fujitsu
Abstract: fujitsu transistor
Text: FLAT PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 24 PIN CERAMIC To Top / Package Lineup / Package Index FPT-24C-A03 24-pin ceramic FPT Lead pitch 15° Sealing method Metal seal FPT-24C-A03 24-pin ceramic FPT (FPT-24C-A03) 2.01±0.30 (.079±.012) 0.94±0.20
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FPT-24C-A03
24-pin
FPT-24C-A03)
F24016SC-1-2
fujitsu
fujitsu transistor
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24-PIN
Abstract: No abstract text available
Text: FLAT PACKAGE 24 PIN CERAMIC FPT-24C-A03 24-pin ceramic FPT Lead pitch 15° Sealing method Metal seal FPT-24C-A03 24-pin ceramic FPT (FPT-24C-A03) 2.01±0.30 (.079±.012) 0.94±0.20 (.037±.008) 2.56±0.30 (.100±.012) Ø11.81±0.20 (.464±.008) NO.1 INDEX
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FPT-24C-A03
24-pin
FPT-24C-A03)
F24016SC-1-2
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Untitled
Abstract: No abstract text available
Text: FLAT PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 24 PIN CERAMIC FPT-24C-A03 24-pin ceramic FPT Lead pitch 15° Sealing method Metal seal FPT-24C-A03 24-pin ceramic FPT (FPT-24C-A03) 2.01±0.30 (.079±.012) 0.94±0.20 (.037±.008) 2.56±0.30 (.100±.012) Ø11.81±0.20
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FPT-24C-A03
24-pin
FPT-24C-A03)
F24016SC-1-2
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Untitled
Abstract: No abstract text available
Text: !" #$$%&' &( )*+& & ,)&-&)& & && &. .)&(' . & )&(+&&&
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2632
Abstract: 24C33
Text: !""#$%&'%' ( *%$ % +(%,%(% % %% %- .-(%'& - $% (%'* %
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atmel Heat Resistance SOIC
Abstract: atmel 24c ATMEL SOIC 8S1 PACKAGE MATERIAL ATMEL Package type 8S1 20P3 28P6 ATMEL 719 24C
Text: Thermal Characteristics of Atmel Packages The thermal performance of the semiconductor package is a very important consideration for the board designer. The reliability and functional life of the device is directly related to its junction operating temperature. As the temperature of the device increases, the stability
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0636D
04/01/xM
atmel Heat Resistance SOIC
atmel 24c
ATMEL SOIC 8S1 PACKAGE MATERIAL
ATMEL Package type 8S1
20P3
28P6
ATMEL 719 24C
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ATMEL 719 24C
Abstract: TQFP PACKAGE thermal resistance 20P3 28P6
Text: Thermal Characteristics of Atmel Standard Packages The thermal performance of the semiconductor package is a very important consideration for the board designer. The reliability and functional life of the device is directly related to its junction operating temperature. As the temperature of the device
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0636E
ATMEL 719 24C
TQFP PACKAGE thermal resistance
20P3
28P6
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Untitled
Abstract: No abstract text available
Text: AC/DC Power Modules TMM 24 Series, 24 Watt CB Scheme Features ◆ Fully encapsulated low profile plastic UL 508 UL 60950-1 UL 60601-1 UL 60950-1 ES 60601-1 casing in PCB- or chassis mount version ◆ 2 x MOPP Medical safety according to AAMI/ANSI ES 60601-1:2005 R and
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6v8a
Abstract: DEVICE MARKING CODE 150A 051 6V8A diode 68A on 6v8a DO214AC 44 marking CODE 91A 24 do-214ac P4SMA250C diode 001 6V8A
Text: Silicon Avalanche Diodes 400W Surface Mount Transient Voltage Supressors RoHS P4SMA Series FEATURES • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction • Low Inductance
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P4SMA550CA
DO-214AC
6v8a
DEVICE MARKING CODE 150A
051 6V8A
diode 68A
on 6v8a
DO214AC 44
marking CODE 91A
24 do-214ac
P4SMA250C
diode 001 6V8A
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csf250ei
Abstract: CSF250 CSF350 CS250EI CSF350EQ cs250 lm 3055 CSF350EQ-L lambda power supply lm CS250TM
