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    2383 TRANSISTOR Search Results

    2383 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2383 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : Tf =120MHz E C 1 6 2 5 3 4 C B C SuperSOT TM C -6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted


    Original     		PDF FMBS2383 120MHz

    QS 100 NPN Transistor

    Abstract: No abstract text available
    Text: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : fT=120MHz E C 1 6 2 5 3 4 C B C C SuperSOTTM-6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted


    Original     		PDF FMBS2383 120MHz QS 100 NPN Transistor

    MAX9320B

    Abstract: MAX9320BESA MAX9320BEUA MC10EP11D
    Text: 19-2383; Rev 0; 4/02 1:2 Differential PECL/ECL/LVPECL/LVECL Clock and Data Driver Features ♦ Improved Second Source of the MC10EP11D ♦ +3.0V to +5.5V Differential PECL/LVPECL Operation ♦ -3.0V to -5.5V ECL/LVECL Operation ♦ Low 22mA Supply Current


    Original     		PDF MC10EP11D 208ps 300mV MAX9320BESA MAX9320BEUA* MAX9320B MAX9320B MAX9320BESA MAX9320BEUA MC10EP11D

    Untitled

    Abstract: No abstract text available
    Text: 19-2383; Rev 1; 11/03 1:2 Differential PECL/ECL/LVPECL/LVECL Clock and Data Driver Features ♦ Improved Second Source of the MC10EP11D ♦ +3.0V to +5.5V Differential PECL/LVPECL Operation ♦ -3.0V to -5.5V ECL/LVECL Operation ♦ Low 22mA Supply Current


    Original     		PDF MC10EP11D 208ps 300mV MAX9320B MAX9320BEUA MAX9320BESA MAX9320B

    MAX9320B

    Abstract: MAX9320BESA MAX9320BEUA MC10EP11D
    Text: 19-2383; Rev 1; 11/03 1:2 Differential PECL/ECL/LVPECL/LVECL Clock and Data Driver Features ♦ Improved Second Source of the MC10EP11D ♦ +3.0V to +5.5V Differential PECL/LVPECL Operation ♦ -3.0V to -5.5V ECL/LVECL Operation ♦ Low 22mA Supply Current


    Original     		PDF MC10EP11D 208ps 300mV MAX9320BEUA MAX9320BESA MAX9320B MAX9320B MAX9320BESA MAX9320BEUA MC10EP11D

    2SC2383

    Abstract: 2SC2383 equivalent
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 2383 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C080BJ-01 芯片厚度：240±20µm 管芯尺寸：800x800µm 2 焊位尺寸：B 极 124×124µm 2；E 极 221×110µm 2


    Original     		PDF 100mm C080BJ-01 2SC2383 O-92L 900mW 10mAIB 150VIE 2SC2383 2SC2383 equivalent

    tv vertical ic circuit list

    Abstract: transistor marking code y3 transistor MARKING CODE tv 2383 transistor
    Text: FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 2 3 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted


    Original     		PDF FJC2383 FJC2383 OT-89 OT-89-3 FJC2383OTF FJC2383YTF tv vertical ic circuit list transistor marking code y3 transistor MARKING CODE tv 2383 transistor

    MAX1818EUT

    Abstract: TOP CODE ABZH Dual N-Channel SOT-6 MOSFET max1818eut25 top mark ABZH sot23 abzk ABZH
    Text: 19-1860; Rev 2; 6/08 500mA Low-Dropout Linear Regulator in SOT23 Features ♦ Guaranteed 500mA Output Current ♦ Low 120mV Dropout at 500mA ♦ ±1% Output Voltage Accuracy Preset at 1.5V, 1.8V, 2.0V, 2.5V, 3.3V, 5V Adjustable from 1.25V to 5.0V ♦ Power OK Output


    Original     		PDF 500mA MAX1818 120mV mvp/id/2383/t/or/pt/MAX1818 17-May-2012 MAX1818EUT TOP CODE ABZH Dual N-Channel SOT-6 MOSFET max1818eut25 top mark ABZH sot23 abzk ABZH

    Untitled

    Abstract: No abstract text available
    Text: FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 2 3 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted


    Original     		PDF FJC2383 OT-89 FJC2383

    FJC2383

    Abstract: No abstract text available
    Text: FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 2 3 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted


    Original     		PDF FJC2383 OT-89 FJC2383

    kta1013

    Abstract: TIC 160 VCEO160V
    Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTC 2383 U nit in m m ) . • Color T V jV ERT. D e f le c tio n O utput. ■ Color T V C l a s s B S o u n d O utput. ( FEATURES ) • High V o lta g e ! V ceo^ ^ O V • L a r g e C o n tin u o u s C o l l e c t o r C u r r e n t C a pability.


