mc75
Abstract: No abstract text available
Text: Technical Data Sheet MC13751/D Rev. 1, 10/2002 MC13751 Dual-Band Upmixer and Driver Amplifier Package Information Plastic Package Case 1307 QFN-24 Ordering Information Device Device Marking Package MC13751FC MC751 QFN-24 The MC13751 is an integrated transmit upmixer and driver amplifier designed for use in
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MC13751/D
MC13751
QFN-24)
MC13751FC
MC751
QFN-24
MC13751
QFN-24
mc75
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marking code 604 SOT23
Abstract: NPN transistors sot-23 26 Q62702-F1065 Q62702-F1066 Q62702-F976 Q62702-F977 IC ua 74
Text: NPN Silicon High-Voltage Transistors BFN 24 BFN 26 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 25, BFN 27 PNP ● Type Marking
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Q62702-F1065
Q62702-F976
OT-23
marking code 604 SOT23
NPN transistors sot-23 26
Q62702-F1065
Q62702-F1066
Q62702-F976
Q62702-F977
IC ua 74
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FLs marking code SOT23
Abstract: Q62702-F1066 Q62702-F977
Text: PNP Silicon High-Voltage Transistors BFN 25 BFN 27 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 24, BFN 26 NPN ● Type Marking
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Q62702-F1066
Q62702-F977
OT-23
FLs marking code SOT23
Q62702-F1066
Q62702-F977
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Q62702-F1065
Abstract: Q62702-F976
Text: NPN Silicon High-Voltage Transistors BFN 24 BFN 26 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 25, BFN 27 PNP ● Type Marking
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Q62702-F1065
Q62702-F976
OT-23
Q62702-F1065
Q62702-F976
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KLT23
Abstract: MC100ELT23
Text: MC100ELT23 5 V Dual Differential PECL to TTL Translator Description http://onsemi.com MARKING DIAGRAMS* 8 8 1 Features • • • • • • • 3.5 ns Typical Propagation Delay 24 mA TTL Outputs Flow Through Pinouts The 100 Series Contains Temperature Compensation
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MC100ELT23
KLT23
506AA
MC100ELT23
MC100ELT23/D
KLT23
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Untitled
Abstract: No abstract text available
Text: MC100ELT23 5 V Dual Differential PECL to TTL Translator Description http://onsemi.com MARKING DIAGRAMS* 8 8 1 Features • • • • • • • 3.5 ns Typical Propagation Delay 24 mA TTL Outputs Flow Through Pinouts The 100 Series Contains Temperature Compensation
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MC100ELT23
KLT23
506AA
MC100ELT23
MC100ELT23/D
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KLT23
Abstract: IC SOCKET soic8 MC100ELT23DR2 MC100ELT23 dimension SOIC8 package *3525* soic8 MC100ELT23DG
Text: MC100ELT23 5 V Dual Differential PECL to TTL Translator Description MARKING DIAGRAMS* 8 8 1 Features • • • • • • • • 3.5 ns Typical Propagation Delay 24 mA TTL Outputs Flow Through Pinouts The 100 Series Contains Temperature Compensation
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MC100ELT23
KLT23
506AA
MC100ELT23
KLT23
IC SOCKET soic8
MC100ELT23DR2
dimension SOIC8 package
*3525* soic8
MC100ELT23DG
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KLT23
Abstract: MC100ELT23
Text: MC100ELT23 5 V Dual Differential PECL to TTL Translator Description http://onsemi.com MARKING DIAGRAMS* 8 8 1 Features • • • • • • • • 3.5 ns Typical Propagation Delay 24 mA TTL Outputs Flow Through Pinouts The 100 Series Contains Temperature Compensation
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MC100ELT23
KLT23
506AA
MC100ELT23
MC100ELT23/D
KLT23
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ut 406 hall
Abstract: HAL800 can calibration protocol
Text: ADVANCE INFORMATION HAL800 Programmable Linear Hall Effect Sensor MICRONAS Edition Aug. 24, 1998 6251-441-1AI HAL 800 ADVANCE INFORMATION Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Major Applications Features Marking Code
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HAL800
6251-441-1AI
ut 406 hall
can calibration protocol
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KLT23
Abstract: marking code onsemi Z Diode MC100ELT23
Text: MC100ELT23 5 V Dual Differential PECL to TTL Translator Description http://onsemi.com MARKING DIAGRAMS* 8 8 1 Features • • • • • • • • 3.5 ns Typical Propagation Delay 24 mA TTL Outputs Flow Through Pinouts The 100 Series Contains Temperature Compensation
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MC100ELT23
KLT23
506AA
MC100ELT23
MC100ELT23/D
KLT23
marking code onsemi Z Diode
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107 hall effect sensor
Abstract: 115c hall 115E HAL115 HAL115UA-E IEC68-2-20 HALL Sensor TO92UA open drain in hall effect sensor
Text: MICRONAS INTERMETALL HAL115 Hall Effect Sensor IC MICRONAS Edition May 7, 1997 6251-414-1DS HAL115 Hall Effect Sensor IC in CMOS technology Marking Code Type Temperature Range Features: E C – operates from 4.3 to 24 V supply voltage with reverse voltage protection
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HAL115
6251-414-1DS
115UA
107 hall effect sensor
115c hall
115E
HAL115
HAL115UA-E
IEC68-2-20
HALL Sensor TO92UA
open drain in hall effect sensor
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115c hall
Abstract: brushless dc motor speed control Hall 115C HAL115UA-E Hall-Effect-Sensor 115C 115E HAL115 IEC68-2-20 107 hall effect sensor