Text: Sirius 250/350 250-350W Multiple Output Modular Power Supply Universal AC Input, PFC AC Fail Signal / Global Inhibit Up to 6 fully regulated & independent outputs 150% Peak Current Capability Low Leakage Medical Options Input Transient Protection
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50-350W
CS250EI-24
CS250TM-5/15
CS250EI-24-5/12E
CSF350EQ-LL-5/12-12
CSF250EI-3/5-12B
CS250TM-5/12-12B-24C
CS250EI-5/12-3
3L-12/12G
1-800-LAMBDA-4
csf250ei
CSF250
CSF350
CS250EI
CSF350EQ
cs250
lm 3055
CSF350EQ-L
lambda power supply lm
CS250TM
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CSF250
Abstract: CSF350EQ CSF350 Lambda lm regulated power supply cs250 csf250ei Sirius
Text: Sirius 250/350 250-350W Multiple Output Modular Power Supply Customized Power Supplies Universal AC Input, PFC AC Fail Signal / Global Inhibit Up to 6 fully regulated & independent outputs 150% Peak Current Capability Low Leakage Medical Options
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50-350W
CS250EI-24
CS250TM-5/15
CS250EI-24-5/12E
CSF350EQ-LL-5/12-12
CSF250EI-3/5-12B
CS250TM-5/12-12B-24C
CS250EI-5/12-3
3L-12/12G
1-800-LAMBDA-4
CSF250
CSF350EQ
CSF350
Lambda lm regulated power supply
cs250
csf250ei
Sirius
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Memory Map
Abstract: MCF5307
Text: REVISION NO.: 1.0 REVISION DATE: 7/29/98 PAGES AFFECTED: PAGE A-2 SEE RED CHANGE BAR APPENDIX A REGISTER MEMORY MAP The following lists several keynotes regarding the Register Memory Map table: • Bold letters mark registers that are restricted to supervisor access. While in user mode,
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MCF5307
Memory Map
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xn 1049 dp
Abstract: atmel u122 o2c ADQ44 a6252 ic a6252 atmel 938 32c ADQ36 22B35 ad 11800 t8 ATMEL 812 24C
Text: This Document can not be used without Samsung's authorization. 7. Circuit Diagram 4 SE DONA Signature : 3 3 APPROVAL 2005/10/05 SEDONA MAIN BA41-#####A PR 0.81 CPU :Intel Y onah667 Chip Set :Intel Calistoga & ICH7-M Remarks : Mobility Platform : : : : : :
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onah667
BA41-#
heet18.
heet19.
heet20
heet24.
heet25.
M56-P
xn 1049 dp
atmel u122 o2c
ADQ44
a6252 ic
a6252
atmel 938 32c
ADQ36
22B35
ad 11800 t8
ATMEL 812 24C
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Untitled
Abstract: No abstract text available
Text: Features • Frequency Receiving Range of 3 Versions • • • • • • • • • • • • • • • • • • – f0 = 312.5MHz to 317.5MHz or – f0 = 431.5MHz to 436.5MHz or – f0 = 868MHz to 870MHz 30 dB Image Rejection Receiving Bandwidth
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868MHz
870MHz
300kHz
315MHz/433MHz
600kHz
ATA5723C/ATA5724C:
107dBm,
10E-3
113dBm,
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26fbp06
Abstract: SKE350CA B80C2000 Fagor* fbi 3.7 B250C1500 1000 SKE400 FBU4K BAI 59 fagor B80C1500 26FBP04
Text: FAGOR ^ Numerical Index 1N4001 . . 1N4001F . . 1N4001GP . . 1N4002 . . 1N4002F . . 1N4002GP . .
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1N4001
1N4001F
1N4001GP
1N4002
1N4002F
1N4002GP
1N4003
1N4003F
1N4003GP
1N4004
26fbp06
SKE350CA
B80C2000
Fagor* fbi 3.7
B250C1500 1000
SKE400
FBU4K
BAI 59
fagor B80C1500
26FBP04
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24C1S
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION ^C|/ 16K Commercial Industrial X24C16 X24C16I Jbar on/io v q nit 2 048x8 Bit Electrically Erasable PROM TYPICAL FEATURES • Low Power CMOS — 2 mA Active Current Typical — 60 juA Standby Current Typical • Internally Organized as Eight Pages
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X24C16
X24C16I
048x8
X24C16,
X24C16I
24C1S
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SS1230
Abstract: 1AZ21 IN747a 1AZ10 1AZ11 1AZ12 1AZ13 1AZ15 1AZ16 1AZ18
Text: - "/ m % ft S P mW (mA) 1AZ6.S 1AZ7.5 1AZ8.2 1AZ9.1 ÌAZIO IAZ11 1AZ12 1AZ13 1AZ15 1AZ16 1AZ18 1AZ20 1AZ22 1AZ24 1AZ27 1AZ30 1AZ33 1AZ36 1AZ47 1AZ51 1AZ200 1AZ220-Y 1AZ220-Z 1AZ240 1AZ240-Y 1AZ240-Z 1AZ270 1AZ270-X 1AZ270-Y 1AZ270-Z 1AZ300 1AZ300-X 1AZ300-Y
