qpsk modulation transmitter ghz
Abstract: rf module with qpsk modulation 23GHz transceiver microwave radio transmitter MSRX-1823 XP1013-BD XR1006-BD XU1002-BD ghz hybrid coupler waveguide Transceiver 20 GHz
Text: Application of the 18/23 GHz Transceiver Modules The 18/23GHz Transceiver Transmitter/Receiver pair has been designed specifically for use in saturated or linear point-topoint microwave radios operating in the 18 GHz and 23 GHz ETSI band plans. The design is well suited for PDH radios
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18/23GHz
QPSK/16QAM
WR-42
qpsk modulation transmitter ghz
rf module with qpsk modulation
23GHz transceiver
microwave radio transmitter
MSRX-1823
XP1013-BD
XR1006-BD
XU1002-BD
ghz hybrid coupler waveguide
Transceiver 20 GHz
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JXWBLB-T-BP-25000-2000-6CK
Abstract: No abstract text available
Text: JXWBLB-T-BP-25000-2000-6CK 25000MHz Cavity Band Pass Filter TEST REPORT For JXWBLB-T-BP-25000-2000-6CK 1 JXWBLB-T-BP-25000-2000-6CK 25000MHz Cavity Band Pass Filter Technical Specification 24.0-26.0 Frequency Range GHz 3 max Insertion Loss(dB) 30 min@23GHz
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JXWBLB-T-BP-25000-2000-6CK
25000MHz
23GHz
27GHz
25GHz
24GHz
26GHz
JXWBLB-T-BP-25000-2000-6CK
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Untitled
Abstract: No abstract text available
Text: CHA3063 RoHS COMPLIANT 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process.
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CHA3063
5-23GHz
CHA3063
dBS21
5-23GHz
21dBm
dBS11
DSCHA3063-8144
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OC-768
Abstract: TGA4801 TGA4803 DC TO 20GHZ RF AMPLIFIER MMIC
Text: Advance Product Information May 21, 2007 DC-35GHz MPA with AGC TGA4801 OC-768 43Gb/s NRZ Lithium Niobate Modulator Driver Key Features and Performance • • • • • • • • 0.25um pHEMT Technology DC - 23GHz Linear BW DC - 35GHz Saturated Power BW
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DC-35GHz
TGA4801
OC-768
43Gb/s
23GHz
35GHz
TGA4801
24dBm
20GHz.
TGA4803
DC TO 20GHZ RF AMPLIFIER MMIC
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CHA3063
Abstract: No abstract text available
Text: CHA3063 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounds.This helps simplify the assembly process. The circuit is manufactured with a PMHEMT process : 0.25µm gate length, via
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CHA3063
5-23GHz
CHA3063
dBS21
5-23GHz
21dBm
dBS11
dBS22
DSCHA30632263
-20-Sept
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CHA3063
Abstract: No abstract text available
Text: CHA3063 RoHS COMPLIANT 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process.
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CHA3063
5-23GHz
CHA3063
dBS21
5-23GHz
21dBm
dBS11
dBS22
DSCHA3063-8144
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PDF
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CHA3063
Abstract: No abstract text available
Text: CHA3063 RoHS COMPLIANT 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process.
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CHA3063
5-23GHz
CHA3063
dBS21
5-23GHz
21dBm
dBS11
dBS22
-24nted
DSCHA3063-8144
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TGA4801
Abstract: TGA4803 43Gb
Text: TGA4801 DC – 35 GHz MPA with AGC Key Features and Performance • • • • • • • • 0.25um pHEMT Technology DC - 23GHz Linear BW DC - 35GHz Saturated Power BW 14dB Small Signal Gain 10ps Edge Rates 20/80 7Vpp 43Gb/s NRZ PRBS Amplitude and Symmetry Control
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TGA4801
23GHz
35GHz
43Gb/s
TGA4801
24dBm
20GHz.
25GHz
35GHz.
0007-inch
TGA4803
43Gb
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TGA1135B
Abstract: pin diode 23GHz
Text: Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier TGA1135B Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA
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TGA1135B
23GHz
38dBm
TGA1135B
V/540mA
0007-inch
pin diode 23GHz
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CHA3063
Abstract: No abstract text available
Text: CHA3063 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounds.This helps simplify the assembly process. The circuit is manufactured with a PMHEMT process : 0.25µm gate length, via
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CHA3063
5-23GHz
CHA3063
dBS21
5-23GHz
21dBm
dBS11
dBS22
DSCHA30633273
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1092-01A-5
Abstract: No abstract text available
Text: TGA2521-SM 17-24 GHz Linear Driver Amplifier Key Features • • • • • • Frequency Range: 17-24 GHz 25.5 dBm Nominal Psat, 23.5 dBm Nominal P1dB Gain: 20 dB OTOI: 33 dBm Typical Bias: Vd = 5 V, Idq = 320 mA, Vg = -0.5 V Typical Package Dimensions: 4 x 4 x 0.85 mm
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TGA2521-SM
TGA2521-SM
TGA2521-SM,
1092-01A-5
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Untitled
Abstract: No abstract text available
Text: K-Band Packaged Power Amplifier TGA4525-SM Key Features and Performance • • • • • • 17GHz - 27GHz Bandwidth 22 dB Typical Gain 37 dBm Typical OTOI 29 dBm Typical P1dB Vd = 7V, Id = 760mA Id = 830mA @ P1dB Package Dimensions: 5.0 x 5.0 x 1.10 mm
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TGA4525-SM
17GHz
27GHz
760mA
830mA
TGA4525-SM
29dBm
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Bond
Abstract: power amplifier mmic
Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four
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FMM5829X
39dBm
FMM5829X
Bond
power amplifier mmic
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power amplifier mmic
Abstract: No abstract text available
Text: RMWP23001 21-24 GHz Power Amplifier MMIC PRODUCT INFORMATION Description Features The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction
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RMWP23001
RMWP23001
power amplifier mmic
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Bach
Abstract: Eudyna Devices X BAND power amplifiers power amplifier 800mA ED-4701 FMM5829X UF 600m power amplifier mmic
Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four
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FMM5829X
39dBm
FMM5829X
1906B,
Bach
Eudyna Devices X BAND power amplifiers
power amplifier 800mA
ED-4701
UF 600m
power amplifier mmic
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A2069
Abstract: AN0017 CHA2069-QDG MO-220
Text: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets.
