NA-1335
Abstract: 42-pin D GM23C8100A
Text: 23C8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1M x 8/512K x 16 BIT CMOS MASK ROM Description Pin Configuration The GM 23C8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)
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GM23C8100A
GM23C8100A
8/512K
402A757
NA-1335
42-pin D
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Untitled
Abstract: No abstract text available
Text: W» LG Semicon. Co. LTD Description Pin Configuration The 23C8100A high performance read only memory is organized as 1,048,576 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The 23C8100A offers automatic power down controlled by
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GM23C8100A
wjA15
402fl757
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23C8001A
Abstract: 23C8001 KM23C2001 2001h 23c4001
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28
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32000G
32000FP.
23C32100G
32100FP
23C8001A
23C8001
KM23C2001
2001h
23c4001
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Untitled
Abstract: No abstract text available
Text: 23C8100A LG Semicon Co.,Ltd. IM x 8 / 512K x 16 B IT C M O S M A SK R O M Pin Configuration Description The G M 28C 8100A high perform ance read only m em ory is organized as 1,048,576 x 8 bit Byte M ode o r as 524,288 x 16 bit (W ord M ode) follow ed by B H E m ode select. The
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GM23C8100A
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Untitled
Abstract: No abstract text available
Text: 23C8100AFP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w o rd m o d e ) • F a s t a c c e s s tim e : 150 n s im a x ) • S u p p ly v o lta g e : s in g le *t-5V
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KM23C8100AFP1
23C8100AFP1
B100AFP1-20
KM23C8100AFH-25
KM23C8100AFP1)
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