quint-diode mtbf
Abstract: AK43
Text: TRIO-PS/3AC/24DC/20 Primary switched power supply, 3-phase, output current: 20 A INTERFACE Data Sheet 102781_01_en PHOENIX CONTACT - 06/2007 Description TRIO POWER is the rail mountable 24 V power supply unit with basic functions. With an output voltage of 24 V DC and
|
Original
|
PDF
|
TRIO-PS/3AC/24DC/20
QUINT-DIODE/40,
quint-diode mtbf
AK43
|
TRIO-PS/1AC/24DC/10
Abstract: TRIO-PS/1AC/24DC/ 5
Text: TRIO-PS/1AC/24DC/20 Primary switched power supply, 1-phase, output current: 20 A INTERFACE Data Sheet 102779_02_en PHOENIX CONTACT - 06/2007 Description TRIO POWER is the rail mountable 24 V power supply unit with basic functions. With an output voltage of 24 V DC and
|
Original
|
PDF
|
TRIO-PS/1AC/24DC/20
QUINT-DIODE/40,
TRIO-PS/1AC/24DC/10
TRIO-PS/1AC/24DC/ 5
|
DO-213AA
Abstract: SGL34-100 SGL34-20 SGL34-30 SGL34-40 SGL34-50 SGL34-60 SGL34-90
Text: SGL34-20 . SGL34-100 SGL34-20 . SGL34-100 Surface Mount Schottky Rectifier Diodes Schottky-Gleichrichterdioden für die Oberflächenmontage Version 2006-04-24 0.4 0.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20.100 V Plastic case
|
Original
|
PDF
|
SGL34-20
SGL34-100
DO-213AA
UL94V-0
SGL34-20.
SGL34-50.
SGL34-90.
DO-213AA
SGL34-100
SGL34-20
SGL34-30
SGL34-40
SGL34-50
SGL34-60
SGL34-90
|
skn diodes
Abstract: semikron skn 50 SKN 21 semikron SKN 2000 diode skn 21 SKN 2700
Text: Rectifier Diodes VRSM VRRM V 1550 A 2000 A 400 600 1200 1600 2000 2400 2900 SKN 1500/04 – SKN 1500/12 SKN 1500/16 SKN 1500/20 SKN 1500/24 SKN 1500/29 – SKN 2000/06 SKN 2000/12 SKN 2000/16 SKN 2000/20 SKN 2000/24 – IFAV sin. 180; Tcase = 75 °C Symbol
|
Original
|
PDF
|
|
skn diodes
Abstract: SKN 21 semikron skn 50 diode skn 21 Semikron SKN 12 /16 SKN 2700 semikron SKN 2000
Text: Rectifier Diodes VRSM VRRM V 1550 A 2000 A 400 600 1200 1600 2000 2400 2900 SKN 1500/04 – SKN 1500/12 SKN 1500/16 SKN 1500/20 SKN 1500/24 SKN 1500/29 – SKN 2000/06 SKN 2000/12 SKN 2000/16 SKN 2000/20 SKN 2000/24 – Symbol IFAV sin. 180; Tcase = 75 °C
|
Original
|
PDF
|
|
20XS4200
Abstract: ISO11452 Wiring Diagram logo
Text: Freescale Semiconductor Advance Information Document Number: MC20XS4200 Rev. 2.0, 6/2012 Dual 24 V, 20 mOhm High Side Switch 20XS4200 The 20XS4200 device is part of a 24 V dual high side switch product family with integrated control, and a high number of protective and
|
Original
|
PDF
|
MC20XS4200
20XS4200
16-bit
ISO11452
Wiring Diagram logo
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC20XS4200 Rev. 2.0, 6/2012 Dual 24 V, 20 mOhm High Side Switch 20XS4200 The 20XS4200 device is part of a 24 V dual high side switch product family with integrated control, and a high number of protective and
|
Original
|
PDF
|
MC20XS4200
20XS4200
20XS4200
16-bit
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC20XS4200 Rev. 5.0, 11/2013 Dual 24 V, 20 mOhmHigh Side Switch 20XS4200 The 20XS4200 device is part of a 24 V dual high side switch product family with integrated control, and a high number of protective and
|
Original
|
PDF
|
MC20XS4200
20XS4200
20XS4200
16-bit
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information Document Number: MC20XS4200 Rev. 3.0, 5/2013 Dual 24 V, 20 mOhmHigh Side Switch 20XS4200 The 20XS4200 device is part of a 24 V dual high side switch product family with integrated control, and a high number of protective and
|
Original
|
PDF
|
MC20XS4200
20XS4200
20XS4200
16-bit
|
FDMA507PZ
Abstract: Dual P-Channel MOSFET
Text: FDMA507PZ Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 mΩ Features General Description Max rDS on = 24 mΩ at VGS = -5 V, ID = -7.8 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.
