thyristor ABB
Abstract: 5STB 24N2800 ABB Semiconductors THYRISTOR
Text: Key Parameters VSM = 2800 ITAVM = 2350 ITRMS = 3680 ITSM = 43000 VT0 = 0.85 rT = 0.160 Bi-Directional Control Thyristor V A A A V mΩ 5STB 24N2800 Doc. No. 5SYA 1041-02 July 98 Features •Two thyristors integrated into one wafer •Patented free-floating silicon technology
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24N2800
24N2800
24N2600
24N2200
CH-5600
thyristor ABB
5STB 24N2800
ABB Semiconductors THYRISTOR
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24N26
Abstract: 5STB24N2800 ABB thyristor 5
Text: VSM = 2800 V ITAVM = 2430 A ITRMS = 3820 A ITSM = 43000 A VT0 = 0.85 V rT = 0.160 mΩ Ω Bi-Directional Control Thyristor 5STB 24N2800 Doc. No. 5SYA1041-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology
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24N2800
5SYA1041-03
24N2600
24N2200
CH-5600
24N26
5STB24N2800
ABB thyristor 5
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24N28
Abstract: No abstract text available
Text: VSM = 2800 V ITAVM = 2430 A ITRMS = 3820 A ITSM = 43000 A VT0 = 0.85 V rT = 0.160 mΩ Bi-Directional Control Thyristor 5STB 24N2800 Doc. No. 5SYA1041-03 Dec.00 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for traction, energy and industrial applications
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24N2800
5SYA1041-03
24N2800
24N2600
24N2200
67xVSM
CH-5600
24N28
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