K2404
Abstract: No abstract text available
Text: H-IIF Series • Heavy metal Platinum: Pt introduced for lifetime control • Higher-speed diode built-in • High breakdown tolerance (high dv/dt) H H: High-Voltage Power MOSFET II: Series (Generation) F: FRD (Fast Recovery Diode) built-in H-IIF Series Built-in Diode trr and Breakdown Tolerance
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2SJ458/2SK
60V/500
K2404
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200H
Abstract: DS1994 DS2404 DS2404B DS2404S DT-26S
Text: DS2404 DALLAS SEMICONDUCTOR FEATURES DS2404 EconoRAM Time Chip PIN ASSIGNMENT • 4096 bits of nonvolatile d u a l-p o rt m em ory including real tim e do ck/calend ar in binary format, program mable interval timer, and program m able p o w e r-o n cycle counter
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DS2404
64-bit
48-bit
256-bits
256-bit
200H
DS1994
DS2404
DS2404B
DS2404S
DT-26S
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TO247 package
Abstract: SML10EUZ12BC
Text: SML10EUZ12BC Ehanced Ultrafast Recovery Diode 1200 Volt, 2 x 10 Amp Back of Case Cathode TECHNOLOGY SML 10EUZ12BC 1 - Anode 1 The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with
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SML10EUZ12BC
10EUZ12BC
TO247 package
SML10EUZ12BC
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES Quad Audio Switch SSM2404 FEATURES “Clickless” Bilateral Audio Switching Four SPST Switches in a 20-Pin Package Ultralow THD+N: 0.0008% @ 1 kHz 2 V rms, RL= 100 k il Low Charge Injection: 35 pC typ High OFF Isolation: -100 dB typ (RL = 10 k il @ 1 kHz)
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SSM2404
20-Pin
SSM2404
SSM24S4
SSH2494A
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ufnf230
Abstract: UFNF93H UFNF9 40 gd 4n diode UFN232
Text: POWER MOSFET TRANSISTORS HfflSI? 200 Volt, 0.4 Ohm N-Channel UFNF232 UFNF233 FEATURES • Fast S w itching • Low Drive Current DESCRIPTION The U nitrode power M O SFET d esign utilizes the m ost advanced technology available. T h is efficie n t design a ch ieves a very low R dsioih and a high tran scon d u ctan ce.
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UFNF232
UFNF233
UFN230
UFN231
UFN232
UFN233
ufnf230
UFNF93H
UFNF9
40 gd 4n diode
UFN232
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FN230
Abstract: No abstract text available
Text: UNITRODE CORP 9347963 D E | c1 3 4 7 t:]tJ3 UNITRODE CORP 92D D G lG fiS l 5 10851 POWER MOSFET TRANSISTORS UFNF230 UFNF231 UFNF232 UFNF233 200 Volt, 0.4 Ohm N-Channel FEA TU R ES • F asl Sw itch in g • Low Drive Current DESCRIPTIO N The U nitrode pow er M O SFET design u tilizes the m ost advan ce d technology available.
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UFNF230
UFNF231
UFNF232
UFNF233
UFN232
FN230
C710J
FN230
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J115 mosfet
Abstract: MRF175LU
Text: MOTOROLA SEM ICO NDU CTO R TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect T ransistors MRF175LU M RF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU
MRF175LV
28cal
MRF175L
MRF175LU
MRF175LV
J115 mosfet
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175C
Abstract: No abstract text available
Text: PSMN016-100PS N-channel 100V 16 mΩ standard level MOSFET in TO220 Rev. 01 — 1 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and
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PSMN016-100PS
PSMN016-100PS
175C
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MRF151G
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF151G RF P o w e r Field-Effect T ra n sisto r N-Channel Enhancement-Mode MOSFET . . . designed fo r b roadband co m m ercia l and m ilita ry a pp licatio n s at fre q u en cies to 175 MHz. The h ig h pow er, high gain and broadband perfo rm a n ce o f th is device makes
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RF151G
MRF151G
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Untitled
Abstract: No abstract text available
Text: TO -22 0A B PSMN016-100PS N-channel 100V 16 mΩ standard level MOSFET in TO-220 Rev. 3 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product
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PSMN016-100PS
O-220
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Untitled
Abstract: No abstract text available
Text: TO -2 20F PSMN016-100XS N-channel 100V 16 mΩ standard level MOSFET in TO220F SOT186A Rev. 2 — 26 September 2011 Preliminary data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
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PSMN016-100XS
O220F
OT186A)
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Untitled
Abstract: No abstract text available
Text: TO -22 0A B PSMN016-100PS N-channel 100V 16 mΩ standard level MOSFET in TO220 Rev. 2 — 21 July 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and
