Untitled
Abstract: No abstract text available
Text: 5STF 05T2625 5STF 05T2625 Old part no. TR 907FC-530-26 Medium Frequency Thyristor Properties § Amplifying gate § High operational capability § Optimized turn-on and turn-off parameters § High operating frequency Applications § Power switching applications
|
Original
|
PDF
|
05T2625
907FC-530-26
05T2625.
05T2425.
1768/138a,
TR/237/07
Jul-10
05T2625
|
317 6 terminal diode
Abstract: No abstract text available
Text: APTM20DUM05 Dual common source MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features • • • • S D2 Benefits
|
Original
|
PDF
|
APTM20DUM05
50/60Hz
317 6 terminal diode
|
ETG81-050
Abstract: 1DI400 1DI400D-100 358 ez 802 ETK81-050 1DI300A-120 1DI200Z-100 1D500A-030 ETK85-050 ID200A-020
Text: - 237 - m±M. -n F — r BO o- _ k' T i =25°C I S f t r t iE ( V ) Ve E ft A V * . be * (A) (A) * * . t,t. ft k ft * m m R.b 0-0 VK (u s ) T (A) (A) (A) CV) I F k (A) (i¿&) M. k 1p V BE di/dt (A) (V) (A/í/s) * k 2.0 2.5 200 4.0 2.0 12 3.0 4.0 -4.0
|
OCR Scan
|
PDF
|
1D200A-020
1D500A-030
1DI200A-120
1DI200A-140
H-101
ETG81-050
1DI400
1DI400D-100
358 ez 802
ETK81-050
1DI300A-120
1DI200Z-100
1D500A-030
ETK85-050
ID200A-020
|
Untitled
Abstract: No abstract text available
Text: r z 7 S G S -T H O M S O N L ie r a s * ^ 7 #® K S T T B 1 2 0 6 D I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 12A V rrm 600V trr (typ) 50ns V f (max) 1.3V K. FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA
|
OCR Scan
|
PDF
|
T0220AC
STTB1206D
STTB1206DI
D073b31
|
PN channel MOSFET 10A
Abstract: 1S71 1S74 C035 STD20N06 TJ50D NMOS depletion pspice model diode 935 lg
Text: S G S -T H O M S O N HUSCTIiMOÛS STD20N06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V dss RDS on Id STD20N06 60 V < 0.03 n 20 A (*) . . • . . . . ■ TYPICAL RDS(on) = 0.026 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
|
OCR Scan
|
PDF
|
STD20N06
STD20N06
O-251)
O-252)
O-251
O-252
0068771-E
0068772-B
PN channel MOSFET 10A
1S71
1S74
C035
TJ50D
NMOS depletion pspice model
diode 935 lg
|
marking rzr
Abstract: 0074B
Text: SC STH O M SO N STANDARD TRIACS FEATURES = 25A . VDrm = 400V to 800V • High surge current capability ■ It RM S DESCRIPTION T0220 non-insulated (Plastic) The T25xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose switching
|
OCR Scan
|
PDF
|
T25xxxH
T25xxxH
T0220
marking rzr
0074B
|
BTB04
Abstract: btb04 600 BTA04 T0220AB BT 139 Triac BTB 700
Text: 7 / BTA04 T/D/S/A BTB04 T/D/S/A SGS-THOMSON H Ü S i[L i S ïï[M iM (g ® SENSITIVE GATE TRIACS FEATURES • VERY LOW Iqt = 10mA max ■ LOW Ih = 15mA max ■ BTA Family: INSULATING VOLTAGE = 2500V(RMS (UL RECOGNIZED: E81734) DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high per
|
OCR Scan
|
PDF
|
BTA04
BTB04
E81734)
BTA/BTB04
71S1B37
btb04 600
T0220AB
BT 139 Triac
BTB 700
|
ri33a
Abstract: No abstract text available
Text: f Z T S G S - T H O M S O N H H O T *i B T A 2 4 B W /C W SNUBBERLESS TRIACS FEATURES • HIGH COMMUTATION : dl/dt c > 22A/ms without snubber ■ HIGH SURGE CURRENT : Itsm = 240A ■ INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION
|
OCR Scan
|
PDF
|
E81734)
BTA24BW/CW
T0220AB
QG77172
ri33a
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M œ m iiê W K S TGDV 606 -> 612 ALTERNISTORS FEATURES • HIGH COMMUTATION : > 213 A/ms 400Hz a2 - - ■ HERMETIC PACKAGE : TO 65 Metal A1 i G ■ HIGH VOLTAGE CAPABILITY : V Dr m = 1200 V A, w DESCRIPTION ° A2 The TG D V 606 — > 612 use a high performance
|
OCR Scan
|
PDF
|
400Hz)
|
Diode LT 410
Abstract: No abstract text available
Text: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier
|
OCR Scan
|
PDF
|
MDS35
MDS35
Diode LT 410
|
Untitled
Abstract: No abstract text available
Text: / = 7 SGS-THOMSON ^ 7 # ® ILiET^OlDGS S25XXXH SCR FEATURES • It rms = 25A - V drm = 200V to 800V ■ High surge current capability DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose
|
OCR Scan
|
PDF
|
S25XXXH
S25xxxH
T0220
|
Untitled
Abstract: No abstract text available
