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    23AUG06 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    RB501V-40

    Abstract: No abstract text available
    Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB501V-40 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current


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    23-Aug-06 RB501V-40 255E-07 232E-11 000E-05 656E-09 RB501V-40 PDF

    446 DIODE

    Abstract: RB548W
    Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB548W No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI


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    23-Aug-06 RB548W 810E-08 52E-11 000E-06 378E-09 446 DIODE RB548W PDF

    ELMOS

    Abstract: TCND3000
    Text: TCND3000 Vishay Semiconductors Reflective Sensor for Touchless Switch Description TCND3000 is a reflective optical sensor for applications using the HALIOS High Ambient Light Independent Optical System principle. It consists of an infrared emitter and a photodetector forming the optical sensing path. According to the HALIOS principle a


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    TCND3000 TCND3000 18-Jul-08 ELMOS PDF

    UP 5035 LCD METER

    Abstract: cny70 heart pulse rate sensor phototransistor MTBF IEC-60050 Photodiode Arrays MTBF Zener diode smd marking e4 block diagram of cath lab dual Phototransistor mouse TCND5000 TCRT1000
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book optical sensors vishay vse-db0087-0610 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    vse-db0087-0610 UP 5035 LCD METER cny70 heart pulse rate sensor phototransistor MTBF IEC-60050 Photodiode Arrays MTBF Zener diode smd marking e4 block diagram of cath lab dual Phototransistor mouse TCND5000 TCRT1000 PDF

    RB050L SPICE

    Abstract: RB050L-40
    Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB050L-40 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current


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    23-Aug-06 RB050L-40 273E-06 482E-10 000E-04 294E-08 RB050L SPICE RB050L-40 PDF

    RB520S-30

    Abstract: No abstract text available
    Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB520S-30 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current


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    23-Aug-06 RB520S-30 684E-08 883E-11 000E-06 656E-09 RB520S-30 PDF

    VO1263AAC

    Abstract: VO1263AACTR VO1263AB VDE0884 VO1263
    Text: VO1263AAC/AACTR/AB Vishay Semiconductors Dual Photovoltaic MOSFET Driver Solid State Relay Features • High Open Circuit Voltage, up to 14.6 V Pb-free typical • High Short Circuit Current, up to 42 µA e3 typical • Isolation Test Voltage 5300 VRMS RoHS


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    VO1263AAC/AACTR/AB 2002/95/EC 2002/96/EC i179020 UL1577, E52744 VDE0884) E52744, 08-Apr-05 VO1263AAC VO1263AACTR VO1263AB VDE0884 VO1263 PDF

    208-mils

    Abstract: EDR-7320 CAT24C64 MD-1102 soik8
    Text: CAT24C64 64-Kb I2C CMOS Serial EEPROM FEATURES DEVICE DESCRIPTION • Supports Standard and Fast I2C Protocol The CAT24C64 is a 64-Kb CMOS Serial EEPROM devices, internally organized as 8192 words of 8 bits each. ■ 1.8 V to 5.5 V Supply Voltage Range ■ 32-Byte Page Write Buffer 1


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    CAT24C64 64-Kb CAT24C64 32-byte MD-1102 208-mils EDR-7320 soik8 PDF

    208-mils

    Abstract: 208mils CAT24C64 soik8 CAT24C64YI-GT3
    Text: CAT24C64 64-Kb I2C CMOS Serial EEPROM FEATURES DEVICE DESCRIPTION • Supports Standard and Fast I2C Protocol The CAT24C64 is a 64-Kb CMOS Serial EEPROM devices, internally organized as 8192 words of 8 bits each. ■ 1.8 V to 5.5 V Supply Voltage Range ■ 32-Byte Page Write Buffer 1


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    CAT24C64 64-Kb 32-Byte CAT24C64 MD-1102, 208-mils 208mils soik8 CAT24C64YI-GT3 PDF

    rb55

    Abstract: RB558W
    Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB558W No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current XTI


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    23-Aug-06 RB558W 786E-07 621E-11 000E-05 656E-09 rb55 RB558W PDF

    RB521G-30

    Abstract: No abstract text available
    Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB521G-30 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current


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    23-Aug-06 RB521G-30 816E-07 641E-11 000E-05 656E-09 RB521G-30 PDF

    RB500V-40

    Abstract: No abstract text available
    Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB500V-40 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current


    Original
    23-Aug-06 RB500V-40 557E-08 912E-11 000E-06 656E-09 RB500V-40 PDF

    M 23097

    Abstract: 23097 RB520G-30
    Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB520G-30 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current


