HOA1180
Abstract: HOA1180-001 HOA1180-002 HOA1180-003 SD1410 SD1440 SE1450 h237
Text: HOA1180 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • High sensitivity • Wide operating temperature range - 55¡C to +100¡C • 12.0 in.(305 mm) min. 28 AWG PVC insulated wire leads INFRA-24.TIF DESCRIPTION The HOA1180 series consists of an infrared emitting
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HOA1180
INFRA-24
HOA1180
HOA1180-
SE1450,
SD1440,
SD1410.
HOA1180-001
HOA1180-002
HOA1180-003
SD1410
SD1440
SE1450
h237
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HOA1180-003
Abstract: HOA1180-001 HOA1180 HOA1180-002 SD1410 SD1440 SE1450 infra red emitter
Text: HOA1180 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • High sensitivity • Wide operating temperature range - 55¡C to +100¡C • 12.0 in.(305 mm) min. 28 AWG PVC insulated wire leads INFRA-24.TIF DESCRIPTION The HOA1180 series consists of an infrared emitting
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HOA1180
INFRA-24
HOA1180
HOA1180-
SE1450,
SD1440,
SD1410.
HOA1180-003
HOA1180-001
HOA1180-002
SD1410
SD1440
SE1450
infra red emitter
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foto transistor
Abstract: foto transistor BPX circuit Q62702-P20 Q62702-P43-S2 Q62702-P43-S3
Text: BPX 81 BPX 81 feo06021 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 440 nm bis 1070 nm
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feo06021
Q62702-P
IPCE/IPCE25o
foto transistor
foto transistor BPX circuit
Q62702-P20
Q62702-P43-S2
Q62702-P43-S3
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feo06021
Abstract: Q62702-P20 Q62702-P43-S2 Q62702-P43-S3
Text: BPX 81 BPX 81 feo06021 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 440 nm bis 1070 nm
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feo06021
IPCE/IPCE25o
feo06021
Q62702-P20
Q62702-P43-S2
Q62702-P43-S3
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HOA1180
Abstract: SE1450 HOA1180-001 HOA1180-002 HOA1180-003 SD1410 SD1440
Text: HOA1180 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • High sensitivity • Wide operating temperature range - 55¡C to +100¡C • 12.0 in.(305 mm) min. 28 AWG PVC insulated wire leads INFRA-24.TIF DESCRIPTION The HOA1180 series consists of an infrared emitting
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HOA1180
INFRA-24
HOA1180
HOA1180-
SE1450,
SD1440,
SD1410.
SE1450
HOA1180-001
HOA1180-002
HOA1180-003
SD1410
SD1440
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ir proximity sensor motion
Abstract: reflective sensor 4 pin
Text: Miniature SMD Reflective Sensor OPR5005 Features: • • • • High temperature operation Surface mountable Compact size Excellent ambient light protection Description: The OPR5005 is a miniature reflective sensor that combines a silicon phototransistor with a GaAIAs LED in a hightemperature opaque polyamide chip carrier. It is designed to sense the motion or proximity of diffuse reflective
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OPR5005
OPR5005
Bullet005
ir proximity sensor motion
reflective sensor 4 pin
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motion sensor light switch
Abstract: OPR5005 ir sensor smd ir proximity sensor motion
Text: Miniature SMD Reflective Sensor OPR5005 Features: • • • • High temperature operation Surface mountable Compact size Excellent ambient light protection Description: The OPR5005 is a miniature reflective sensor that combines a silicon phototransistor with a GaAIAs LED in a hightemperature opaque polyamide chip carrier. It is designed to sense the motion or proximity of diffuse reflective
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OPR5005
OPR5005
motion sensor light switch
ir sensor smd
ir proximity sensor motion
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transistor smd uw
Abstract: OPR5200 OPR5500
Text: Miniature Surface Mount LED—OPR5200 Phototransistor—OPR5500 Features: • • • • Stackable on 2 mm centers Vertical or horizontal mounting Automatic pick-and-place compatible Combine OPR5200 and OPR5500 to create miniature switch Description: The OPR5200 is a miniature high efficiency GaAIAs light emitting diode in a high temperature polyamide chip
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LED--OPR5200
Phototransistor--OPR5500
OPR5200
OPR5500
OPR5500
transistor smd uw
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transistor smd uw
Abstract: smd transistor 5c transistor uw 5c smd transistor
Text: Miniature Surface Mount LED—OPR5200 Phototransistor—OPR5500 Features: • • • • Stackable on 2 mm centers Vertical or horizontal mounting Automatic pick-and-place compatible Combine OPR5200 and OPR5500 to create miniature switch Description: The OPR5200 is a miniature high efficiency GaAIAs light emitting diode in a high temperature polyamide chip
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LED--OPR5200
Phototransistor--OPR5500
OPR5200
OPR5500
OPR5500
transistor smd uw
smd transistor 5c
transistor uw
5c smd transistor
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transistor smd uw
Abstract: No abstract text available
Text: Miniature Surface Mount LED—OPR5200 Phototransistor—OPR5500 Features: • • • • Stackable on 2 mm centers Vertical or horizontal mounting Automatic pick-and-place compatible Combine OPR5200 and OPR5500 to create miniature switch Description: The OPR5200 is a miniature high efficiency GaAIAs light emitting diode in a high temperature polyamide chip
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OPR5200
OPR5500
OPR5200
OPR5500
transistor smd uw
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PT460
Abstract: PT460F DLA9 PT461 PT465F c125t
Text: PT460/PT460F/PT461 /PT461 F/PT465F PT460/PT460F/PT461 PT461 F/PT465F Duble-end Type Phototransistor • Features ■ Outline Unit : mm Dim-ns 1. Compact double-end type package 2. Taping package (2 000Pcs. /reel) (PTX X X T ) 3. Visible light cut-off type
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PT460/PT460F/PT461
/PT461
F/PT465F
PT460/PT460F/PT461
PT461
000Pcs.