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CHA2069-QDG
18-30GHz
CHA2069-QDG
A2069
18-30GHz
20dBm
DSCHA2069QDG9322-
A2069
AN0017
MO-220
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Untitled
Abstract: No abstract text available
Text: Operating and Service Manual Agilent 346A/B/C Noise Source Including Options 001, 002, and 004 Serial Numbers Instruments with serial prefixes 4124A and above are supplied with the noise source ENR data preloaded on diskette -see Chapters 3 & 4. Manufacturing Part Number: 00346-90148
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46A/B/C
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Untitled
Abstract: No abstract text available
Text: Product Selection Guide Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB Cellular Infrastructure GSM, GPRS, CDMA, TD-SCDMA,
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OC-48
SG-1213
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microwave transceiver specification
Abstract: WG22 microwave transceiver microwave transceiver specification 10 GHz Racal-MESL
Text: Racal-MESL Data Sheet 38 GHz Millimetrewave Transceiver APPLICATIONS • Point-to-Point wireless communications • Point-to-Multi Point Radio Links BUILDING BLOCKS • MMICs for LNA, PA and mixer functions • Modular PTFE substrate design • Low cost, high performance construction
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WR28/WG22
microwave transceiver specification
WG22
microwave transceiver
microwave transceiver specification 10 GHz
Racal-MESL
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2-way mechanical tuning power divider at 15 ghz
Abstract: KDI 64537 Mixer MMIC ku-band phase shifter x-band waveguide isolators ga 1 13001 x-band MICROSTRIP isolators airborne fire control 5Ghz phase shifter D SUB connector ITT Cannon UHF Phase Shifter
Text: RF / Microwave Components Subsystems Subassemblies Product Overview KDI-Integrated Products Few manufacturers of RF and microwave components and subsystems offer the depth and breadth of technical expertise as Aeroflex/KDI-Integrated Products. Since its inception more than 30
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 1/2 R222.705.400 ADAPTOR FEMALE - FEMALE SEALED Series : SMP - All dimensions are in mm. . pn . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS - PLATING µm MATERIALS BERYLLIUM COPPER BERYLLIUM COPPER PTFE
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23GHz
MIL-STD-348
12GHz:
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1092-01A-5
Abstract: mmic power 17-24 ghz TGA2521-SM
Text: TGA2521-SM 17-24 GHz Linear Driver Amplifier Key Features • • • • • • Frequency Range: 17-24 GHz 25.5 dBm Nominal Psat, 23.5 dBm Nominal P1dB Gain: 20 dB OTOI: 33 dBm Typical Bias: Vd = 5 V, Idq = 320 mA, Vg = -0.5 V Typical Package Dimensions: 4 x 4 x 0.85 mm
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TGA2521-SM
TGA2521-SM
TGA2521-SM,
1092-01A-5
mmic power 17-24 ghz
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TGA4525-SM
Abstract: No abstract text available
Text: K-Band Packaged Power Amplifier TGA4525-SM Key Features and Performance • • • • • • 17GHz - 27GHz Bandwidth 22 dB Typical Gain 37 dBm Typical OTOI 29 dBm Typical P1dB Vd = 7V, Id = 760mA Id = 830mA @ P1dB Package Dimensions: 5.0 x 5.0 x 1.10 mm
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TGA4525-SM
17GHz
27GHz
760mA
830mA
TGA4525-SM
29dBm
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SPF-2298
Abstract: SPF-2076
Text: SPF-2076, -2098, -2298 1-23GHz Medium Power PHEMT G aAs FET October, 1995 76 Package Features • High Gain: 18dB @ 2GHz, 8dB @ 18GHz - +24dBm Output Power - Low Harmonic Distortion - 50% Power Added Efficiency - 1.0dB Noise Figure @ 18GHz 1.04 <0.04f 0.10
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SPF-2076,
1-23GHz
18GHz
24dBm
18GHz
24dBrn
100mA.
100mW
SPF-2298
SPF-2076
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