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    24 V PNP 8 TRANSISTOR ARRAY Search Results

    24 V PNP 8 TRANSISTOR ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    24 V PNP 8 TRANSISTOR ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40841

    Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
    Text: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C 40841 40841 MOSFET CA3096AE CA3096 CA3096AM CA3096AM96 CA3096CE CA3096E

    40841

    Abstract: 40841 MOSFET 3096A CA3096A pnp array pnp npn dual emitter connected PNP Relay Driver T2300B CA3096AM CA3096AE
    Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 40841 MOSFET 3096A pnp array pnp npn dual emitter connected PNP Relay Driver T2300B CA3096AM CA3096AE

    40841

    Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent

    40841 MOSFET

    Abstract: 2158D CA3096 CA3096E equivalent CA3096A CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096C CA3096E
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 MOSFET 2158D CA3096 CA3096E equivalent CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096E

    CA3096

    Abstract: transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096A CA3096AE 40841 MOSFET CA3096AM96
    Text: CA3096, CA3096A, CA3096C UC T T P RO D E T E ODUC L TE PR OBSO U IT T BS L E S U A3 0 9 6 HF POSSIB January 2004 NPN/PNP Transistor Arrays Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096 transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096AE 40841 MOSFET CA3096AM96

    CA3096

    Abstract: 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096A CA3096AM CA3096AM96
    Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096AM CA3096AM96

    chip die npn transistor

    Abstract: No abstract text available
    Text: 700 Series 20V BIPOLAR ARRAY DESIGN MANUAL Last Revision Date: 2 December 2005 The 700 Series Design Manual has been originated and is maintained by Hans Camenzind, Array Design Inc. San Francisco. Feedback is welcome. Array Design offers design assistance


    Original     		PDF

    ca3096

    Abstract: CA3096AE
    Text: HARRIS SEIUCOND SECTOR b lE D • 43G 2271 TTT ■ IHAS CA3096 HARRIS S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Description Applications • D 047D 13 The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C CA3096. ca3096 CA3096AE

    ca3096

    Abstract: thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays
    Text: CA3096, CA3096A, CA3096C H A R R IS S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096A. CA3096C ca3096 thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays

    ca3096

    Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
    Text: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    OCR Scan     		PDF CA3096 CA3096C, CA3096A CA3096A, CA3096, CA3096C CA3096. ca3096 CA3096AE 639 TRANSISTOR PNP CA3096E

    T 402 transistor

    Abstract: 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array
    Text: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA401/402 Semicustom Linear Array Features Description • High-speed CBIC process: 250 MHz NPN and PNP The ALA401/402 Semicustom Linear Arrays are inte­ grated circuits consisting of vertical NPN and PNP


    OCR Scan     		PDF ALA401/402 PR352A21 PR352A2 NR151A01 NR151 005002b T 402 transistor 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array

    Untitled

    Abstract: No abstract text available
    Text: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA201/202 UHF Semicustom Linear Arrays Features Description • High-speed CBIC process: 4.5 GHz NPN, 3.75 GHz PNP The ALA201/202 UHF Semicustom Linear Arrays are


    OCR Scan     		PDF ALA201/202 NU321A01) PU322A01 PU342A01 PU342A NU3A2A01

    TO-202 transistor

    Abstract: UHF power TRANSISTOR PNP
    Text: JUN 5 1991 - Data Sheet * . • ■- -■■■ AT&T r Microelectronics ALA201/202 UHF Semicustom Linear Arrays Features Description ■ High-speed CBIC process 4.5 GHz NPN, 3.75 GHz PNP The ALA201 /202 UHF Semicustom Linear Arrays are integrated circuits consisting of vertical NPN and


