Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR FC112 CORP SEE D 7 eH 7 0 7 b 0 0 0 7 3 0 2 1 T -3 S -II # N P N Epitaxial Planar S ilico n C o m p o site Transistor 2066 Switching Applications 3080 with Bias Resistances R1=22kQ, R2=22kO F ea tu res On-chip bias resistors (Ri = 22kQ,R2= 22kfl)
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FC112
22kfl)
FC112
2SC3396,
4139MO
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0007G
Abstract: KSR1103 KSR2103 Transistor z1 rp35 driver
Text: S A M S U N G SEMICONDUCTOR INC rp35-|V IME D KSR1103 | ì'ifc.MlMfi 0007G43 1 | NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter; Interface circuit Driver circuit • Built in bias Resistor (R,=22KÍÍ, R,=22Kfl)
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KSR1103
22Kft,
22Kfl)
KSR2103
OT-23
0007G
KSR2103
Transistor z1
rp35 driver
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 191S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package >Built in bias resistor (R1=22kfl, R2=22kfl) WOs Q62702-C2418 1=E1 2=B1 3=C2
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22kfl,
22kfl)
Q62702-C2418
OT-363
D15002b
BCR191S
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Untitled
Abstract: No abstract text available
Text: KSR2011 PNP EPITAXIAL SILICON TRANSISTO R SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R*22kfl) • Complement to K SR 1011 ABSOLUTE MAXIMUM RATINGS (TA«25t:)
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KSR2011
22kfl)
-10mA,
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Untitled
Abstract: No abstract text available
Text: I IME D I ^SAMSUNG S E M ICON DUC TOR INC KSR2203 I 000713*1 0 PNP EPITAXIAL SILICON TRANSISTOR - CT=37- >3 SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R =22K0, R1=22Kfl)
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KSR2203
71bm42
00O713\C^
KSR1203
O-92S
AM64ENT
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3079-2
Abstract: No abstract text available
Text: Ordering number: EN 3079 No.3079 SMiVO, F C l l l PNP Epitaxial Planar Silicon Composite Transistor i Switching Applications Features • On-chip bias resistors Ri = 22kfl,R2 = 22kQ • Composite type with 2 transistors contained in the CP package currently in use, improving the
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22kfl
2SA1342,
3079-2
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TRANSISTOR 2067
Abstract: No abstract text available
Text: SANYO S E MI CO ND UCTOR CÔRP SHE D 7‘ =H707b 0 00 737Ô T FC110 T-35-H # N PN Epitaxial Planar Silicon C om posite Transistor 2067 Switching Applications with Bias Resistances R 1=22kfl, R2=22kO 3078 F e a tu re s • On-chip bias resistors (Rj = 22k£l,R2= 22k£i)
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FC110
T-35-H
22kfl,
FC110
2SC3396,
TRANSISTOR 2067
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=22kfl, R2=22 kQ Pin Configuration BCR 141 WDs 1= B II co Q62702-C2258 Package O Marking Ordering Code LU II evi
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22kfl,
Q62702-C2258
OT-23
Q120734
B35bQS
Q12Q735
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR FC111 CORP 22E D 7Tî707t Q0D73Ô0 ñ T-37-/3 # PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications 3079 with Bias Resistances R1=22kfl, R2=22kO Features • On-chip bias resistors (Ri = 22kfl,R2= 22kQ) • Composite type with 2 transistors contained in the CP package currently in use, improving the
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FC111
Q0D73Ã
T-37-/3
22kfl,
22kfl
2SA1342,
4139MO
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Untitled
Abstract: No abstract text available
Text: Ordering num ber:EN3 0 7 8 SANYO i FG 110 No.3078 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features • On-chip bias resistors Ri = 22kfl,R2 = 22kfl • Composite type with 2 transistors contained in the CP package currently in use, improving the
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22kfl
22kfl)
2SC3396,
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Untitled
Abstract: No abstract text available
Text: KSR2203 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit. Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri =22kfl, Rj»22kQ) • Complement to KSR1203 A B S O LU T E MAXIMUM (RATINGS (TA=25t:)
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KSR2203
22kfl,
KSR1203
-10/A,
-10mA,
-100M
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Untitled
Abstract: No abstract text available
Text: KSR1103 NPN EPITAXIAL SILICON TRAN SISTO R SW ITCHING APPLICATION Bias Resistor Built in • Switching circuit, Inverter, Interface circuit. Driver Circuit • Built in bias Resistor (R t =22kfl, R 2=22]iii) • Complement to KSR2103 ABSO LU TE MAXIMUM RATINGS (T a= 2 5 'C )
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KSR1103
22kfl,
KSR2103
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BCR 191 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=22k£i, R2=22kfl Type Marking Ordering Code Pin Configuration BCR 191 WOs Q62702-C2264 1=B Package 2=E 3=C SOT-23
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22kfl)
Q62702-C2264
OT-23
fi235bD5
235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 196 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=47k£2, R2=22kfl Marking Ordering Code Pin Configuration BCR 196 WXs 1 =B Package UJ II <M UPON INQUIRY o II CO Type
