hb2e
Abstract: No abstract text available
Text: Outline Dimensions Vishay Semiconductors I-PAK - S DIMENSIONS FOR I-PAK - S in millimeters E A b3 E1 c2 3 1 2 L L5 L4 H D D1 4 b2 e c e SYMBOL DIMENSIONAL REQUIREMENTS MIN. NOM. MAX. E 6.40 6.60 6.70 L 3.98 4.13 4.28 L4 0.66 0.76 0.86 L5 1.96 2.16 2.36 D 6.00
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24-May-11
hb2e
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PDF
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ht 1618
Abstract: No abstract text available
Text: PRA 100, 135, 182 CNW Vishay Sfernice High Precision Thin Film Chip Resistor Arrays FEATURES PRA arrays can be used in most applications requiring a matched pair (or set) of resistor elements. The networks provide 1 ppm/°C TCR tracking, a ratio tolerance as tight as
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AEC-Q200
2002/95/EC
11-Mar-11
ht 1618
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Untitled
Abstract: No abstract text available
Text: VS-20CUT10, VS-20CWT10FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA • Extremely low reverse leakage D-PAK (TO-252AA)
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Original
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VS-20CUT10,
VS-20CWT10FN
O-251AA)
O-252AA)
2002/95/EC
VS-20CUT10
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: ILD1615, ILQ1615 Vishay Semiconductors Optocoupler, Phototransistor Output, Dual, Quad Channel , 110 °C Rated Dual Channel FEATURES A 1 8 C C 2 7 E • Operating temperature from - 55 °C to + 110 °C A 3 6 C • Identical channel to channel footprint C 4
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Original
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ILD1615,
ILQ1615
2002/95/EC
2002/96/EC
UL1577,
E52744
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product VS-APU3006-F3, VS-EPU3006-F3 Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES • Low forward voltage drop • Ultrafast recovery time • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC TO-247AC
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Original
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VS-APU3006-F3,
VS-EPU3006-F3
2002/95/EC
O-247AC
JEDEC-JESD47
11-Mar-11
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PDF
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dpak DIODE ANODE COMMON
Abstract: No abstract text available
Text: VS-20CUT10, VS-20CWT10FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA • Extremely low reverse leakage D-PAK (TO-252AA)
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Original
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VS-20CUT10,
VS-20CWT10FN
O-251AA)
O-252AA)
2002/95/EC
VS-20CUT10
2011/65/EU
2002/95/EC.
2002/95/EC
dpak DIODE ANODE COMMON
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-10UT10, VS-10WT10FN www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 10 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage I-PAK TO-251AA D-PAK (TO-252AA)
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Original
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VS-10UT10,
VS-10WT10FN
O-251AA)
O-252AA)
2002/95/EC
JEDEC-JESD47
VS-10UT10
2011/65/EU
2002/95/EC.
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-6CUT04, VS-6CWT04FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA Base common cathode • Extremely low reverse leakage
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Original
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VS-6CUT04,
VS-6CWT04FN
O-251AA)
O-252AA)
2002/95/EC
VS-6CUT04
2011/65/EU
2002/95/EC.
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA30TA60CPbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS
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Original
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VS-HFA30TA60CPbF
2002/95/EC
O-220AB
O-220AB
VS-HFA30TA60CPbF
11-Mar-11
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PDF
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SQ3456BEV_RC
Abstract: No abstract text available
Text: SQ3456BEV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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SQ3456BEV
AN609,
1080u
6325u
7639m
0386m
7330m
3147m
7568m
24-May-11
SQ3456BEV_RC
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PDF
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Untitled
Abstract: No abstract text available
Text: SQD40N10-25_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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SQD40N10-25
AN609,
2157m
8491m
1949m
0253m
5519m
6099m
1395m
24-May-11
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PDF
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EPH3006
Abstract: No abstract text available
Text: New Product VS-APH3006-F3, VS-EPH3006-F3 Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES • Low forward voltage drop • Hyperfast soft recovery time • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC
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Original
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VS-APH3006-F3,
VS-EPH3006-F3
2002/95/EC
O-247AC
JEDEC-JESD47
VS-APH3006-F3
11-Mar-11
EPH3006
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PDF
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APU3006
Abstract: No abstract text available
Text: New Product VS-APU3006-F3, VS-EPU3006-F3 Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES • Low forward voltage drop • Ultrafast recovery time • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC TO-247AC
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Original
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VS-APU3006-F3,
VS-EPU3006-F3
2002/95/EC
O-247AC
JEDEC-JESD47
VS-APU3006-F3
11-Mar-11
APU3006
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PA 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
E323964
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PA 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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Original
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UL94-V0
E323964
22-JUL-11
24-MAY-11
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PDF
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5V dual channel optocoupler
Abstract: No abstract text available
Text: ILD1615, ILQ1615 Vishay Semiconductors Optocoupler, Phototransistor Output, Dual, Quad Channel , 110 °C Rated Dual Channel FEATURES A 1 8 C C 2 7 E • Operating temperature from - 55 °C to + 110 °C A 3 6 C • Identical channel to channel footprint C 4
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Original
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ILD1615,
ILQ1615
2002/95/EC
2002/96/EC
UL1577,
E52744
2011/65/EU
2002/95/EC.