    OCR Scan     		PDF VCEO-160V KTA1013 Ta-25Â 500mA, 200mA 92MOD kta1013 TIC 160 VCEO160V

    "High Speed Switch"

    Abstract: TE 2383
    Text: POWER MOS FIELD EFFECT TRANSISTORS Style Dlag. Numbar Drain to Sourca Breakdown Voltaga Volta BVdss V ( O t f) b Vqss •o rD8(0") Cm gfs Pd N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High


    OCR Scan     		PDF TCs25 NT1300 T0220 150ns, 350ns, 110ns, "High Speed Switch" TE 2383

    “RCA H 541”

    Abstract: No abstract text available
    Text: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE IN TER SIL C D 54/74FC T540, CD54/74FCT540AT C D 54/74FC T541, CD54/74FCT541 AT July 1990 Octal Buffers/Line Drivers, 3-S tate CD54/74FCT540, CD54/74FCT540AT - Inverting CD54/74FCT541, CD54/74FCT541 AT - Non-Inverting


    OCR Scan     		PDF 54/74FC CD54/74FCT540AT CD54/74FCT541 CD54/74FCT540, CD54/74FCT540AT CD54/74FCT541, FCT540, FCT541) “RCA H 541”

    74fct541a

    Abstract: 74fct541 T541 CD54FCT540 RCA H 541 “RCA H 541”
    Text: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTER SIL C D 54/74FC T540, C D 54/74FCT540AT C D 54/74FC T541, CD54/74FCT541 AT July 1990 Octal Buffers/Line Drivers, 3-S tate CD54/74FCT540, CD54/74FCT540AT - Inverting CD54/74FCT541, CD54/74FCT541 AT - Non-Inverting


    OCR Scan     		PDF 54/74FC 54/74FCT540AT CD54/74FCT541 CD54/74FCT540, CD54/74FCT540AT CD54/74FCT541, FCT540, FCT541) 74fct541a 74fct541 T541 CD54FCT540 RCA H 541 “RCA H 541”

    NTE2382

    Abstract: No abstract text available
    Text: POWER MOS FIELD EFFECT TRANSISTORS NTE Type Number Description 66 N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL


    OCR Scan     		PDF T0220 150ns, 350ns, 110ns, 160ns NTE2382

    2sk type

    Abstract: 2SK+series
    Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) 1Y h I ton (max.)


    OCR Scan     		PDF O-220E O-220F 2SK1331 bT32fl52 2sk type 2SK+series

    bd799

    Abstract: bd800
    Text: Power Transistors File Number 1242 HARR IS S E M I C O N D S E CT OR BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 27E ]> • 43GS271 Epitaxial-Base, Silicon N -P-N and P-N-P VERSAWATT Transistors QGeamT-? ■ HA S T - 3 3 ~ \ TERMINAL DESIGNATIONS


    OCR Scan     		PDF BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 43GS271 O-22QAB bd799 bd800

    motorola 2383 pnp

    Abstract: MMBT6517LT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor M M BT6517LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 350 Vdc C ollector-B ase Voltage v CBO 350 Vdc Emitter- B ase Voltage


    OCR Scan     		PDF BT6517LT1 O--236AB) 1/2MSD7000 MMBT6517LT1 motorola 2383 pnp MMBT6517LT

    2SC2398

    Abstract: 2SC2375 2SC1815 2SC2431 2SC2378 2SA1013 2SC2362 2SC2363 2SC2383 2SC2384
    Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SC2412 150mV 2SC2389 2SC2390 2SC2430 2SC2431 2SC2432 2SC2398 2SC2375 2SC1815 2SC2431 2SC2378 2SA1013 2SC2362 2SC2363 2SC2383 2SC2384

    vno300m

    Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 100kQ 500MIh, 200MHz) 2SA103I5 vno300m 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028

    UFNF123

    Abstract: UFNF120
    Text: U NITRO DE CORP 9347963 ^2 U N ITRO DE DE CORP 0D1DÖS7 92D 10827 POWER MOSFET TRANSISTORS ufnfi2o 100 Volt, 0.30 Ohm N-Channel UFNF122 UFNF123 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


    OCR Scan     		PDF UFNF122 UFNF123 UFNF121 UFNF120 UFNF123 UFNF120

    MRF557

    Abstract: No abstract text available
    Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line NPN Silicon RF Low Power TVansistor . . . designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W


    OCR Scan     		PDF MRF557 MRF557

    ufnf122

    Abstract: ufnf120 UFNF123
    Text: POWER MOSFET TRANSISTORS y 100 UFNF122 UFNF123 Volt, 0 .3 0 Ohm N-Channel FEATURES DESCRIPTION • • • • • The U nitrode power MOSFET design u tilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.


    OCR Scan     		PDF UFNF122 UFNF123 UFNF120 UFNF121 UFNF123

    Untitled

    Abstract: No abstract text available
    Text: MAXIM UM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V o lta g e v CEO -3 0 0 Vdc C o lle c to r-B a s e V o lta g e v CBO -3 0 0 V dc E m iite r-B a s e V o lta g e Vebo -5 .0 V dc C o lle c to r C u rre n t — C o n tin u o u s 'C -5 0 0


    OCR Scan     		PDF MPSW92