B
0084g
SWI0805CT
|
Untitled
Abstract: No abstract text available
Text: PCHC40 Power Chip High Current Inductors Dimensions In. D PCHC40 A .520 Max. B .390 Max. C .120 D .330 E .250 Max. F .340 G .060 H .160 Allied Part Number Inductance (µh) PCHC40-R33M .33 Tolerance (%) 20 E C B H A F SRF Reference (MHz) DCR Max. (Ω) Isat
|
Original
|
PDF
|
PCHC40
PCHC40
PCHC40-R33M
16Arms
PCHC40-R68M
PCHC40-1R0M
PCHC40-1R5M
PCHC4-40°
PCHC40-100M
PCHC40-150M
|
Untitled
Abstract: No abstract text available
Text: Single wires TYPE ET xxxx SPC or SPCA -90°C / +200°C PTFE 250 Volts AC Standard colours See page III SPECIFICATIONS Conductor : ASTM-B-224 ASTM-B-298 ASTM-B-624 Insulation : ASTM-D-4895 Insulated wire : NF-C-93523/4 NEMA-HP3 PRIMARY WIRE B C D E F G H J
|
Original
|
PDF
|
ASTM-B-224
ASTM-B-298
ASTM-B-624
ASTM-D-4895
NF-C-93523/4
|
NF C 93-523
Abstract: 93523
Text: Single wires TYPE ET xxxx SPC or SPCA -90C°/ +200°C PTFE 250 Volts AC Standard colours See page III SPECIFICATIONS Conductor : ASTM-B-224 ASTM-B-298 Insulation : ASTM-D-4895 Insulated wire : NF-C-93523/4 NEMA-HP3 ASTM-B-624 PRIMARY WIRE B C D E F G H J K L
|
Original
|
PDF
|
ASTM-B-224
ASTM-B-298
ASTM-D-4895
NF-C-93523/4
ASTM-B-624
NF C 93-523
93523
|
GS8322ZV18
Abstract: GS8322ZV18B GS8322ZV72
Text: GS8322ZV18 B/E /GS8322ZV36(B/E)/GS8322ZV72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and
|
Original
|
PDF
|
GS8322ZV18
/GS8322ZV36
/GS8322ZV72
8322ZV18
8322ZVxx
GS8322ZV18B
GS8322ZV72
|
GS8322Z72
Abstract: GS8322Z18
Text: Product Preview GS8322Z18 B/E /GS8322Z36(B/E)/GS8322Z72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features and simplifies input signal timing.
|
Original
|
PDF
|
GS8322Z18
/GS8322Z36
/GS8322Z72
8322Z18
165-BGA
GS8322Z72
|
GS8644Z
Abstract: GS8644ZV18 GS8644ZV18B GS8644ZV72
Text: Product Preview GS8644ZV18 B/E /GS8644ZV36(B/E)/GS8644ZV72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and
|
Original
|
PDF
|
GS8644ZV18
/GS8644ZV36
/GS8644ZV72
209-Pin
133MHz
8644ZVxx
GS8644Z
GS8644ZV18B
GS8644ZV72
|
Untitled
Abstract: No abstract text available
Text: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and
|
Original
|
PDF
|
GS8644Z18
/GS8644Z36
/GS8644Z72
209-Pin
8644Zxx
|
GS8322ZV18
Abstract: GS8322ZV72
Text: Product Preview GS8322ZV18 B/E /GS8322ZV36(B/E)/GS8322ZV72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O Features and simplifies input signal timing. • NBT (No Bus Turn Around) functionality allows zero wait
|
Original
|
PDF
|
GS8322ZV18
/GS8322ZV36
/GS8322ZV72
8322ZVxx
GS8322ZV72
|
Untitled
Abstract: No abstract text available
Text: GS8322Z18 B/E /GS8322Z36(B/E)/GS8322Z72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and
|
Original
|
PDF
|
GS8322Z18
/GS8322Z36
/GS8322Z72
119ble
8322Z18
|
Untitled
Abstract: No abstract text available
Text: GS8322Z18 B/E /GS8322Z36(B/E)/GS8322Z72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and
|
Original
|
PDF
|
GS8322Z18
/GS8322Z36
/GS8322Z72
8322Z18
|
Untitled
Abstract: No abstract text available
Text: GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and
|
Original
|
PDF
|
GS8644Z18
/GS8644Z36
/GS8644Z72
209-Pin
8644Zxx
|
GS8322Z18
Abstract: GS8322Z72
Text: GS8322Z18 B/E /GS8322Z36(B/E)/GS8322Z72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and
|
Original
|
PDF
|
GS8322Z18
/GS8322Z36
/GS8322Z72
8322Z18
