VS-HFA16TB120SPBF
Abstract: hf marking code HFA16TB120S IRFP250 vs-hfa
Text: VS-HFA16TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum
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VS-HFA16TB120SPbF
J-STD-020,
2002/95/EC
VS-HFA16TB120SPbF
18-Jul-08
hf marking code
HFA16TB120S
IRFP250
vs-hfa
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V50100PW
Abstract: No abstract text available
Text: New Product V50100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation
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V50100PW
22-B106
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
V50100PW
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SMD TRANSISTOR MARKING 2.x
Abstract: No abstract text available
Text: VS-HFA08TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum
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VS-HFA08TA60CSPbF
J-STD-020,
2002/95/EC
AEC-Q101
11-Mar-11
SMD TRANSISTOR MARKING 2.x
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V50100PW
Abstract: No abstract text available
Text: New Product V50100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation
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V50100PW
22-B106
2002/95/EC
2002/96/EC
11-Mar-11
V50100PW
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v50100pw
Abstract: diode J-STD-002 1412D
Text: New Product V50100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation
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V50100PW
22-B106
2002/95/EC
2002/96/EC
10lectual
18-Jul-08
v50100pw
diode
J-STD-002
1412D
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vs-hfa16tb120spbf
Abstract: No abstract text available
Text: VS-HFA16TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum
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VS-HFA16TB120SPbF
J-STD-020,
2002/95/EC
11-Mar-11
vs-hfa16tb120spbf
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FTM280C12D
Abstract: hx8347 FTM280C B N03K 314S 300R SAM3U-EK SAM3U4E LML6401 MT29F2G16ABD PB20 CR1225
Text: SAM3U-EK Development Board . User Guide 6478C–ATARM–24-Feb-10 1-2 6478C–ATARM–24-Feb-10 SAM3U-EK Development Board User Guide Section 1
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6478C
24-Feb-10
FTM280C12D
hx8347
FTM280C
B N03K 314S 300R
SAM3U-EK
SAM3U4E
LML6401
MT29F2G16ABD
PB20
CR1225
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Untitled
Abstract: No abstract text available
Text: REVISIONS THIRD ANGLE PROJ. NOTES: REV 1. MATERIALS AND FINISHES: BODY - BRASS, NICKEL PLATING CONTACT - BeCu, GOLD PLATING OUTER CONTACT - BeCu, NICKEL PLATING INSULATOR - PTFE BAYONET - BRASS, NICKEL PLATING 2. ELECTRICAL: A. IMPEDANCE: 75 OHM B. FREQUENCY RANGE: DC - 3 GHz
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17-Mar-10
17-May-10
611X-4432-100
MIL-STD-348
24-Feb-10
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Packaging Information
Abstract: No abstract text available
Text: Packaging Information Vishay High Power Products Bulk Specifications for SMA, SMB, SMC DIMENSIONS in millimeters H W L 100 23 80 17 39 40 35 40 38 80 38 40 35 Note • Tolerance: ± 3 mm Document Number: 95397 Revision: 24-Feb-10 For technical questions concerning discrete products, contact: diodestech@vishay.com
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24-Feb-10
Packaging Information
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HFA08TA60CS
Abstract: IRFP250 vs-hfa
Text: VS-HFA08TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum
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Original
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VS-HFA08TA60CSPbF
J-STD-020,
2002/95/EC
AEC-Q101
VS-HFA08TA60CSPbF
18-Jul-08
HFA08TA60CS
IRFP250
vs-hfa
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V50100PW
Abstract: No abstract text available
Text: New Product V50100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation
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Original
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PDF
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V50100PW
22-B106
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
V50100PW
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TA60CSPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum
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Original
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PDF
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VS-HFA08TA60CSPbF
J-STD-020,
2002/95/EC
AEC-Q101
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VS-HFA16TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum
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Original
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PDF
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VS-HFA16TB120SPbF
J-STD-020,
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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L348
Abstract: No abstract text available
Text: F0-55118-B i 10 HONEYWELL PART NUMBER 23.3±0.25 BZ-2RD-P4 07.1 ±0.05 09.55±O.3 —013.5±O.3 — * R12 — PRODUCT CODE AND0120 r- 0.4 MAX [016] PRETRAVEL / 21,2±0.5 [,835±.020] OPERATING POSITION r- 1 18 DOCUMENT 11 0061739 CHANGED BY MBN CHECK 24FEB10 CMH
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F0-55118-B
AND0120
24FEB10
6A/250V
L348
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T RELEASED BY ^ C O E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S - - REVISIO N S RESERVED. G LTR A1 D WIRE SERRATIONS RED RAW N PER ECR 10-004009 DATE
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24FEB10
B-152
B-545
31MAR2000
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