|
Original
|
PDF
|
FDMA507PZ
FDMA507PZ
Dual P-Channel MOSFET
|
Untitled
Abstract: No abstract text available
Text: FDMA507PZ Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = -5 V, ID = -7.8 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.
|
Original
|
PDF
|
FDMA507PZ
|
SUD50N10-34P
Abstract: SUD50N10-34P-E3 lcd tv inverter
Text: New Product SUD50N10-34P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.034 at VGS = 10 V 20 0.040 at VGS = 6.0 V 20 VDS (V) 100 Qg (Typ) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 24 nC COMPLIANT
|
Original
|
PDF
|
SUD50N10-34P
O-252
SUD50N10-34P-E3
18-Jul-08
SUD50N10-34P
SUD50N10-34P-E3
lcd tv inverter
|
marking 34P
Abstract: No abstract text available
Text: New Product SUD50N10-34P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.034 at VGS = 10 V 20 0.040 at VGS = 6.0 V 20 VDS (V) 100 Qg (Typ) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 24 nC COMPLIANT
|
Original
|
PDF
|
SUD50N10-34P
O-252
SUD50N10-34P-E3
08-Apr-05
marking 34P
|
Untitled
Abstract: No abstract text available
Text: Advance Information FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 mΩ Features General Description Max rDS on = 24 mΩ at VGS = -4.5 V, ID = -8 A This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.
|
Original
|
PDF
|
FDME910PZT
FDME910PZT
|
|
|
Untitled
Abstract: No abstract text available
Text: Advance Technical Data High Voltage IGBT Phase-Leg FII 24-170AH1 FII 24-170AH1 ISOPLUS i4-PACTM Package IC25 = 18 A VCES = 1700 V VCE sat = 6.0 V 3 5 4 1 1 2 5 IGBT Symbol Conditions VCES TVJ = 25∞C to 150∞C VGES Maximum Ratings 1700 V Continuous ± 20
|
Original
|
PDF
|
24-170AH1
24-170AH1
|
Untitled
Abstract: No abstract text available
Text: SKiiP 11AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Ts = 25 °C 12 A Ts = 70 °C 12 A 8 A ICnom ICRM MiniSKiiP 1 ICRM = 3 x ICnom 24 A -20 . 20 V 10 µs -40 . 175 °C Ts = 25 °C
|
Original
|
PDF
|
11AC12T4V1
E63532
|
1n52328
Abstract: 1N9656 1N52308 1M5232B 1N959B LN747 1N746A 1N747A 1N748A 1N750A
Text: böE D • b5Q1130 0D3T51G Tlfl ■ NSC5 NATL SEniCOND DISCRETE z* V* (Volts) Tolerance 5% 'r r (mA) (a) •r (MÄ) V (Volts) Tolerance 5% (lit* ) Zz (0 ) (UA) 3.3 1N746A 20 28 10 3.3 1N5226B 20 28 25 3.6 1N747A 20 24 10 3.6 1N5227B 20 24 15 3.9 1N748A 20
|
OCR Scan
|
PDF
|
DO-35
b5G1130
0D3T51G
1N746A
1N747A
1N748A
1N749A
1N750A
1N751A
1N752A
1n52328
1N9656
1N52308
1M5232B
1N959B
LN747
|
Untitled
Abstract: No abstract text available
