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    IXYS Corporation IXTQ24N55Q

    MOSFETs 24 Amps 550V 0.270 Rds
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    Abstract: IXTQ24N55Q
    Text: Advanced Technical Information IXTQ 24N55Q Power MOSFETs Q-Class VDSS = 550 V = 24 A ID25 RDS on = 0.27 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		24N55Q 728B1 123B1 728B1 065B1 24n55 IXTQ24N55Q PDF

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    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 24N55Q Power MOSFETs Q-Class VDSS = 550 V = 24 A ID25 RDS on = 0.27 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		24N55Q 728B1 123B1 728B1 065B1 PDF