Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    236AB Search Results

    236AB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R1Q3A7236ABG-33IA0 Renesas Electronics Corporation QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray Visit Renesas Electronics Corporation
    R1QGA7236ABG-25IB0 Renesas Electronics Corporation QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray Visit Renesas Electronics Corporation
    R1QHA7236ABG-25IA0 Renesas Electronics Corporation QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray Visit Renesas Electronics Corporation
    R1QBA7236ABG-20IB0 Renesas Electronics Corporation QDRII/DDRII/ QDRII+/DDRII+ SRAM, LBGA, /Tray Visit Renesas Electronics Corporation
    R1QDA7236ABB-20IA0 Renesas Electronics Corporation 72-Mbit QDR™II+ SRAM 4-word Burst, LBGA, /Tray Visit Renesas Electronics Corporation
    SF Impression Pixel

    236AB Price and Stock

    APEM Inc 5236AB

    SWITCH TOGGLE SPDT 6A 125V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 5236AB Tray 1,014 1
    • 1 $7.24
    • 10 $6.253
    • 100 $5.3943
    • 1000 $4.66512
    • 10000 $4.66512
    Buy Now
    Mouser Electronics 5236AB 331
    • 1 $6.97
    • 10 $5.64
    • 100 $5.39
    • 1000 $4.53
    • 10000 $4.53
    Buy Now
    Newark 5236AB Bulk 50
    • 1 -
    • 10 -
    • 100 $6.63
    • 1000 $6.08
    • 10000 $5.76
    Buy Now
    RS 5236AB Bulk 14 Weeks 50
    • 1 -
    • 10 -
    • 100 $4.8
    • 1000 $4.8
    • 10000 $4.8
    Get Quote
    Powell Electronics 5236AB 13 1
    • 1 $22.9
    • 10 $22.9
    • 100 $10.35
    • 1000 $9.5
    • 10000 $9.5
    Buy Now
    Master Electronics 5236AB 480
    • 1 -
    • 10 $6.56
    • 100 $5.18
    • 1000 $4.3
    • 10000 $4.17
    Buy Now

    Analog Devices Inc DC2236A-B

    EVAL BOARD FOR LTC3890
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DC2236A-B Box 5 1
    • 1 $186.43
    • 10 $186.43
    • 100 $186.43
    • 1000 $186.43
    • 10000 $186.43
    Buy Now
    Mouser Electronics DC2236A-B 3
    • 1 $189.16
    • 10 $189.16
    • 100 $189.16
    • 1000 $189.16
    • 10000 $189.16
    Buy Now
    Analog Devices Inc DC2236A-B 7
    • 1 $185.9
    • 10 $185.9
    • 100 $185.9
    • 1000 $185.9
    • 10000 $185.9
    Buy Now
    Richardson RFPD DC2236A-B 1
    • 1 $180.8
    • 10 $180.8
    • 100 $180.8
    • 1000 $180.8
    • 10000 $180.8
    Buy Now

    APEM Inc 5236AB9

    TOGGLE SWITCH 5000 MINIATURE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 5236AB9 Bulk 50
    • 1 -
    • 10 -
    • 100 $10.968
    • 1000 $10.968
    • 10000 $10.968
    Buy Now
    Mouser Electronics 5236AB9
    • 1 $10.87
    • 10 $10.59
    • 100 $6.58
    • 1000 $5.29
    • 10000 $5.29
    Get Quote
    RS 5236AB9 Bulk 14 Weeks 50
    • 1 -
    • 10 -
    • 100 $8.96
    • 1000 $8.96
    • 10000 $8.96
    Get Quote
    Master Electronics 5236AB9
    • 1 -
    • 10 $10.29
    • 100 $5.58
    • 1000 $4.63
    • 10000 $4.63
    Buy Now

    Renesas Electronics Corporation P9236A-B1NDGI8

    P9236A-B1NDGI8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P9236A-B1NDGI8 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Rochester Electronics LLC R1QDA7236ABB-19IB0

