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    24 SMD TRANSISTOR Search Results

    24 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    24 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IF VIDEO DEMODULATOR

    Abstract: television video section block diagram A5112 capacitor 1-35 L V6 SMD transistor package code V12 audio limiter ic b14 smd diode SMD package code V12 smd transistor n19 tda audio amplifier
    Text: Video and Sound IF with FM-PLL Demodulator, AFC and V & S SCART TDA 5950X Bipolar IC Features ● ● ● ● Features video and sound IF Video and sound SCART AFC NTSC option P-DSO-24-1 Type Ordering Code Package TDA 5950X Q67000-A5112 P-DSO-24-1 SMD TDA 5950X


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    5950X P-DSO-24-1 Q67000-A5112 Q67007-A5112 P-DSO-24-1 IF VIDEO DEMODULATOR television video section block diagram A5112 capacitor 1-35 L V6 SMD transistor package code V12 audio limiter ic b14 smd diode SMD package code V12 smd transistor n19 tda audio amplifier PDF

    2N7002 NXP MARKING

    Abstract: ON5520 fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code 2N7002 smd TRANSISTOR code marking 05 sot23
    Text: ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


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    ON5520 O-236AB) 2N7002 ON5520 2N7002 NXP MARKING fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code smd TRANSISTOR code marking 05 sot23 PDF

    marking code E5 SMD ic

    Abstract: smd transistor marking e5 TRANSISTOR SMD CODE PACKAGE SOT363 marking code e5 sot363 MARKING CODE E5 NXP BC846BPN E5 SMD Transistor TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC
    Text: BC846BS 65 V, 100 mA NPN/NPN general-purpose transistor Rev. 01 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device SMD plastic package. Table 1.


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    BC846BS OT363 SC-88 BC856BS BC846BPN AEC-Q101 BC846BS marking code E5 SMD ic smd transistor marking e5 TRANSISTOR SMD CODE PACKAGE SOT363 marking code e5 sot363 MARKING CODE E5 NXP BC846BPN E5 SMD Transistor TRANSISTOR SMD MARKING CODES transistor SMD MARKING CODE MARKING CODE SMD IC PDF

    Untitled

    Abstract: No abstract text available
    Text: BC846 series 65 V, 100 mA NPN general-purpose transistors Rev. 8 — 24 April 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1]


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    BC846 BC846 O-236AB BC856 BC846W OT323 SC-70 BC856W BC846T OT416 PDF

    MOSFET TRANSISTOR SMD MARKING CODE bh

    Abstract: No abstract text available
    Text: BCP55; BCX55; BC55PA 60 V, 1 A NPN medium power transistors Rev. 8 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


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    BCP55; BCX55; BC55PA BCP55 OT223 SC-73 BCP52 BCX55 SC-62 O-243 MOSFET TRANSISTOR SMD MARKING CODE bh PDF

    MARKING CODE SMD IC

    Abstract: smd code marking v8 sot23 MARKING SMD IC CODE smd marking code BC846 NXP BC856
    Text: BC846 series 65 V, 100 mA NPN general-purpose transistors Rev. 8 — 24 April 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1]


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    BC846 BC846W BC846T SC-70 SC-75 O-236AB BC856 BC856W BC856T MARKING CODE SMD IC smd code marking v8 sot23 MARKING SMD IC CODE smd marking code BC846 NXP BC856 PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


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    PMV30UN2 O-236AB) PDF

    PMV40UN2

    Abstract: No abstract text available
    Text: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


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    PMV40UN2 O-236AB) PMV40UN2 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


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    PMXB120EPE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


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    PMXB40UNE DFN1010D-3 OT1215) PDF

    PBLS2003D

    Abstract: MARKING SMD PNP TRANSISTOR F8
    Text: PBLS2003D 20 V PNP BISS loadswitch Rev. 01 — 24 June 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)


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    PBLS2003D OT457 SC-74) PBLS2003D MARKING SMD PNP TRANSISTOR F8 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


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    PMXB350UPE DFN1010D-3 OT1215) PDF

    PBLS2003S

    Abstract: mosfet so8 smd LS2003S LS2003
    Text: PBLS2003S 20 V PNP BISS loadswitch Rev. 02 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)


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    PBLS2003S OT96-1 PBLS2003S mosfet so8 smd LS2003S LS2003 PDF

    LS2001S

    Abstract: PBLS2001S MARKING SMD PNP TRANSISTOR FR
    Text: PBLS2001S 20 V PNP BISS loadswitch Rev. 02 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)


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    PBLS2001S OT96-1 PBLS2001S LS2001S MARKING SMD PNP TRANSISTOR FR PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


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    PMXB65ENE DFN1010D-3 OT1215) PDF

    PBSS4420D

    Abstract: PBSS5420D
    Text: PBSS4420D 20 V, 4 A NPN low VCEsat BISS transistor Rev. 02 — 24 September 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


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    PBSS4420D OT457 SC-74) PBSS5420D. PBSS4420D PBSS5420D PDF

    PBSS304ND

    Abstract: PBSS304PD tsop6 marking 312 TRANSISTOR SMD MARKING CODE AJ
    Text: PBSS304PD 80 V, 3 A PNP low VCEsat BISS transistor Rev. 02 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


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    PBSS304PD OT457 SC-74) PBSS304ND. PBSS304PD PBSS304ND tsop6 marking 312 TRANSISTOR SMD MARKING CODE AJ PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T2 23 PBHV9414Z 140 V, 4 A PNP high-voltage low VCEsat BISS transistor 24 January 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


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    PBHV9414Z OT223 SC-73) AEC-Q101 PDF

    PB9110

    Abstract: PBSS8110Z PBSS9110Z SC-73
    Text: PBSS9110Z 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 24 July 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


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    PBSS9110Z OT223 SC-73) PBSS8110Z. PBSS9110Z PB9110 PBSS8110Z SC-73 PDF

    PQMD12

    Abstract: No abstract text available
    Text: DF N1 10B -6 PQMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ 24 July 2013 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistors RET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.


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    PQMD12 DFN1010B-6 OT1216) AEC-Q101 PQMD12 PDF

    2 input and gate 24v

    Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode


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    2SK3575 O-263 2 input and gate 24v gate drive protection smd transistor 26 2SK3575 2SK35 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors MOSFET IC SMD Type Product specification 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode


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    2SK3404 O-263 PDF

    smd transistor nc 61

    Abstract: 2SK3424
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3424 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 15.25-0.2 Low gate charge 5.60 MAX. VGS = 10 V, ID = 24 A +0.2 8.7-0.2 RDS(on)1 = 1.5m Unit: mm


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    2SK3424 O-263 smd transistor nc 61 2SK3424 PDF

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan
    BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A PDF