C4080
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET
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24N60C5M
O-220
20070704a
C4080
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions
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24N60C5M
O-220
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Untitled
Abstract: No abstract text available
Text: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
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24N60C5M
O-220
20090209d
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IXKP24N60C5M
Abstract: No abstract text available
Text: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
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Original
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24N60C5M
O-220
20080523c
IXKP24N60C5M
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET
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Original
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24N60C5M
O-220
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PDF
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Untitled
Abstract: No abstract text available
Text: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
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Original
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24N60C5M
O-220
20090209d
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET
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24N60C5M
O-220
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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