    STANDARD SRAM, 2MX36, 0.45NS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R1QDA7236ABB-19IB0 Bulk 12
    • 1 -
    • 10 -
    • 100 $25.65
    • 1000 $25.65
    • 10000 $25.65
    Buy Now

    236AB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMD TRANSISTOR MARKING w7

    Abstract: No abstract text available
    Text: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


    Original
    PBHV9115T O-236AB) PBHV8115T. AEC-Q101 PBHV9115T 771-PBHV9115T215 SMD TRANSISTOR MARKING w7 PDF

    sot023

    Abstract: No abstract text available
    Text: PESD5V0S2BT Low capacitance bidirectional double ESD protection diode Rev. 03 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional double ElectroStatic Discharge ESD protection diode in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to


    Original
    O-236AB) 771-PESD5V0S2BT-T/R sot023 PDF

    pesd1can4

    Abstract: BV SMD SOT-023 PESD1CAN.215 PESD1CAN
    Text: PESD1CAN CAN bus ESD protection diode Rev. 04 — 15 February 2008 Product data sheet 1. Product profile 1.1 General description PESD1CAN in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines


    Original
    O-236AB) 771-PESD1CAN-T/R pesd1can4 BV SMD SOT-023 PESD1CAN.215 PESD1CAN PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original
    2N7002CK O-236AB) 2N7002CK 771-2N7002CK215 PDF

    88347

    Abstract: GSOT03C GSOT03 GSOT04 GSOT04C GSOT05 GSOT05C GSOT08 GSOT36C
    Text: GSOT03 thru GSOT36C Vishay Semiconductors New Product formerly General Semiconductor Miniature Transient Voltage Suppressors Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View 3 .056 (1.43) .052 (1.33) 0.079 (2.0)


    Original
    GSOT03 GSOT36C O-236AB OT-23) OT-23 MIL-STD-750, 20-Jun-02 88347 GSOT03C GSOT04 GSOT04C GSOT05 GSOT05C GSOT08 GSOT36C PDF

    Untitled

    Abstract: No abstract text available
    Text: Struthers-Dunn 407 East Smith Street - Suite B Timmonsville, SC 29161 US Phone: 843 346-4427 • Fax: (843) 346-4465 E-Mail: info@struthers-dunn.com • Web site:www.struthers-dunn.com Item # 236ABXP-020-115-125VDC, 236TD /237 Series - Time Delay Relays


    Original
    236ABXP-020-115-125VDC, 236TD 500VDC 27390D 33377D PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original
    PMV31XN O-236AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original
    PMV90EN O-236AB) PDF

    smd code marking LF sot23

    Abstract: PESD36VS2UT
    Text: PESD36VS2UT Low capacitance unidirectional double ESD protection diode Rev. 01 — 16 July 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to


    Original
    PESD36VS2UT O-236AB) AEC-Q101 PESD36VS2UT smd code marking LF sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original
    PMV28UN O-236AB) PDF

    PMV40UN2

    Abstract: No abstract text available
    Text: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original
    PMV40UN2 O-236AB) PMV40UN2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original
    PMV16UN O-236AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 15 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original
    O-236AB) PDTD143ET O-236AB PDTB143ET PDTD143XT PDTB143XT PDTD114ET PDTB114ET AEC-Q101 PDF

    APD417

    Abstract: GF2402
    Text: GF2402 Vishay Semiconductor New Product N-Channel Enhancement-Mode MOSFET TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)


    Original
    GF2402 O-236AB OT-23) OT-23 26-Nov-01 APD417 GF2402 PDF

    88142

    Abstract: No abstract text available
    Text: BAT54 thru BAT54S Vishay Semiconductor Schottky Diodes Features TO-236AB SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original
    BAT54 BAT54S O-236AB OT-23) OT-23 E8/10K 30K/box 30K/box 03-Jan-02 88142 PDF

    BCW72

    Abstract: No abstract text available
    Text: BCW71 and BCW72 Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View ct u d ro P New .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 0.037 (0.95)


    Original
    BCW71 BCW72 O-236AB OT-23) BCW69 BCW70 BCW72 PDF

    2n4401 052

    Abstract: transistor 2n4401 equivalent TS36
    Text: MMBT4401 Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.037 (0.95) 0.037 (0.95) .007 (0.175) .005 (0.125) 0.079 (2.0) 0.035 (0.9) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95)


