Untitled
Abstract: No abstract text available
Text: F L M 3742-121 A Internally Matched Pow er ìaAs I l l s ABSOLUTE MAXIMUM RATING (Am bient Tem perature Ta=25°C) ta n t Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 57.5 w °c °c Channel Temperature —1 (/> StmiafftTemperature
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31dEim
29dE3m
25dBm
23dE3m
27dBm
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FLM3742-12D
Abstract: FLM3742-12DA
Text: F,?T<.,. FLM3742-12DA 9 r UJ11jU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 41 dBm Typ. • • • • • • High Gain: G-|dB = 11 -5clB (Typ) High PAE: riadd = 37% (Typ.) Low IM3 = -45dBc@Po =30dBm Broad Band: 3.7 ~ 4.2GHz
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FLM3742-12DA
41dBm
-45dBc
30dBm
FLM3742-12DA
FLM3742-12D
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FLM3742-12DA
Abstract: No abstract text available
Text: n FLM3742-12DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G-j^B = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -45dBc@Po =30dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q
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FLM3742-12DA
-45dBc
30dBm
FLM3742-12DA
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