d749n
Abstract: LTR-S D1069N D1809N D269N D849N
Text: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D269N
D749N
D1069N
D1809N
D849N
d749n
LTR-S
D1069N
D1809N
D269N
D849N
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3771
Abstract: thyristor 406 A 3198 T1059N T1589N T2159N T308N T458N T709N
Text: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D Thyristor T [°C] [A]
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T308N
T458N
T709N
T1059N
T1589N
T2159N
3771
thyristor 406
A 3198
T1059N
T1589N
T2159N
T308N
T458N
T709N
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D1809N
Abstract: d749n D1069N D269N D849N
Text: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D269N
D749N
D1069N
D1809N
D849N
D1809N
d749n
D1069N
D269N
D849N
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T1059N
Abstract: T1589N T2159N T308N T458N T709N KD202V
Text: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D Thyristor T [°C] [A]
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T308N
T458N
T709N
T1059N
T1589N
T2159N
T1059N
T1589N
T2159N
T308N
T458N
T709N
KD202V
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gun sound effects generator
Abstract: CPU 1825 sunplus program rom
Text: SPF20A 63K MUSIC SYNTHESIZER GENERAL DESCRIPTION The SPF20A is a fully CMOS integrated circuit. It uses advanced design and process technology to combine an 8-bit RISC processor, a 4-channel music synthesizer, 256K-byte program ROM, 160-byte working SRAM,
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SPF20A
SPF20A
256K-byte
160-byte
378K-bit
gun sound effects generator
CPU 1825
sunplus program rom
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Untitled
Abstract: No abstract text available
Text: PACSZ1284 CALIFORNIA MICRO DEVICES P/ActiveTM IEEE 1284 ECP/EPP Termination Network Features Application • 28-pin QSOP package • Low cost Parallel Port Terminations and Filters for PCs and peripherals • 17 filtering lines in a single package • In-system ESD protection to 30kV contact discharge
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PACSZ1284
28-pin
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PACSZ1284
Abstract: PACSZ128401Q PACSZ128402Q 2328 diode
Text: CALIFORNIA MICRO DEVICES PACSZ1284 P/ActiveTM IEEE 1284 ECP/EPP Termination Network Features Application • 28-pin QSOP package • Low cost Parallel Port Terminations and Filters for PCs and peripherals • 17 filtering lines in a single package • In-system ESD protection to 30kV contact discharge
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PACSZ1284
28-pin
PACSZ1284
PACSZ128401Q
PACSZ128402Q
2328 diode
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apt100dl60b
Abstract: APT100DL60S C 2328
Text: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)
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APT100DL60B
APT100DL60S
O-247
Cath30)
C 2328
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2328 diode
Abstract: No abstract text available
Text: LASER COMPONENTS GmbH Hausanschrift / Home address Postanschrift / P.O. Box Werner-von-Siemens-Str. 15 Postfach 1129 D-82140 Olching D-82133 Olching Tel. 0 81 42 28 64 0 • Fax (0 81 42) 28 64 11 http://www.lasercomponents.de • E-Mail: info@lasercomponents.de
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D-82140
D-82133
cavit166
2328 diode
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727 thyristor
Abstract: M32 diode an 7591 thyristor 4592 D849N 8906 D1069N D1809N D269N D3301N
Text: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D269N
D749N
D1069N
D1809N
D849N
727 thyristor
M32 diode
an 7591
thyristor 4592
D849N
8906
D1069N
D1809N
D269N
D3301N
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DIODE 615 200A
Abstract: C 2328 APT100DL60S apt100dl60b APT100DL60 induction heat resonant
Text: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)
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APT100DL60B
APT100DL60S
O-247
DIODE 615 200A
C 2328
APT100DL60
induction heat resonant
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Untitled
Abstract: No abstract text available
Text: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)
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APT100DL60B
APT100DL60S
O-247
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3225 K50
Abstract: D4401N D660N D748N D1029N D2209N D2659N
Text: M2 - Schaltung ~ M2K ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 300 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode
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D748N
D660N
D1029N
D2209N
184K0
3225 K50
D4401N
D660N
D748N
D1029N
D2209N
D2659N
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4041
Abstract: 4026 datasheet 9759 diode D1049N D428N D4401N D798N 4026 416-1 335 7847
Text: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 270 V 1400 V 335 V 1600 V 370 V 1800 V ~ ~ ~ ~ ~ + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom
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D428N
D798N
D1049N
D4401N
4041
4026 datasheet
9759 diode
D1049N
D428N
D4401N
D798N
4026
416-1 335
7847
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Untitled
Abstract: No abstract text available
Text: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)
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APT100DL60B
APT100DL60S
O-247
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D1049N
Abstract: D428N D4401N D798N
Text: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 270 V 1400 V 335 V 1600 V 370 V 1800 V ~ ~ ~ ~ ~ + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom
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D428N
D798N
D1049N
D4401N
D1049N
D428N
D4401N
D798N
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Untitled
Abstract: No abstract text available
Text: SMG2328 100V, 250mΩ, 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
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SMG2328
SMG2328
SC-59
01-Jun-2010
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Untitled
Abstract: No abstract text available
Text: SMG2328 100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient
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SMG2328
SC-59
SMG2328
30urface
21-Nov-2013
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2328 diode
Abstract: No abstract text available
Text: SMG2328 100V, 250mΩ, 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
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SMG2328
SMG2328
SC-59
board270
01-Jun-2010
2328 diode
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F 2328
Abstract: No abstract text available
Text: SMG2328 100V, 250mΩ, 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
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SMG2328
SMG2328
OT-23
board270
10-May-2010
F 2328
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snubber resistance of IGBT
Abstract: RCD snubber for igbt igbt protection circuit diagram inverters circuit diagram igbt 275120 IGBT snubber for inductive load dc motor speed control circuit diagram with IGBT snubber
Text: 11- IGBT SNUBBER CIRCUIT SSM2- Features: 1. 2. 3. 4. 5. Low snubber losses Directly reduces turn-off Voltage over-shoot No oscillations in DC bus Mount directly to heat sink Flexible pins fit for almost all IGBT modules Description: Designed for motor control, inverters, and power
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7503bS0
snubber resistance of IGBT
RCD snubber for igbt
igbt protection circuit diagram
inverters circuit diagram igbt
275120
IGBT snubber for inductive load
dc motor speed control circuit diagram with IGBT
snubber
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1N407E
Abstract: No abstract text available
Text: Zero-TC Reference Diodes Micmsemj I Part N um ber OTC M icrosem i ; P ackage i O u tlin e Division \ Type ; Mil Spec Pow er Data S h e e t ID W Vz (V) Izt <mA) «V z (%/C) Z zt (n ) IR i V R ! Toi. (uA ) ! 0 0 ;(+/-%) 1N4069 Scottsdale DD STD 2323 2 51 7 5
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OTC-18
1N407E
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Untitled
Abstract: No abstract text available
Text: MPSA28 MPSA29* M AXIMUM RATINGS Symbol Rating C o llector-E m itter Voltage MPSA28 MPSA29 80 Collector-Base Voltage VCBO 80 Em itter-Base Voltage v EBO 12 Vdc C ollector C urrent — C ontinuous >C 500 m Adc Total Device D issipation <5 T a = 25°C Derate above 25°C
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MPSA28
MPSA29*
MPSA29
O-226AA)
MPSA20,
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TF 450
Abstract: No abstract text available
Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218
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T0218
NTE2305)
T0220
TF 450
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