Untitled
Abstract: No abstract text available
Text: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. INTERNATIONAL C M O S 37E D H March 1991 4640707 0D0043T 1 IS ICT PEEL 22CV10A CMOS Programmable Electrically Erasable Logic Device Featu res ^ ^ ^ ~<^~7 Architectural Flexibility — 132 product term x 44 input AND array
|
OCR Scan
|
0D0043T
22CV10A
12-configuration
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • > GOULD AM I CMOS Programmable Electrically Erasable Logic Device Product Preview * Sem iconductors PEEL22 C V 10 Z-15 Features — Variable product term distribution 8 to 16 per output for greater logic flexibility — Independently programmable 12-configuration
|
OCR Scan
|
PEEL22
12-configuration
105mA
24-pin
AmPAL22V10
PALC22V10
300-mil
PEEL22CV10Z-15â
PALC22V10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: •> G O U LD AMI »Semiconductors CHIOS Programmable Electrically Erasable Logic Device 22CV10Z Features — Variable product term distribution 8 to 16 per output for greater logic flexibility — Independently programmable 12-configuration I/O macrocells
|
OCR Scan
|
PEELra22CV10Z
12-configuration
24-pin
AmPAL22V10
PALC22V10
10-bit
22CV10Z
|
PDF
|
PEEL programming
Abstract: 22CV10Z-25 22CV10 22CV10A-10 PEEL22CV10 22CV10A PEEL 22CV10A-15 22CV10A-7 22GV10
Text: PEEL 22GV10 Z A M SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device i February 1993 Features General Description Advanced CMOS EEPROM Technology High Performance with Low Power Consumption The AMI PEEL22C V10(Z) is a CMOS Program m able
|
OCR Scan
|
22CV10
PEEL programming
22CV10Z-25
22CV10A-10
PEEL22CV10
22CV10A PEEL
22CV10A-15
22CV10A-7
22GV10
|
PDF
|
22CV10Z-25
Abstract: 22CV10Z-35 EEL22 PEELTM22CV10Z PEEL22CV
Text: GOUL D 4055916 Js GOULD SEMICONDUCTOR SEMICONDUCTOR p n in n EiZtmniZ DIV DIV 03E D | 03E MDSSTlb 10392 □ □ l D 3 ci5 D CMOS Programmable Electrically Erasable Logic Device Preliminary Data Sheet PEEL 22CV10Z Features — Variable product term distribution 8 to 16 per
|
OCR Scan
|
PEELTM22CV10Z
PEEL22CV10
22CV10Z-25
22CV10Z-35
EEL22
PEELTM22CV10Z
PEEL22CV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: iET , INC. PEEL 22CV1 OA-10/PEEL™22CV1 OA-15 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array — Up to 22 inputs and 10 outputs — Variable product term distribution 8 to
|
OCR Scan
|
22CV1
OA-10/PEELâ
OA-15
110mA
10-bit
|
PDF
|
22CV10Z
Abstract: No abstract text available
Text: S4E D 4ÔH0707 000107S 17b • ICT I C T INC , INC. PEEL 22CV10Z "Zero Power" CMOS Programmable Electrically Erasable Logic Device Features ■ Advanced CMOS EEPROM Technology ■ High Performance and Ultra-Low Power — tpD = 25ns, fmax=33.3MHz — Ice = 5mA at 1MHz
|
OCR Scan
|
H0707
000107S
22CV10Z
12-configuration
10-bit
22CV10Z
|
PDF
|
22CV10Z
Abstract: No abstract text available
Text: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features General Description The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,
|
OCR Scan
|
22CV10
PEEL22CV10
PEEL22CFigure
22CV10Z
|
PDF
|
Untitled
Abstract: No abstract text available
Text: •> g o u ld I t Semiconductors CM OS Programmable Electrically Erasable Logic Device PEEL 22CV10Z Features — Variable product term distribution 8 to 16 per output for greater logic flexibility — Independently programmable 12-configuration I/O macrocells
|
OCR Scan
|
22CV10Z
12-configuration
24-pin
AmPAL22V10
PALC22V10
10-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL C M O S 5SE D 4Ö407G7 GDD05D0 T Preliminary INTERNATIONAL CMOS TECHNOLOGY, INC. " P M H 3 - 4 7 PEEL*22CV1OZ "Zero Power” CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array
|
OCR Scan
|
407G7
GDD05D0
22CV1OZ
12-configuration
40MHz
10-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. March 1991 PEEL 22CV10A CMOS Programmable Electrically Erasable Logic Device Features • Advanced CMOS EEPROM Technology Architectural Flexibility — 132 product term x 44 input AND array — Up to 22 inputs and 10 outputs
|
OCR Scan
|
22CV10A
12-configuration
110mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: , INC._ PEEL 22CV10Z "Zero Power" CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array — Up to 22 inputs and 10 outputs — Variable product term distribution 8 to
|
OCR Scan
|
22CV10Z
12-configuration
200nA
10-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: , INC. PEEL 22CV10-25 CMOS Programmable Electrically Erasable Logic Device Features • Architectural Flexibility ■ Advanced CMOS EEPROM Technology — 132 product term x 44 input AND array — Up to 22 inputs and 10 outputs — Variable product term distribution 8 to
|
OCR Scan
|
22CV10-25
25MHz
Appl90%
10-bit
|
PDF
|
22CV10Z
Abstract: PEEL22CV 22CV10Z-25
Text: 4ÜE D GO UL D INC/ G O U L D A M I •> GOULD I s Semiconductors HQSS'ilb D G l E n ö À ■AMI CMOS Programmable Electrically Erasable Logic Device PEEL 22CV10Z T—46—19—07 Features — Variable product term distribution 8 to 16 per output for greater logic flexibility
|
OCR Scan
|
PEELTM22CV10Z
T--46--19--07
12-configuration
10-bit
001300b
PEELTM22GY10Z
22CV10Z
PEEL22CV
22CV10Z-25
|
PDF
|
|
22cv10
Abstract: No abstract text available
Text: PEEL 22CV10 Z AMI SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,
|
OCR Scan
|
22CV10
t22CV10
PEEL22CV10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: | = = | , INC._ PEEL 22CV10Z "Zero Power" CMOS Programmable Electrically Erasable Logic Device Features • Advanced CMOS EEPROM Technology ■ Architectural Flexibility — 132 product term x 44 input AND array — Up to 22 inputs and 10 outputs
|
OCR Scan
|
22CV10Z
12-configuration
200pA
10-bit
|
PDF
|
PEEL22CV10Z
Abstract: No abstract text available
Text: GOULD INC/ GOULD A M I •> GOULD A M I .«Semiconductors 4QE D MQSSRlb OQ13Oil 5 « A N I CMOS Programmable Electrically Erasable Logic Device Product Preview PEEL 22CV10Z-15 T -4 6 -1 9 -0 7 Features — Variable product term distribution 8 to 16 per
|
OCR Scan
|
OQ13Oil
PEELTM22CV10Z-15
105mA
PEEL22CV10Z
|
PDF
|
22CV10
Abstract: No abstract text available
Text: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description Advanced CMOS EEPROM Technology The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance,
|
OCR Scan
|
22CV10
200jiA
PEEL22CV10
PEEL22CVV10
480KH
22CV10CZ)
|
PDF
|