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    23-Aug-06 RB520G-30 817E-08 53E-11 000E-06 378E-09 M 23097 23097 RB520G-30 PDF

    elmos

    Abstract: E90901 TCND3000 ELMOS 100 Elmos Semiconductor AG
    Text: TCND3000 Vishay Semiconductors Reflective Sensor for Touchless Switch Description TCND3000 is a reflective optical sensor for applications using the HALIOS High Ambient Light Independent Optical System principle. It consists of an infrared emitter and a photodetector forming the optical sensing path. According to the HALIOS principle a


    Original
    TCND3000 TCND3000 08-Apr-05 elmos E90901 ELMOS 100 Elmos Semiconductor AG PDF

    RB521S-30

    Abstract: No abstract text available
    Text: REFERENCE 23-Aug-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB521S-30 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current


    Original
    23-Aug-06 RB521S-30 019E-06 081E-11 000E-04 656E-09 RB521S-30 PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. 4R3 VW COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 3 2 - ALL RIGHTS RESERVED. LOC DIST GP 00 R E V IS IO N S P LTR DESCRIPTION E R E V IS E D PER DATE DWN JDP SLB 23AUG06 EC O -06-010377 APVD D


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    23AUG06 31MAR2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION AUGUST ,2006- LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. E DIST R E V IS IO N S B LTR NOTES: A A A A 5 B PACK IN ACCORDANCE WITH AMP SPEC DATE ECR —06 —01 8891 DWN 23AUG06


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    23AUG06 23AUG06 58C/U URM43, 31MAR2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 2 3 RELEASED FOR PUBLICATION AUGUST ,2006- LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. E REVISIONS DIST B P NOTES: D PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275


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    23AUG06 RG58C/U, 41A/U, URM45, 31MAR2000 U478224 PDF

    kx13

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION AUGUST ,2006- BY TYCO ELECTRONICS CORPORATION. E DIST R E V IS IO N S B LTR 0 21.0 0 NOTES: A A LOC ALL RIGHTS RESERVED. PACK IN ACCORDANCE WITH AMP SPEC Ag A THIS ITEM MUST BE WHITE B DATE


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    23AUG06 23AUG06 31MAR2000 kx13 PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION AUGUST ,2006- LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST E B R E V IS IO N S LTR B NOTES: /\ PACK / K 1 0 0 TRAY A\ Ag A\ TH IS 5 6 7 IN AC CO RDANCE WITH AM P PACK SPEC


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    23AUG06 23AUG06 31MAR2000 PDF

    Brad Harrison

    Abstract: BZE6-2RN-R BZ-2RQ77 IPR19699
    Text: CATALOG MICRO SWITCH SWITCH - a Honeywell Division FED. MFG. CODE L I S T I NG BZE6-2RN-R ENCLOSED 91929 QL I z cr 4X SEAL RING c\i I 2X 6 - 3 2 UNC HEX NUT / T \ CD Ld \ 2X 6 - 3 2 UNC X 1.750 ROUND HEAD MACHINE S C R E W /T \ Kl 32 UNC X (.312) FLAT HEAD SELF LOCKING SCREW


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    IPR19699 7179A 001705T| 22NOVQ5 23AUG06 BZ-2RQ77 A-125, 240Vac 5M-1982 Brad Harrison BZE6-2RN-R BZ-2RQ77 PDF

    7717

    Abstract: No abstract text available
    Text: MICRO SWITCH F R E E P O R T . IL L IN O IS . U S. A A D IV IS IO N O F FED. M FS . HONEYW ELL c a t a l o g l is t in g BZE6-RNX1 SWITCH - ENCLOSED CODE l l | | ir I to ÜJ M CD SEAL RING FLAT WASHER (4 ELASTOMER PLUNGER SEAL SECURED TO COMPONENTS BY EXTERNAL BANDING(2V


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    C053I9I-G C055989 EIC0726I8 23NOVQ5 23AUG06 270CTQ6 29AUG07 BZ-RQXI67 5A-125, HP-125 7717 PDF

    Untitled

    Abstract: No abstract text available
    Text: CATALOG MCRO SWITCH SWITCH - ENCLOSED a Honeywell Division FED. MFG . CODE L IS T IN G BZE6-2R N -C 9192» 1 z a : 4X SEAL RING CN I 2X 6 - 3 2 UNC HEX N U T / 1 \ CD LU A 6 - 3 2 UNC X .312 FLAT HEAD SELF LOCKING SCREW 2X 6 - 3 2 UNC X (1.750) ROUND HEAD MACHINE S C R E W /T \


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    oQ17057 23AUG06 300CT06 DD33014 29AUG07 04CK030 240Vac PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. AUGUST ,2006- E PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 B P LTR DESCRIPTION B DATE ECR —06 —018891


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    23AUG06 URM91, 31MAR2000 PDF