Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 52E D 7TT7Q7b □00737t FC109 b T-37-/3 P N P Epitaxial Planar S ilico n C o m p o site Transistor 2067 Switching Applications with Bias Resistances R1=22ki2, R2=22kn F eatures •On-chip bias resistors (Rj = 22kQ,R2= 22ki2) • Composite type with 2 transistors contained in the CP package currently in use, improving the
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00737t
FC109
T-37-/3
22ki2,
22ki2)
FC109
2SA1342,
4139MO
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR FC112 CORP SEE D 7 eH 7 0 7 b 0 0 0 7 3 0 2 1 T -3 S -II # N P N Epitaxial Planar S ilico n C o m p o site Transistor 2066 Switching Applications 3080 with Bias Resistances R1=22kQ, R2=22kO F ea tu res On-chip bias resistors (Ri = 22kQ,R2= 22kfl)
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FC112
22kfl)
FC112
2SC3396,
4139MO
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KSR2103
Abstract: KSR1103
Text: PNP EPITAXIAL SILICON TRANSISTOR KSR2103 SWITCHING APPLICATION Bias Resistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=22KQ , R2=22K£1) • C om plem ent to K S R 1103 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR2103
KSR1103
OT-23
-10nA,
-100nA
KSR2103
KSR1103
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KSR1107
Abstract: KSR2107
Text: KSR2107 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=22KQ , R2=47K£i) • C om plem ent to K S R 1107 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR2107
KSR1107
OT-23
-10nA,
KSR1107
KSR2107
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transistor 1207
Abstract: R1207
Text: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built in • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R esistor (Ri<*22kQ, R2=47kfl) • Com plem ent to KS R 1207 ABSOLUTE MAXIMUM RATINGS (TA=25t)
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KSR2207
47kfl)
Collect00/A,
-10mA,
-100/iA
transistor 1207
R1207
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3079-2
Abstract: No abstract text available
Text: Ordering number: EN 3079 No.3079 SMiVO, F C l l l PNP Epitaxial Planar Silicon Composite Transistor i Switching Applications Features • On-chip bias resistors Ri = 22kfl,R2 = 22kQ • Composite type with 2 transistors contained in the CP package currently in use, improving the
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22kfl
2SA1342,
3079-2
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Untitled
Abstract: No abstract text available
Text: KSR1111 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=22KQ) • Complement to KSR2111 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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KSR1111
KSR2111
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Untitled
Abstract: No abstract text available
Text: KSR1103 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=22KQ, RJ=22KQ) • Complement lo KSR2103 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
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KSR1103
KSR2103
OT-23
100hA
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Untitled
Abstract: No abstract text available
Text: KSR1208 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r B u ilt In • Sw itching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor <R,=47K0, R,=22KQ) • Complement to KSR2208 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR1208
KSR2208
100/jA
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i22k
Abstract: KSR1207 KSR2207
Text: KSR2207 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=22KQ , R2=47K£i) • C om plem ent to KSR 1207 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR2207
KSR1207
O-92S
-10nA,
i22k
KSR1207
KSR2207
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR FC111 CORP 22E D 7Tî707t Q0D73Ô0 ñ T-37-/3 # PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications 3079 with Bias Resistances R1=22kfl, R2=22kO Features • On-chip bias resistors (Ri = 22kfl,R2= 22kQ) • Composite type with 2 transistors contained in the CP package currently in use, improving the
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FC111
Q0D73Ã
T-37-/3
22kfl,
22kfl
2SA1342,
4139MO
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Untitled
Abstract: No abstract text available
Text: KSR2103 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=22K!2, R¡=22KQ) • Complement to KSR1103 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR2103
OT-23
KSR1103
7Tti414S
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Untitled
Abstract: No abstract text available
Text: KSR1107 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In Switching Circuit, Inverter, Interface circuit Driver circuit 1Built in bias Resistor (R,= 22KQ, Ri=47K!7| 1Complement to KSR2107 SO T-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR1107
KSR2107
100fc
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KSR1203
Abstract: KSR2203
Text: [S AM SUNG SEM IC O N D U CT O R INC "f-3 S'H ^4 E 0 KSR1203 | 7 e,b‘4l ‘l2 00070^*7 1 | NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R,=22KQ, R! =22KO)
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KSR1203
KSR2203
O-92S
KSR2203
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Untitled
Abstract: No abstract text available
Text: KSR2011 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92 • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R=22KQ) • Complement to KSR1011 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
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KSR2011
KSR1011
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Untitled
Abstract: No abstract text available
Text: KSR2107 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R,=22KQ, R2=47KQ) • Complement to KSR1107 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
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KSR2107
KSR1107
100/iA
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transistor kd 2059
Abstract: KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SA1677 2SC4397
Text: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit
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2SA1677,
2SC4397
0D073Lj2
T-37-13
22ki2,
22ki2)
22kohms
22kohms)
2SA1677/2SC4397-appiled
2SA1677
transistor kd 2059
KD 2059
s2e transistor
NPN S2e
kd 616
transistor npn d 2058
2SC4397-appiled
2SC4397
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transistor npn d 2058
Abstract: k 2059 scr gate driver ic 2SA1677 2SC4397 s2e transistor
Text: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit
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0D073L
2SA1677,
2SC4397
T-37-Ã
22ki2,
22ki2)
22kohms
22kohms)
2SA1677/2SC4397-appiied
2SA1677
transistor npn d 2058
k 2059
scr gate driver ic
2SC4397
s2e transistor
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vc 150 inverter
Abstract: No abstract text available
Text: KSR2003 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias Resistor Built In • Switching circuit, Inverter, Interface circuit. Driver Circuit • Built in Mas Resistor (Rt*22kQ, R*-22kÜ) • Complement to KSR1003 ABSOLUTE MAXIMUM RATINGS (TA=25"C)
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KSR2003
KSR1003
vc 150 inverter
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10MHI
Abstract: KSR1008 KSR2008
Text: SAMSUNG SEMICONDUCTOR INC_ KSR2008 IME D | 7^4145 0007101 fl | PNP EPITAXIAL SILICON TRANSISTOR 77 3 7 13 - SWITCHING APPLICATION * - B ia s R e sis to r B u ilt In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=47KC1, R,=22KQ)
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71b4ma
KSR2008
KSR1008
10MHI
KSR1008
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KSR1208
Abstract: KSR2208
Text: SAMSUNG S EM I C ON D U CT OR INC 1 4 E O KSR2208 I 7^4142 0007111 3 I PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias R esistor B u ilt In r- 3i -\ 2> • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,»47Kn, R,=22KQ)
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71bm42
QQ0714T
KSR2208
KSR1208
O-82S
KSR1208
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Untitled
Abstract: No abstract text available
Text: KSR2003 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R e sisto r B u ilt In • Switching circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor(R, = 22KQ, R,=22KQ) • Complement to KSR1003 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
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KSR2003
KSR1003
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Untitled
Abstract: No abstract text available
Text: KSR1003 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is t o r B u ilt In TO-92 • Sw itching circuit, Inverter, Interface circuit Driver circuit • Built in bias R esistor(R ,= 22KQ , R ,=22 K G ) • Com plement to KSR2003 ABSOLUTE MAXIMUM RATINGS (Ta= 2S°C)
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KSR1003
KSR2003
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I3003
Abstract: KSR1207 KSR2207
Text: SAMSUNG SEMICONDUCTOR INC T-3S-H IME D § KSR1207 f 0007075 O NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=22KQ, R,=47Ktl)
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Q0Q707S
KSR1207
47Kil)
KSR2207
O-92S
i-22K-
I3003
KSR2207
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