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PSMN016-100PS
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Untitled
Abstract: No abstract text available
Text: D2 PA K PSMN016-100BS N-channel 100V 16 mΩ standard level MOSFET in D2PAK Rev. 2 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and
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PSMN016-100BS
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Untitled
Abstract: No abstract text available
Text: D2 PA K PSMN016-100BS N-channel 100V 16 mΩ standard level MOSFET in D2PAK Rev. 1 — 25 October 2011 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and
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PSMN016-100BS
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Untitled
Abstract: No abstract text available
Text: TO -2 20F PSMN016-100XS N-channel 100V 16 mΩ standard level MOSFET in TO220F SOT186A Rev. 3 — 21 October 2011 Preliminary data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
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PSMN016-100XS
O220F
OT186A)
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PDF
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Untitled
Abstract: No abstract text available
Text: TO -2 20F PSMN016-100XS N-channel 100V 16 mΩ standard level MOSFET in TO220F SOT186A Rev. 4 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,
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PSMN016-100XS
O220F
OT186A)
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MC33129D
Abstract: diode r-552
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC34129 MC33129 Specificatio n s and A p p lic a tio n s Inform ation HIGH PERFORMANCE CURRENT MO DE CONTROLLER HIGH PERFORMANCE CURRENT MODE CONTROLLER S IL IC O N M O N O L IT H IC I N T E G R A T E D C IR C U IT The MC34129 series are high performance current mode switch
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MC34129
MC33129
TL431A
MC33129D
diode r-552
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alpine 3555
Abstract: Newport Components 1013 clare 852 unitronics JI 3009-2 1131L gentech A320 54711 74146
Text: You are in the Sales Info File • Click for Main Menu Product Categories CLICK ANY ITEM Return to Main Menu PC Card Power Protected Switches Low-Dropout Linear Voltage Regulators Switch-Mode Voltage Regulators Voltage References Switched-Capacitor Voltage Converters
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Devices RF Power MOSFET RFM 12U7X RFM12U7X Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds V, 6.0V, 4.8 Vds = 4.8V, 4.8V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~
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RFM12U7X
150mA,
350mA,
550mA,
750mA,
950mA,
1150mA
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ssm-2126A
Abstract: TETRA ACELP AD22151 AD698 DAC8842 AD7874 SSM-2125A AD6439 ad53042 AD9851
Text: GENERAL PURPOSE COMPONENTS OVERVIEW A/D CONVERTERS AMPLIFIERS OVERVIEW OVERVIEW <1 MSPS Single Supply >1 MSPS <20 >20 MSPS Sigma-Delta Low Bias Current Matched Transistors NPN and PNP Single Supply High Speed Instrumentation Codecs and I/O Ports MicroConverters
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16-Bit
32-Bit
AD9884
AD9483
ADV7183
10-Bit
ADV7187
ADV7185
ADV601
ADV601LC
ssm-2126A
TETRA ACELP
AD22151
AD698
DAC8842
AD7874
SSM-2125A
AD6439
ad53042
AD9851
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Untitled
Abstract: No abstract text available
Text: TPS65290 www.ti.com SLVSBY5B – APRIL 2013 – REVISED JUNE 2013 LOW QUIESCENT CURRENT, MULTI-MODE PMIC FOR BATTERY POWERED, ENERGY HARVESTING APPLICATIONS Check for Samples: TPS65290 FEATURES 1 • • • • • • • • • • • • Operating Input Voltage Range: 2.2 V to 5 V
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TPS65290
500-mA
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MSP430 ultrasound
Abstract: No abstract text available
Text: TPS65290 www.ti.com SLVSBY5B – APRIL 2013 – REVISED JUNE 2013 LOW QUIESCENT CURRENT, MULTI-MODE PMIC FOR BATTERY POWERED, ENERGY HARVESTING APPLICATIONS Check for Samples: TPS65290 FEATURES 1 • • • • • • • • • • • • Operating Input Voltage Range: 2.2 V to 5 V
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TPS65290
500-mA
MSP430 ultrasound
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TPS65290 www.ti.com SLVSBY5B – APRIL 2013 – REVISED JUNE 2013 LOW QUIESCENT CURRENT, MULTI-MODE PMIC FOR BATTERY POWERED, ENERGY HARVESTING APPLICATIONS FEATURES 1 •
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TPS65290
500-mA
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tb31224cf
Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future
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SCE0007A
tb31224cf
transistor 2sk1603
TA8264AHQ
TC94A58FAG
TA7769P
TA8275HQ
2SK1603
ta8266hq
2SK2056
S2Y52
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