PT460F/PT461
F/465F)
PT460
PT460
PT460F
DLA9
PT465F
c125t
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pin diagram of IC 7402
Abstract: IC 7402 pin diagram 4 pin optocoupler CI 7402 TCED4100 IC 7402 TCED1100 TCED1100G TCED2100 ED1100
Text: TCED1100 G up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
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TCED1100
TCED4100
TCED1100/
TCED2100/
TCED4100
16-lead
TCED1100G
pin diagram of IC 7402
IC 7402 pin diagram
4 pin optocoupler
CI 7402
IC 7402
TCED2100
ED1100
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A W esentliche M erkmale Features • • • • • • • • Preisgünstiges Kunststoffgehäuse Sidelooker Hohe Empfindlichkeit Passend zu IRED IRL 80 A, IRL 81 A Low cost plastic package
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68000-A7852
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telefunken em 800
Abstract: Telefunken u 237 fll100
Text: a^EOCHb DOD?ôbtî M • AL6G T czr 8000 •T czr so o i TnKLifFMtMKdKl electronic Creative Technologies Matchable Pairs-Emitter and Detector Construction: Emitter: GaAs-IR Emitting Diode Detector: Silicon NPN Epitaxial Planar Phototransistor 80?0 and XCZjf.aqjÇJ
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00G7fi72
BIAL66
Q0D7fl73
8000-TCZT
telefunken em 800
Telefunken u 237
fll100
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Untitled
Abstract: No abstract text available
Text: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTBQIICS L14C1/C2 PACKAGE DIMENSIONS The L14C series is a silicon phototransistor mounted in a wide angle, TO-18 package. •- <f>D-• UJ z I*— <pDl —-J a « o h 4 i z A . I FEATURES ST1336 SYMBOL INCHES
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L14C1/C2
ST1336
74bfc
000L425
ST1072
ST1077
ST1074
74bbflSl
0QDb42b
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE aSE D • ^ 5 3 1 3 1 DOHIOO? _ JL_ CNX62 m r - - 8 5 HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line Dl L plastic envelope. The base is not connected.
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CNX62
CNX62
E90700
0110b
T-41-83
bb53T31
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CNX62
Abstract: BS415 DDS1015
Text: N AMER PHILIPS/DISCRETE 2SE D • b b S S ^ l GOHIQÜ? .1 ■ CNX62 T - H l - S Z HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.
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CNX62
CNX62
E90700
0110b
804/VER
hbS3T31
T-41-83
BS415
DDS1015
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H0A1180
Abstract: A1180-003 Honeywell LLE
Text: HOA1180 Reflective Sensor FEA TU R E S . C hoice of phototransistor or photodarlington output • High sensitivity • W ide operating tem perature range -55°C to +100°C • 12.0 in.(305 mm ) min. 28 AW G PVC insulated wire leads DES C R IPTIO N The H O A 1 180 series consists of an infrared em itting
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HOA1180
A1180-003)
SE1450,
SD1440,
SD1410.
H0A1180
A1180-003
Honeywell LLE
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CNX62
Abstract: BS415 sot174
Text: N AMER PHILIPS/DISCRETE 25E D • bbSB TBl GOHIQÜ? .1 ■ Jl CNX62 r - 4 | - 8 5 H IG H -VO LTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor irr a dual-in-line Dl L plastic envelope. The base is not connected.
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CNX62
CNX62
E90700
0110b
804/VDE
bb53T31
T-41-83
BS415
sot174
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K3020P
Abstract: K3021 K3023 K3022P 94vo diagram K3021P
Text: Temic K3020P G Series S e m i c o n d u c t o r s Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a
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K3020P
13-Jun-96
K3021
K3023
K3022P
94vo diagram
K3021P
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CNX62
Abstract: BS415
Text: N AMER PHILIPS/DISCRETE 2SE D • ^53*131 GOHIOO? .1 ■ CNX62 r - 4 1 - g s HIGH-VO LTAGE O PTO CO U PLER T h e C N X 6 2 is an optocoupler consisting of an infrared emitting G aA s diode and a silicon npn phototransistor in a dual-in-line D IL plastic envelope. T h e base is not connected.
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CNX62
CNX62
bbS3T31
T-41-83
BS415
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Untitled
Abstract: No abstract text available
Text: TCED1100 G up to TCED4100 Vishay Telefunken T Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arse nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
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TCED1100
TCED4100
TCED1100/
TCED2100/
TCED4100
16-lead
11-Ja
TCED2100
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741S
Abstract: No abstract text available
Text: I I f l M f l M l l T n i l TECHNICAL DATA MINIATURE PHOTOTRANSISTOR S2829 T h e S 2 8 2 9 is a high s e n s itiv ity p h o to tra n s ito r m o ld e d w ith h ig h q u a lity v is ib le -c u t e p o x y re s in into a s u b m in ia tu re s iz e of 1.6 x 3 .5 x 1.3 m m . It is 1/2 to 1 /3 in s iz e a n d w e ig h t of th e
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S2829
741S
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Untitled
Abstract: No abstract text available
Text: TCED1100 G up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arse nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
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TCED1100
TCED4100
TCED1100/
TCED2100/
TCED4100
16-lead
11-Jan-99
TCED2100
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