    OCR Scan     		PDF ALA201/202 ALA201 DS91-029LBC DS89-092LBC) TO-202 transistor UHF power TRANSISTOR PNP

    harris 3096

    Abstract: No abstract text available
    Text: H A R R IS SEfllCOND SECTOR HARRIS 40E D B 4 3 D 2 2 7 1 0D3S30M T I IHAS GA3096, CA 3096A CA3096C N -P -N /P -N -P Transistor Arrays August 1991 CA3096A, CA309G, CA3096C Essentia/ Differences Applications • Five-Independent Transistors ►Three N-P-N and


    OCR Scan     		PDF 0D3S30M GA3096, CA3096C CA3096A, CA309G, CA3096 A3096 CA3096A harris 3096

    transistor 669

    Abstract: CA3096E RCA-CA3096CE CA3096AE CA3096CE CA3096 CA3096A CA3096C thyristor firing circuits schematic of 2f npn transistor
    Text: G E SOLID STATE 01 D E | 3A7SDfll DDlMblS M • CA3096, CA3096A, CA3096C T S 3 ¿5 N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Tw o p-n-p Applications:


    OCR Scan     		PDF CA3096, CA3096A, CA3096C RCA-CA3096CE, CA3096E, CA3096AE CA3096AE. 92CS-33305 CA3096H transistor 669 CA3096E RCA-CA3096CE CA3096CE CA3096 CA3096A CA3096C thyristor firing circuits schematic of 2f npn transistor

    CA3096

    Abstract: No abstract text available
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    OCR Scan     		PDF CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096

    4221 transistor

    Abstract: qp-8 AC 128 pnp transistor
    Text: G S-THOMSON 7 f l c T ~ | 7 ^ a cì 5 B 7 000b711 LINEAR COMPONENT ARRAYS A unique feature o f the POLY-USE A and G array is the tw o level metalization which simplifies routing, increases the percent utilization o f the components on the array and provides improved


    OCR Scan     		PDF 000b711 4221 transistor qp-8 AC 128 pnp transistor

    str 40200

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 D E j 3A7S0Ö1 GGlMblS «4 | CA3096, CA3096A, CA3096C “T ' H 3 Z S N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Two p-n-p Applications:


    OCR Scan     		PDF CA3096, CA3096A, CA3096C CA3096H str 40200

    3400 8k transistor

    Abstract: No abstract text available
    Text: GEC PLESSEY SEMICONDS 31E D 37bflSS2 OOllbfli *1 • P 1L E 8 8 E Y March 1990 SEMICONDUCTORS■ MF SERIES MACROCHIP HIGH FREQUENCY BIPOLAR ANALOG ARRAYS DESCRIPTION The M F Series is a family of 5 arrays designed for use in high speed analog applications.


    OCR Scan     		PDF 37bflSS2 100MHz 00V/us /-10mV 3400 8k transistor

    op amp 741 model PSpice

    Abstract: pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic
    Text: Q PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­


    OCR Scan     		PDF PS2314, op amp 741 model PSpice pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 transistor 2x MM1008 DN660 me 4946 operational amplifier discrete schematic

    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 D E | 36 75 0 6 1 ODlMtES 7 | _ Arrays CA3097 Thyristor/Transistor Array For Military, Commercial, and Industrial Applications Features: • Complete isolation between elements m n-p-n transistor - VCeo = 30 V min. Ic = 100 mA (max.)


    OCR Scan     		PDF CA3097 221TB

    chip die npn transistor

    Abstract: MM1007
    Text: 0PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­


    OCR Scan     		PDF PS2314, chip die npn transistor MM1007

    Untitled

    Abstract: No abstract text available
    Text: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction


    OCR Scan     		PDF LA201 LA202

    7 amps pnp transistor

    Abstract: 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module
    Text: E C I SEMICONDUCTOR MAE D • 305fl7b7 0 0 0 0 D7 4 Oôb « E C I S -jy DESCRIPTION The ECI Semiconductor EM series has been generated to provide cost and space effective high performance analog system solutions in silicon for your specific application. The EM family of low-cost 30v Bipolar Gridded Semicustom Arrays is


    OCR Scan     		PDF 302A7L7 0D00074 302fl7b7 7 amps pnp transistor 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module