GS8322Z72
|
|
|
Untitled
Abstract: No abstract text available
Text: GS8322ZV18 B/E /GS8322ZV36(B/E)/GS8322ZV72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and
|
Original
|
PDF
|
GS8322ZV18
/GS8322ZV36
/GS8322ZV72
209-ation
8322ZV18
8322ZVxx
|
GS8644Z36GE-250
Abstract: GS8644Z18 GS8644Z18B GS8644Z36B GS8644Z72C
Text: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and
|
Original
|
PDF
|
GS8644Z18
/GS8644Z36
/GS8644Z72
209-Pin
133MHz
8644Zxx
GS8644Z36GE-250
GS8644Z18B
GS8644Z36B
GS8644Z72C
|
C5000-3300
Abstract: B380 c 5000 3300 C1500 SDB380 B 80 40C1500 SDB250
Text: Rectifier d io d e bridges Type VrrM V rms Ifavm t, . Load Charge R /C A A °c 0.9/0.8 125 10 ms 1», = V V B 40 C 800 Si, .D, .SD B 80 C 800 Si, .D, .SD B 125 C 800 Si, .D, .SD 100 40 190 300 80 125 B 250 C 800 Si, .D, .SD 600 250 B 380 C 800 Si, .D, .SD
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: ^C oncord TEFLON* INSULATED TERMINALS .040 DIA. * _i_rr_ 6 Z = 0 = l t R f U N -= J t- N -E D— - - C - -1— i l l w -E - -J FIG 330 A B C D E F G 1105-01 1105-02 .250 .250 .218 .218 .375 .625 .250 .500 .281 .281 1.187 1.687
|
OCR Scan
|
PDF
|
1111R-01
1111R-15
1111R-36
1111R-11
1111R-04
|
Untitled
Abstract: No abstract text available
Text: TUSONIX CA^cm RSIC T U S O N IX S T Y L E N U M B E R 868 838 808 M A X IM U M D IA M E T E R 0) 200/5 08 300/7 62 370/940 L E A D S P A C IN G (S) 250/6 35 250/6 35 250/635 250/635 250/6 35 375/952 375/952 375/9 52 375/9 52 375/952 375/9.52 375/952 22 22
|
OCR Scan
|
PDF
|
R47II
|
PR11
Abstract: VPP20-250
Text: TOLERANCE UNLESS SPECIFIED = ,XX= +/- .015 .XXX= +/- .005 VPP20-250.DC2 1.312 1.375 co OQ .400 □ □ CD en □ □ 1200 w A t v De \ DC RESISTANCE IN OHMS ,.200 0 VPP20-250 * 0 4 CLASS B io / TURNS RATIO = 100% REF REF I0JP 6 PRODUCTION TESTS FRACTIONS3 +/- .032
|
OCR Scan
|
PDF
|
vpp20-250
adh\12
115/230V
4000v
PR11
|
midi 2270
Abstract: No abstract text available
Text: PICO’s Miniaturized PowerJnductors PLUG-IN Size 1 2 3 Max. H eight A Max. Dia. B B e it C ircle C StandO ff Dia. .250 6.35 .280 (7.11) .340 (8.63) .415 (10.54) .320 (8.13) .410 (10.41) .500 .21 (5.33) .260 (6.6) .350 (8.89) .440 (11-17) .13 (3.30) .160
|
OCR Scan
|
PDF
|
MIL-PRF-27
less-30%
midi 2270
|
diode 476 k
Abstract: No abstract text available
Text: SEMIKRON SKilP 292 GPL 170 - 476 CTV Absolute Maximum Ratings Symbol Values |Conditions1' Units IG B T & Inverse Diode VcES Vcc 9; lc T|3> Visot 4'' If Ifm Ifsm f t Diode V V A °c V A A A kA2s 1700 1200 250 40 . + 150 3500 250 500 2160 23,4 Operating D C link voltage
|
OCR Scan
|
PDF
|
B7-58
diode 476 k
|
CM8-2402
Abstract: CM8-2417 CM7-71
Text: 080 Johnson Drive Buffalo Grove, IL 60089 Chicago M iniature WHERE INNOVATION COMES TO LIGHT a 708-459-3400 Fax 708-459-2708 T-1 B i- P in B a s e ( . 0 5 0 " 130 (3.30) MAX. “* 1 n 0-1 / _1 Incandescent !“ * x (éV 250 (ess Products i + I UU. i
|
OCR Scan
|
PDF
|
CM7272
CM7274
CM7680
CM7683
CM7714
CM7715
CM9343
CM9344
CM9347
CM8095
CM8-2402
CM8-2417
CM7-71
|
Untitled
Abstract: No abstract text available
Text: Feed Through Terminals DK 4R DK 4R DK 4R D O -o - * - o B ranch w ith Resistor & Test P oint <S B ranch with R esistor B ranch w ith R esistor & Test Point (Ò) Terminal Block Selection Data A vailable O ptions Version Beige PA Beige PA 250 f t 9 1 0 616000 0
|
OCR Scan
|
PDF
|
|