Text: MICRONAS INTERMETALL HAL115 Hall Effect Sensor IC MICRONAS Edition May 7, 1997 6251-414-1DS HAL115 Hall Effect Sensor IC in CMOS technology Marking Code Type Temperature Range Features: E C – operates from 4.3 to 24 V supply voltage with reverse voltage protection
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HAL115
6251-414-1DS
115UA
115c hall
brushless dc motor speed control Hall 115C
HAL115UA-E
Hall-Effect-Sensor 115C
115E
HAL115
IEC68-2-20
107 hall effect sensor
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Untitled
Abstract: No abstract text available
Text: MC100ELT23 5 V Dual Differential PECL to TTL Translator Description http://onsemi.com MARKING DIAGRAMS* 8 8 1 Features • • • • • • • • 3.5 ns Typical Propagation Delay 24 mA TTL Outputs Flow Through Pinouts The 100 Series Contains Temperature Compensation
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MC100ELT23
ELT23
506AA
MC100ELT23/D
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION HAL114 Hall Effect Sensor IC MICRONAS Edition May 5, 1997 6251-456-1AI HAL114 Hall Effect Sensor IC in CMOS technology Features: ADVANCE INFORMATION Marking Code Type Temperature Range A E C 114A 114E 114C – operates from 4.5 V to 24 V supply voltage
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HAL114
6251-456-1AI
HAL114S
HAL114UA
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Marking Codes
Abstract: No abstract text available
Text: PowerMOS Transistors CONTENTS Page PREFACE INDEX 3 5 SELECTION GUIDE 11 MARKING CODES GENERAL 24 31 POWERMOS TRANSISTORS "Understanding the data sheet" 39 DEVICE DATA in alphanumeric sequence 47 PACKAGE OUTLINES 1869 LEADFORM OPTIONS MOUNTING AND SOLDERING
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SL 100 NPN Transistor base emitter collector
Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
Text: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code |E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,
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2SD2114K
SC-59)
2SD2114K;
12rves
2SD2114K
SL 100 NPN Transistor base emitter collector
SL 100 NPN Transistor
BF 273 transistor
transistor bf 274
BF 274 transistor
2SD2114
transistor CR NPN
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Untitled
Abstract: No abstract text available
Text: BFN 25 BFN27 PNP Silicon High-Voltage Transistors • • • • Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-em itter saturation voltage Complementary types: BFN 24, BFN 26 NPN Type Marking
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BFN27
Q62702-F749
Q62702-F751
Q62702-F1066
Q62702-F977
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TRANSISTOR BC 252
Abstract: BC transistor series
Text: 2SD1781K Transistor, NPN Features Dimensions Units : mm • • available in SMT3 (SMT, SC-59) package package marking: 2SD1781K; AF-*, where ★ is hFE code 2SD1781K (SMT3) 0.96 0.96 24 • extremely low collector saturation voltage • even though it is in a small package,
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2SD1781K
SC-59)
2SD1781K;
2SD1781K
TRANSISTOR BC 252
BC transistor series
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Magnetic Field Sensor FLC 100
Abstract: transistor ITT
Text: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection
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HAL628,
HAL638
628UA,
HAL628S
HAL638UA,
HAL638S
170ch
Magnetic Field Sensor FLC 100
transistor ITT
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HAL628
Abstract: 004-G intermetall 638UA
Text: HAL628, HAL638 Hall Effect Sensor 1C in CMOS technology ADVANCE INFORMATION Marking Code Temperature Range Type Common Features: - switching offset compensation - operates from 4.5 V to 24 V supply voltage HAL 628UA, HAL628S - overvoltage and reverse-voltage protection
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HAL628,
HAL638
628UA,
HAL628S
638UA,
HAL638S
4083ion
HAL628
004-G
intermetall
638UA
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION HAL 800 Programmable Linear Hall Effect Sensor r MICRO NAS Edition Aug. 24, 1998 6251-441-1 Al INTERMETALL HAL 800 ADVANCE INFORMATION Contents Page Section Title 3 3 1. 1.1. Introduction Major Applications 3 1.2. Features 4 1.3. Marking Code
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itt ol 170
Abstract: No abstract text available
Text: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch
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HAL114
HAL114S
HAL114UA
4bfiZ711
itt ol 170
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OTC114EKA
Abstract: otc114
Text: Digital transistor, NPN, with 2 resistors D T C 1 1 4 E E D T C 1 1 4 E U A D T C 1 1 4 E K A Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages package marking: DTC114EE, DTC114EKA, and DTC114EUA; 24
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SC-70)
SC-59)
DTC114EE,
DTC114EKA,
DTC114EUA;
DTC114EE
DTC114EUA,
DTC114EKA
DTC114EE
OTC114EKA
otc114
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115c hall
Abstract: to92ua HALL Sensor TO92UA Transistor 115e 107 hall effect sensor
Text: ♦ MICRONAS S ï ï S ’997 INTERMETALL HAL115 Hall Effect Sensor IC in CMOS technology Marking Code Temperatiire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA 115E 115C - operates with magnetic fields from DC to 20 kHz
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HAL115
115c hall
to92ua
HALL Sensor TO92UA
Transistor 115e
107 hall effect sensor
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