SSP7404NA
Abstract: MosFET
Text: SSP7404NA 35A, 30V, RDS ON 2.8 mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.
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SSP7404NA
27BSC
30-Dec-2013
SSP7404NA
MosFET
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toshiba c 2238
Abstract: TB7001FL MOSFT
Text: TB7001FL Preliminary TOSHIBA Multi Chip Module TB7001FL For high current and low voltage applications Synchronous buck converter module This product is a synchronous buck switching converter module. The additional components for DC-DC converter are a PWM control IC, an external inductor, and input and output capacitors.
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TB7001FL
toshiba c 2238
TB7001FL
MOSFT
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Untitled
Abstract: No abstract text available
Text: IRFHM8330PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 9.3 6.6 HEXFET Power MOSFET m 9.9 S S S D nC 25 G D D A D D PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application
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IRFHM8330PbF
com/technical-info/appnotes/an-994
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Untitled
Abstract: No abstract text available
Text: IRFHM8330PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 9.3 6.6 HEXFET Power MOSFET m 9.9 S S S D nC 25 G D D A D D PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application
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IRFHM8330PbF
AN-994
com/technical-info/appnotes/an-994
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2SK3262-01MR
Abstract: No abstract text available
Text: 2SK3262-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
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2SK3262-01MR
O-220F15
2SK3262-01MR
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2sk3262
Abstract: 2SK3262-01MR MOSFET 200v 20A n.channel
Text: 2SK3262-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
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2SK3262-01MR
O-220F15
2sk3262
2SK3262-01MR
MOSFET 200v 20A n.channel
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2SK3262-01MR
Abstract: 2SK3262
Text: 2SK3262-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
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2SK3262-01MR
O-220F15
2SK3262-01MR
2SK3262
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Untitled
Abstract: No abstract text available
Text: IRFHM8326PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 20 4.7 HEXFET Power MOSFET m 6.7 S S S G D nC 70 D D A D D PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application
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IRFHM8326PbF
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a1290
Abstract: K4204 2SK4204 2SK42 2SK4204LS ENA1290
Text: 2SK4204LS Ordering number : ENA1290 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4204LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C
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2SK4204LS
ENA1290
PW10s,
A1290-5/5
a1290
K4204
2SK4204
2SK42
2SK4204LS
ENA1290
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Untitled
Abstract: No abstract text available
Text: IRFHM8326PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 20 4.7 HEXFET Power MOSFET m 6.7 S S S G D nC 70 D D A D D PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application
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IRFHM8326PbF
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Untitled
Abstract: No abstract text available
Text: IRFHM8329PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 13 6.1 HEXFET Power MOSFET m 8.8 S S S G D nC 24 D D A D D PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application
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IRFHM8329PbF
TN-994
com/technical-info/appnotes/an-994
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Untitled
Abstract: No abstract text available
Text: IRFHM8329PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 13 6.1 HEXFET Power MOSFET m 8.8 S S S G D nC 24 D D A D D PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application
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IRFHM8329PbF
AN-994
com/technical-info/appnotes/an-994
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60T03GP
Abstract: 60t03gs 60T03 AP60T03GP 60T0 60t03g ap60t03 THV100
Text: AP60T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching Speed BVDSS 30V RDS ON 12mΩ ID G 45A S Description Advanced Power MOSFETs from APEC provide the
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AP60T03GS/P
O-263
AP60T03GP)
O-220
O-220
60T03GP
60T03GP
60t03gs
60T03
AP60T03GP
60T0
60t03g
ap60t03
THV100
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MOSFET Module 24v 1000A
Abstract: No abstract text available
Text: PRELIMINARY YRH40.241 12-28V, 40A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ For N+1 and 1+1 Redundant Systems Suitable for Power Supplies with HiccupPLUS Overload Behavior Dual Input with Single Output Minimal Losses - Mosfets Instead of Diodes
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YRH40
2-28V,
DS-YRH40
241-EN-preliminary
MOSFET Module 24v 1000A
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IRF9310
Abstract: IRF9310TRPBF IRF9310PBF JESD47F IRF9310TR IRF p-CHANNEL MOSFET IRF 630 Datasheet ABD 630
Text: PD - 97437A IRF9310PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) ID -30 V 6 ' 4.6 mΩ 6 ' 6 ' * ' -20 (@TA = 25°C) A SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits
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7437A
IRF9310PbF
IRF9310TRPbF
IRF9310
IRF9310TRPBF
IRF9310PBF
JESD47F
IRF9310TR
IRF p-CHANNEL
MOSFET IRF 630 Datasheet
ABD 630
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Untitled
Abstract: No abstract text available
Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
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2SK3219-01MR
O-220F15
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Untitled
Abstract: No abstract text available
Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
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2SK3219-01MR
O-220F15
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AN-994
Abstract: IRL3303 IRL3303L IRL3303S
Text: PD - 95578 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRL3303S l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3303LPbF IRL3303SPbF l l HEXFET Power MOSFET
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IRL3303S)
IRL3303L)
IRL3303LPbF
IRL3303SPbF
EIA-418.
AN-994
IRL3303
IRL3303L
IRL3303S
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Untitled
Abstract: No abstract text available
Text: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3218-01
O-220AB
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2SK3218-01
Abstract: 2SK3219-01MR
Text: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters
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2SK3219-01MR
O-220F15
2SK3218-01
2SK3219-01MR
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Untitled
Abstract: No abstract text available
Text: PD - 97437 IRF9310PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) ID -30 V 6 ' 4.6 mΩ 6 ' 6 ' * ' -20 (@TA = 25°C) A SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits
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IRF9310PbF
IRF9310TRPbF
J-STD-020Dâ
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irf9310
Abstract: No abstract text available
Text: PD - 97437A IRF9310PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) ID -30 V 6 ' 4.6 mΩ 6 ' 6 ' * ' -20 (@TA = 25°C) A SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits
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7437A
IRF9310PbF
IRF9310TRPbF
irf9310
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spartan 3a
Abstract: SPARTAN-3 XC3S400 24v 12v 20A regulator circuit diagram power supply SAMSUNG MONITOR str panasonic 614 battery 10nF 50V X7R samsung 7 pin str for 24v 3 amp to 220 package Circuit diagram of Regulated Power supply 6V 5A EL7566 ISL6401
Text: HIGH PERFORMANCE ANALOG Power Management Application Guide for Xilinx FPGAs Using Switchers to Power Xilinx FPGAs and DDR Memory Increased gate counts and higher clock speeds in programmable logic ICs have resulted in higher current requirements while smaller device geometries are driving lower core supply voltages. Both
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C536
Abstract: DIODE C536 IOR 536 C535 C538 C537 F C535 B C537 DIODE
Text: PD - 9.1323B International IOR Rectifier IRL3303S/L HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3303S Low-profile through-hole (IRL3303L) 175°C OperatingTemperature Fast Switching
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IRL3303S)
IRL3303L)
1323B
IRL3303S/L
C-538
C536
DIODE C536
IOR 536
C535
C538
C537 F
C535 B
C537 DIODE
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