    Original
    MMBT4401 O-236AB OT-23) OT-23 E8/10K 2n4401 052 transistor 2n4401 equivalent TS36 PDF

    Marking Code S72

    Abstract: s72 sot 23 s72 mosfet 2N7002 S72 SOT-23
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) G 0.037 (0.95) 0.037 (0.95) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1)


    Original
    2N7002 230mA O-236AB OT-23) OT-23 E8/10K 30K/box 500mA 200mA 200mA, Marking Code S72 s72 sot 23 s72 mosfet 2N7002 S72 SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP2105 Ü 3W Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / BVdgs -50V R d S ON P rod uct m arking fo r SOT-23: Order Number/Package ^G S (th ) (max) (max) TO-236AB* TO-92 Die 6Q -2.0 V TP2105K1 T P 21 05N 3 T P 21 05N D


    OCR Scan
    TP2105 O-236AB* TP2105K1 OT-23: PDF

    N-Channel Depletion-Mode MOSFET high voltage

    Abstract: SOT-23 MARKING mn DW-200 NDE SOT23 MARKING
    Text: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Id s s Order Number / Package Product marking for SOT-23: b v dgx (max) (min) TO-236AB* NDE* 500V 1.0KÌÌ 1.0mA LND250K1 where * = 2-week alpha date code ’ Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels.


    OCR Scan
    LND250 O-236AB* LND250K1 OT-23: OT-23. N-Channel Depletion-Mode MOSFET high voltage SOT-23 MARKING mn DW-200 NDE SOT23 MARKING PDF

    marking AGs sot-23

    Abstract: marking AGs sot23 ags marking n1a marking n1a sot23 marking code VN2106
    Text: VN2106 VN2110 S u p ertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S ON Product marking for SOT-23: (max) TO-92 TO-236AB* 60V 4.0Q VN2106N3 - VN2106ND 100V 4.0C1 — VN2110K1 VN2110ND BV dqs


    OCR Scan
    VN2106 VN2110 OT-23: VN2106N3 O-236AB* VN2106ND VN2110ND VN2110K1 OT-23. VN2106/VN2110 marking AGs sot-23 marking AGs sot23 ags marking n1a marking n1a sot23 marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: LP0801 h m . _ Low ThreshoJ P relim ina ry P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV DGS -16.5V D max (min) V GS(th) (max) 12.0Q -20 0m A -1.0V DS(ON) ^D(ON) Order Number / Package TO-236AB*


    OCR Scan
    LP0801 O-236AB* LP0801K1 0801N -150m -100m -200m 300jxs PDF

    marking Z2

    Abstract: BZX84C5V1 BZX84C5V6
    Text: 118 11 DÛ I MMm h m I ÀX \ SOT-23/TO-236AB 2 \/ M / ‘TM PZ’ ZENER D IO D E S ELECTRICAL CH ARACTERISTICS at A = 25 C Zener Voltage Leakage Current Zener Impedance Pinning Min. Nom. Max. @l ZT Max @VR Max. ZZT @ IZT Marking V (V) (V) (mA) (|JA) (V)


    OCR Scan
    OT-23/TO-236AB TMPZ5230 TMPZ5231 TMPZ5232 TMPZ5234 TMPZ5236 TMPZ5237 TMPZ5239 TMPZ5240 TMPZ5242 marking Z2 BZX84C5V1 BZX84C5V6 PDF

    PT3904

    Abstract: No abstract text available
    Text: SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T . = 25°C V BR CBO V (BR)CEO V(BR)EBO Max. @ vCB Device Type M arking (V) (V) (V) VCE(sat) DC C urrent Gain ^CBO h FE t>FE @ lc @ VCE Max. @ lc (nA) (V) Min. Max. (mA) (V) (V) (mA) 't Min. @ lc (MHz) (mA) ts'


    OCR Scan
    OT-23/TO-236AB PT2222A PT3904 TMPT4401 PT5089 PT6427 PTA06 PTA42 050H33Ã PT3904 PDF