2011/65/EU.
5V dual channel optocoupler
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PDF
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94047
Abstract: No abstract text available
Text: VS-HFA08TB60PbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS •
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Original
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VS-HFA08TB60PbF
2002/95/EC
VS-HFA08TB60PbF
11-Mar-11
94047
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PDF
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Untitled
Abstract: No abstract text available
Text: ILD55, ILQ30, ILQ31, ILQ55 Vishay Semiconductors Optocoupler, Photodarlington Output, Dual, Quad Channel FEATURES Dual Channel A 1 8 E C 2 7 C C 3 6 C • Fast fall time, 35 s A 4 5 E • Single, dual and quad channel • 125 mA load current rating • Fast rise time, 10 μs
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Original
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ILD55,
ILQ30,
ILQ31,
ILQ55
2002/95/EC
2002/96/EC
UL1577,
E52744
i179trademarks
2011/65/EU
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB120PbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS
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Original
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VS-HFA08TB120PbF
2002/95/EC
O-220AC
O-220AC
VS-HFA08TB120PbF
11-Mar-11
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PDF
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PRA135
Abstract: ipc-7351 IPC-7351A VISHAY PRA
Text: PRA 100, PRA 135, PRA 182 CNW www.vishay.com Vishay Sfernice High Precision Thin Film Chip Resistor Arrays FEATURES • High stability passivated nichrome resistive layer 0.02 % on ratio, 1000 h at Pn at + 70 °C • Tight TCR (10 ppm/°C) and TCR tracking
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Original
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
PRA135
ipc-7351
IPC-7351A
VISHAY PRA
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PDF
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Untitled
Abstract: No abstract text available
Text: ILD55, ILQ30, ILQ31, ILQ55 Vishay Semiconductors Optocoupler, Photodarlington Output, Dual, Quad Channel FEATURES Dual Channel A 1 8 E C 2 7 C C 3 6 C • Fast fall time, 35 µs A 4 5 E • Single, dual and quad channel • 125 mA load current rating • Fast rise time, 10 µs
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Original
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ILD55,
ILQ30,
ILQ31,
ILQ55
2002/95/EC
2002/96/EC
UL1577,
E52744
2011/65/EU
2002/95/EC.
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-6CUT04, VS-6CWT04FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 2 x 3 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA Base common cathode • Extremely low reverse leakage
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Original
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VS-6CUT04,
VS-6CWT04FN
O-251AA)
O-252AA)
VS-6CUT04
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: IL255 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES DIP • AC or polarity insensitive inputs • Continuous forward current, 130 mA • Built-in reverse polarity input protection A/C 1 6 B C/A 2 5 C • Industry standard DIP package
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IL255
2002/95/EC
2002/96/EC
i179005-3
IL255
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IL202, IL203 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection FEATURES DIP • Guaranteed at IF = 1.0 mA A 1 6 B C 2 5 C 3 4 E NC SMD • High collector emitter voltage, BVCEO = 70 V • Long term stability
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Original
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IL202,
IL203
2002/95/EC
2002/96/EC
E52744
i179005-3
IL203
2002/95/EC.
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PDF
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