TMM27128D
Abstract: TMM23128P
Text: TOSHIBA MOS MEMORY PRODUCTS 1 2 8 K B I T 1 6 K y V O R D X 8 B IT M A S K ROM T M N -C H A N N E L S IL IC O N GATE M 7 23128P DESCRIPTION The T M M 23128P is a 131,072 b it read o n ly m em ory organized as 16,384 w ords by 8 bits w ith lo w b it cost, thus being suitable fo r use in program
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TMM23128P
TMM23128P
TMM27128D,
gatMM23128P
100/us
TMM27128D
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TMM24128AP/AF
Abstract: TMM23128P TMM24128AP TMM24128AF TMM24128
Text: TOSHIBA MOS MEMORY PRODUCTS T M M 2 4 1 2 8 A P /A F 1 6 ,3 8 4 W O R D X 8 BIT ONE T IM E PROGRAM MABLE READ ONLY M EM O RY _ _ _ _ _ _ _ _ _ _ . _ _ | |VI IVI241 ¿oAP/Ar N CHANNEL SILICON STACKED GATE MOS DESCRIPTION increasing access tim e. The electrical characteristics
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OCR Scan
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TMM24128AP/AF
VI241
TMM241
28AP/AF
200ns,
TMM27128AD
200ns
TMM23128P
TMM24128AP
TMM24128AF
TMM24128
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