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22kfl)
OT-23
6235bQS
D1B0634
a23St
0120B35
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727 Transistor power values
Abstract: No abstract text available
Text: SIEMENS BCR191S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in bias resistor (R1=22kß, R2=22kfl) Type BCR191S Marking Ordering Code Pin Configuration
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22kfl)
BCR191S
Q62702-C2418
OT-363
727 Transistor power values
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KSR1011
Abstract: KSR2011
Text: SAMSUNG IN C T - 3 5 ^ j l 4 E SEM ICONDUCTOR KSR1011 D | 7 ^ 4 1 4 2 0007035 T NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92 • S w itching Circuit, Inverter, interface circuit Driver circuit • B uilt in bias Resistor (R =22Kfl)
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T-S54
KSR1011
KSR2011
100nA,
KSR2011
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resistor
Abstract: KSR1203 KSR2203
Text: ^SAMSUNG S E M IC O N D U C TOR IME INC KSR2203 D I 0 0 0 7 1 3 *1 I I PNP EPITAXIAL SILICON TRANSISTOR - CT=37- >3 SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor(R =22K0, R1=22Kfl)
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KSR2203
71bm42
00O713\C^
KSR1203
O-92S
KSR2203
resistor
KSR1203
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 146 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=47kfl, R2=22kfl BCR 146 WLs 1 =B Q62702-C2260 Package 2=E It Pin Configuration CO Marking Ordering Code o Type
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47kfl,
22kfl)
Q62702-C2260
OT-23
S35b05
012D753
fl235bG5
12075M
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3450K
Abstract: 3850K NTCCF2012
Text: Sensors SURFACE MOUNTABLE CHIP TYPE FEATURES • Reversible. • Automatic mounting possible with the use of bulks, magazines or tapes. • Cost reduction of circuits by high-density packaging is possible. NTCCS SÉRIES FOR REFLOW SOLDERING CHARACTERISTICS
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NTCCS2012
NTCCF2012
NTCCS3216
NTCCF3216
140mW/25
NTCCF32164AH683KC
NTCCF32164CH104KC
NTCCF32164CH154KC
33kfl±
100kfi
3450K
3850K
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TC9187AN
Abstract: TC9187 TC9187AF
Text: T -77-Z I ELECTRONIC VOLUME LSI FOR 7-BAND GRAPHIC EQUALIZER. TC9187AN/AF is a system LSI, in which seven circuits of electronic volume for graphic equalizer are assembled into signal chip. . Each L 0'1 or RC ^ contains electronic volume for graphic equalizer of seven circuits.
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-77-Z
TC9187AN/AF
12dB/2dB
125Hz
250Hz
47jJF
22kfl
047yF
022/F
500Hz
TC9187AN
TC9187
TC9187AF
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Untitled
Abstract: No abstract text available
Text: H UNITRODE Low Power Current Mode Push-Pull PWM FEATURES PRELIMINARY DESCRIPTION 130 iA Typical Starting Current The UCC3808 is a family of BiCMOS push-pull, high-speed, low power, pulse width modulators. The UCC3808 contains all of the control and drive circuitry required for off-line or DC-to-DC fixed frequency current-mode
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UCC3808
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colpitts oscillator using 741
Abstract: SFG455A3 murata 455KHz ceramic filter TOKO 455KHz crystal filter TOKO 455KHz ceramic filter TOKO 455KHz filter Signetics NE602 SA615 TOKO 303LN murata SFG455A3 455KHz ceramic filter
Text: NAPC/PHILIPS SEMICOND b?E T> m b b 5 3 t124 0 0 3 3 7 3 0 0 T3 * S I C 3 Philips Semiconductors RF Communications Products Product specification High performance low power mixer FM IF system DESCRIPTION FEATURES The NE/SA615 is a high performance monolithic low-power FM IF system
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NE/SA615
NE/SA615
NE602
NE604A,
25MHz)
20-lead
dual-in-linSA615
45MHz
colpitts oscillator using 741
SFG455A3
murata 455KHz ceramic filter
TOKO 455KHz crystal filter
TOKO 455KHz ceramic filter
TOKO 455KHz filter
Signetics NE602
SA615
TOKO 303LN
murata SFG455A3 455KHz ceramic filter
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SAA7345
Abstract: tda 9344 CM 4200 JIS-C-6560 LTU 455 E 2 metal detector diagram PI QFP64 SAA7376 TDA1301 TDA1301T
Text: Philips Semiconductors Preliminary specifications Digital servo processor and Compact Disc decoder CD7 7.13 7.13.1 7.13.2 7.13.3 7.13.4 7.13.5 7.13.6 7.13.7 7.13.8 7.13.9 7.13.10 7.13.11 7.14 7.14.1 7.14.2 7.14.3 CONTENTS 1 FEA TU RES 2 GEN ERAL DESCRIPTION
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SAA7376
711032b
SAA7345
tda 9344
CM 4200
JIS-C-6560
LTU 455 E 2
metal detector diagram PI
QFP64
SAA7376
TDA1301
TDA1301T
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DS 09 1007 1012 D4
Abstract: 901 u 620 tg CW03 QPSK qam trans Modulator block diagram
Text: HSP50215 Semiconductor D a ta S h e e t J a n u a ry 1999 F ile N u m b e r 4 3 4 6 .4 Digital UpConverter Features The HSP50215 Digital UpConverter DUC is a QASK/FM modulator/FDM upconverter designed for high dynamic range applications such as cellular basestations. The DUC combines
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HSP50215
HSP50215
16-bit
DS 09 1007 1012 D4
901 u 620 tg
CW03
QPSK qam trans Modulator block diagram
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