Text: ELECTRONIC Terminal Blocks with Surge Suppression Devices n Front-entry with varistor VBN 2 4 V - W I 2 0 V AC/D C; l,N 6 0 -1 3 0 A Nominal current 20 A 0.08 - 2.5 m m 2 / AW G 28 -1 4 with suppressor diode V bn 24 V AC/DC - 230 V AC; lSN11 -122 A Nominal current 20 A
|
OCR Scan
|
PDF
|
lSN11
|
1n700
Abstract: diode 1N750 1N750 zener 1N751 1N753 1N750 400mW 1N746 1N747 1N748 1N749
Text: Zener Diodes • 1N746A— 1N759A P =400m W Package : DO-35 Vz Part No. Zz Ranking A Iz (mA) ( fl) Max. Iz (mA) Ir C/*A) Max. Vr (V) ESffl r 1N746 3.14—3.47 20 28 20 10 1 hvat ’ ' 3.42—3.78 20 24 20 10 1 1 WSi 1N747 1N748 3.71—4.10 20 23 20 10 B 3 ! ' 1N749
|
OCR Scan
|
PDF
|
MN746Aâ
1N759A
400mW
DO-35)
1N746
1N747
1N748
1N749
1N750
1N751
1n700
diode 1N750
1N750 zener
1N753
1N750 400mW
|
v1h diode
Abstract: DA0620
Text: FEATURES A v Xj • 1 0 0 -1 9 0 0 MHz ■ 1 dB LSB, 31 dB Range ■ CMOS Control MODEL NO. DA0620 PIN Diode 5 Section Attenuator ■ 24 Pin DIP 5 BIT PART IDENTIFICATION RF IN/OUT 1.27 24 23 22 21 20 19 18 17 16 15 RF IN/OUT 13 14 .20 1 f .20 T .018 OIA LEAD
|
OCR Scan
|
PDF
|
DA0620
AT-15VDCSUPPLY
v1h diode
DA0620
|
1N760
Abstract: 1N751
Text: Zener Diodes • 1N746A ~1N 759A P =400m W Package : DO-35 Vz Part No. Zz Ranking A E H r1N746 wm ’1N747 ms ' 1N748 1R tz CmA) ( fi) Max. Iz (mA) <*A) Vr (V) Max. 3.14~3.47 20 28 20 10 1 3.42"'“ 3.78 20 24 20 10 1 3 .7 1 -4 .1 0 20 23 20 10 1 wàr 1N749
|
OCR Scan
|
PDF
|
1N746A
DO-35)
r1N746
1N747
1N748
1N749
1N760
1N751
1N753
1N754
1N760
|
1N751
Abstract: 1n758 1N700
Text: Zener Diodes • 1N746A— 1N759A P =400m W Package : DO-35 Vz Part No. E3! Ranking lz Zz (n ) lz Ir ( a A) A (mA) Max. (mA) Max. Vr (V) f 1N746 3 .1 4 - 3 .4 7 20 28 20 10 1 r 1N747 3 .4 2 - 3 .7 8 20 24 20 10 1 T 1N748 3.71—4.10 20 23 20 10 1 4.09— 4.52
|
OCR Scan
|
PDF
|
1N746A--
1N759A
DO-35)
1N746
1N747
1N749
1N750
1N751
1N752
1N753
1n758
1N700
|
PL 15 Z
Abstract: z 5v1 9v1z PL33Z 180Z 5V6Z 100Z PL3V6Z PL18Z PL13Z
Text: zener diodes diodes zener THOMSON-CSF Types VZT#/'Z T rZ r/l2 T *ZT OCVZ •r / V r Vr ■ZM V (m A| 2 3,5 3,5 5 5 7 7 10 10 10 10 12 12 14 14 17 17 20 20 24 24 28 28 34 34 41 41 50 50 60 60 75 75 90 90 320 290 280 250 215 200 190 170 155 140 130 120 105
|
OCR Scan
|
PDF
|
Tamb25Â
CB-210)
PL 15 Z
z 5v1
9v1z
PL33Z
180Z
5V6Z
100Z
PL3V6Z
PL18Z
PL13Z
|
Untitled
Abstract: No abstract text available
Text: s e MIKRO n V rsm Rectifier Diodes Ifav sin. 180; Tease — 7 5 °C V rrm V 1550 A 400 SKN 1500/04 SKN 1500 SKN 2000 2 00 0 A SKN 2000/06 600 1200 SKN 1500/12 SKN 2000/12 1600 SKN 1500/16 SKN 2000/16 2 000 SKN 2000/20 2400 SKN 1500/20 SKN 1500/24 2 900
|
OCR Scan
|
PDF
|
B8-35
013bb71
0GDb334
|