Text: rZZ SG S -TH O M S O N ^7# R ILIlOÎIBOlDSS S0402xH SENSITIVE GATE SCR FEATURES • I t r m s = 4A > V drm = 200V to 800V ■ Low Iq t <200 (xA DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose
|
OCR Scan
|
PDF
|
S0402xH
S0402xH
T0220
|
Untitled
Abstract: No abstract text available
Text: ¿ = 7 SGS-THOMSON BTA26 BW/CW SNUBBERLESS TRIACS FEATURES . HIGH COMMUTATION : dl/dt c>22A/ms without snubber . HIGH SURGE CURRENT : Ijsm = 250A • Vqrm UP TO 800V ■ BTA Family: INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED: E81734) DESCRIPTION The BTA26 BW/CW triac family are high perform
|
OCR Scan
|
PDF
|
BTA26
E81734)
|
Untitled
Abstract: No abstract text available
Text: fZ 7 S G S -T H O M S O N Ä 7 # R K M i r a ï ï M O t g S S T T A 6 0 0 6 T V 1 12 TURBOSW ITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 2*30A V rrm 600V trr (typ) 35ns V f (max) 1.5V K2 A2 K1 A1 STTA6006T(V)1
|
OCR Scan
|
PDF
|
STTA6006T
00b0152
|
|
|
Untitled
Abstract: No abstract text available
Text: £ = 7 S G S -T H O M ^ 7# . S O N H O g œ illL iœ li[liS i B Y T 3 0 P-2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATIONS ■ FREE WHEELING DIODE IN CONVERTERS
|
OCR Scan
|
PDF
|
|
BYT 77 DIODE
Abstract: No abstract text available
Text: C T S G S -T H O M S O N * 7 # . HD»[llUi iiD i BYT 08P-200 -»400 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATIONS ■ FREE WHEELING DIODE IN CONVERTERS
|
OCR Scan
|
PDF
|
08P-200
T0220AC
BYT08P-
7T2T237
00b57a7
BYT 77 DIODE
|
BTY230
Abstract: BYT230PI
Text: E i. BYT230PI V -800 BYT231 PI(V)-800 SC S -TH O M S O N M(g^ [lL[i(gTT^(2M S FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 V rms
|
OCR Scan
|
PDF
|
BYT230PI
BYT231
BTY231
BTY230PI
7W237
00b0327
BTY230
|
BYV54V
Abstract: bbT23 BYV541V BYV541V-200 BYV54V-200 BYV54V200 43B diode
Text: BYV54V BYV541V SG S-THO M SO N ILI HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • . ■ ■ . ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED: Insulating voltage = 2500 V rms
|
OCR Scan
|
PDF
|
BYV54V
BYV541V
BYV541V-200
BYV54V-200
bbT23
BYV541V
BYV541V-200
BYV54V-200
BYV54V200
43B diode
|
Untitled
Abstract: No abstract text available
Text: SGS'THOMSON * 7 # . K lD gllS [ilLI«0H @ i B Y T 3 0 P I-2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME Insulating voltage 2500 V rms ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING ■ INSULATED: Capacitance 15pF
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: r Z J SGS-THOMSON T08 A SENSITIVE GATE TRIACS FEATURES • It RMS = 0.8 A ■ Vdrm = 200 V to 600 V ■ Igt ^ 10 mA ABSOLUTE RATINGS (limiting values) Param eter Sym bol IT(RMS) ITSM Value Unit A RMS on-state current ( 360° conduction angle ) Tl= 55°C
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 5bE D • 7= ^ 5 3 7 DDMlflb^ TOb ■SGTH - f Z 7 s g s-THonsoN T -0 3 -/-5 * S C S - T H O M S O N 5 A T# [L gTO@ KS B Y T 1 6 P -2 0 0 A -» 4 0 0 A FAST RECOVERY RECTIFIER DIODES ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING
|
OCR Scan
|
PDF
|
16P-200A
00A--------------Â
16P-200A
|
Untitled
Abstract: No abstract text available
Text: Æ 7 SGS'THOMSON “ •7/ E u ig fflM » M SS40 THYRISTOR MODULE FEATURES ■ Vdrm = V rrm UP T 0 1400 V ■ It R M S =55A . HIGH SURGE CAPABILITY . INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MSS40 family are constitued of two general
|
OCR Scan
|
PDF
|
MSS40
values70
Q07DD03
|
Untitled
Abstract: No abstract text available
Text: ¿ = 7 SCS-THOMSON MÊ @i Li(gre(s M i TPDV 640 — > 1240 ALTERNISTORS FEATURES . HIGH COMMUTATION : > 142 A/ms (400Hz) . INSULATING VOLTAGE = 2500V(rm S) (UL RECOGNIZED : EB81734) . HIGH VOLTAGE CAPABILITY: V Drm = 1200 V DESCRIPTION The TPDV 640 —> 1240 use a high performance
|
OCR Scan
|
PDF
|
400Hz)
EB81734)
GG7bQ43
|
T2514
Abstract: No abstract text available
Text: SGS-THOMSON T2514XKS T2516xKS mi SNUBBERLESS TRIACS FEATURES • I t RMS = 25A ■ HIGH COMMUTATION : (dl/dt)c;> 12A/msT2514xKS S: 22A/ms T2516xKS . INSULATING VOLTAGE =2500V(rms) (UL RECOGNIZED : E81734) DESCRIPTION The T2514/T2516xKS series of isolated triacs
|
OCR Scan
|
PDF
|
T2514XKS
T2516xKS
2A/msT2514xKS
E81734)
T2514/T2516xKS
0074L71
T2514
|