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1AZ10
1AZ11
1AZ12
1AZS00-Z
1AZ330
296mV/Â
1AZ330-X
270mV/Â
1AZ330-Y
1AZ330-Z
SS1230
1AZ21
IN747a
1AZ10
1AZ13
1AZ15
1AZ16
1AZ18
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lz 24h k
Abstract: 1AZ10 1AZ11 1AZ12 1AZ13 1AZ15 1AZ16 1AZ18 1AZ20 1AZ22
Text: - "/ m % ft S P mW (mA) 1AZ6.S 1AZ7.5 1AZ8.2 1AZ9.1 ÌAZIO IAZ11 1AZ12 1AZ13 1AZ15 1AZ16 1AZ18 1AZ20 1AZ22 1AZ24 1AZ27 1AZ30 1AZ33 1AZ36 1AZ47 1AZ51 1AZ200 1AZ220-Y 1AZ220-Z 1AZ240 1AZ240-Y 1AZ240-Z 1AZ270 1AZ270-X 1AZ270-Y 1AZ270-Z 1AZ300 1AZ300-X 1AZ300-Y
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1AZ10
1AZ11
1AZ12
1AZ330
296mV/Â
1AZ330-X
270mV/Â
1AZ330-Y
1AZ330-Z
287mV/Â
lz 24h k
1AZ10
1AZ13
1AZ15
1AZ16
1AZ18
1AZ20
1AZ22
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IC 24c16
Abstract: L24C16 24C16 TLO 64 st 24c16
Text: ROHM CORP/ EXEL MELECS j r \ ^ / bbE ]> • TflSIDm QODlbDT SET v f M IC R O E L E C T R O N I C S A dvance Inform ation n A r * i c 16,384-Bit Serial Electrically Erasable PROM 3 Volt and 5 Volt Operation FE A T U R E S Low Pow er C M O S — A ctive curren t less than 1 mA
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384-Bit
IC 24c16
L24C16
24C16
TLO 64
st 24c16
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IEC512-3
Abstract: No abstract text available
Text: REV NOTES; T H IS CONNECTOR W AS DESIG NED TO M EET T H E A P P L IC A B L E PE R FO R M A N C E REQ UIR EM ENTS OF PICMG 3 .0 R1.0 A d v a n c e d T C A S PEC IFIC ATIO N F S C A T A L O G NUMBER. D A T E CODE A N D M A N U FA C TU R IN G CODE L O C A T E D A P R O X IM A T E L Y A S
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YU5M-19M_
DKK90NS
IEC512-3
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Untitled
Abstract: No abstract text available
Text: HB56UW264EJN-6B/7B 2,097,152-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 BYTE DIMM HITACHI ADE-203-589 Z Preliminary - Rev. 0.0 May. 10, 1996 Description The HB56UW264EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56UW264EJN-6B/7B
152-word
64-bit
168-pin
ADE-203-589
HB56UW264EJN
16-Mbit
HM51W17805BJ)
24C02)
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in5349b
Abstract: IN5339B IN5378B IN5343b in5364B in5378b ZENER DIODE IN5358B IN5378 IN5339B diode IN5357B
Text: ITTIMK-J 1N5333B Microsemi Corp. 1N5388B th ru SILICON 5 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT C A P A B IL IT Y • AVAILABLE IN ± 5, ± 10 or ± 2 0 % TOLERANCES Note 1 MAXIMUM RATINGS O perating T em perature: —65°C to + 2 0 0 °C
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1N5333B
1N5388B
in5349b
IN5339B
IN5378B
IN5343b
in5364B
in5378b ZENER DIODE
IN5358B
IN5378
IN5339B diode
IN5357B
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Untitled
Abstract: No abstract text available
Text: r >4SC Type X 3 4 7 l C A P A C I T O I i S M etallized P o ly p ro p yle n e C a p a cito rs (CMPPJ B o x S ty le M otor Run TABLE l-N O M IN A L DIM ENSIO NS CAP MFD 2 5 0 VAC H T L D .4 1.220 45 - 7 .8 .92 5 D 571 .96 5 - 1.220 .925 571 .965
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RXMH-2
Abstract: two relay stabilizer circuit diagram 3 relay voltage stabilizer 1MRK001 RXKL1 automatic changeover switch circuit diagram for generator rxmh2 ABB RXsf1 RK 411 RK411
Text: il II II A D V R X EG 21 and R A EG 1MRK 509 011-BEN Voltage relay and protection assemblies February 1997 Changed since November 1995 Data subject to change without notice ABB Network Partner S E 9 4 07 13 Features • Single- and three-phase versions for over- or
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137-GA
137-KA
001-AB
4U24C
002-AB
003-AB
004-AB
315-B
315-C
015-BEN
RXMH-2
two relay stabilizer circuit diagram
3 relay voltage stabilizer
1MRK001
RXKL1
automatic changeover switch circuit diagram for generator
rxmh2
ABB RXsf1
RK 411
RK411
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