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    2222 DIODE Search Results

    2222 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    2222 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 5082-2222 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-C Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)6.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0


    Original     		PDF Min200

    m1b marking

    Abstract: MMBT2222 MMBT2222A 1N914 MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA
    Text: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage


    Original     		PDF MMBT2222LT1/D MMBT2222LT1 MMBT2222ALT1* 236AB) MMBT2222LT1/D* m1b marking MMBT2222 MMBT2222A 1N914 MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA

    m1b marking

    Abstract: 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA 1N914 SOT-23
    Text: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage


    Original     		PDF MMBT2222LT1/D MMBT2222LT1 MMBT2222ALT1* 236AB) MMBT2222LT1/D* m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA 1N914 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage


    Original     		PDF LMBT2222LT1G LMBT2222ALT1G

    transistor 2222a to-92

    Abstract: MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage


    Original     		PDF MMBT2222LT1 MMBT2222ALT1* 236AB) transistor 2222a to-92 MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23

    ECH84

    Abstract: ECH8401
    Text: Ordering number : ENN7609 ECH8401 N-Channel Silicon MOSFET ECH8401 Ultrahigh-Speed Switching Applications Preliminary Features unit : mm 2222 [ECH8401] 0.3 5 1 4 0.65 0.15 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.25


    Original     		PDF ENN7609 ECH8401 ECH8401] ECH84 ECH8401

    LM5045

    Abstract: smd diode 2222
    Text: User's Guide SNVA627B – January 2012 – Revised January 2014 AN-2222 LM5045 Based 720W Power Converter Utilizing Current-Doubler Topology on the Secondary 1 Introduction The LM5045 based 720W reference board is designed to evaluate the performance of the current doubler


    Original     		PDF SNVA627B AN-2222 LM5045 smd diode 2222

    rca 101m

    Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50


    Original     		PDF 2SC458K 2N3856A BC383L MPS3707 BC223A BC232A BC223 rca 101m Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402

    VN0605T

    Abstract: VN0610LL VN10LE VN10LM VN2222LL VN2222LM
    Text: VN10/0605/0610/2222 Series Siliconix NĆChannel EnhancementĆMode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM


    Original     		PDF VN10/0605/0610/2222 VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM VN0605T VN0610LL VN10LE VN10LM VN2222LL VN2222LM

    TO-237

    Abstract: vn0605t transistor VN10 VN10 application VN0605T 70212 VN2222LM 2222 400-125 VN10LE
    Text: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V


    Original     		PDF VN10/0605/0610/2222 VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM TO-237 vn0605t transistor VN10 VN10 application VN0605T 70212 VN2222LM 2222 400-125 VN10LE

    Untitled

    Abstract: No abstract text available
    Text: Lite-On Technology Corporation OFFICE : 90, Chien I Road, Chung Ho Taipei, Taiwan, R.O.C. TEL : +886-2-2222-6181 ~ 8 FAX :+886-2-2221-0660, +886-2-2221-2780,+886-2-2225-1518 LED HIGH POWER LTPL-P013MS30 DATA SHEET Preliminary Version: 0.1 Created Date: 2010/07/21


    Original     		PDF LTPL-P013MS30 EIA-471 BNC-OD-C131/A4

    Untitled

    Abstract: No abstract text available
    Text: Lite-On Technology Corporation OFFICE : 90, Chien I Road, Chung Ho Taipei, Taiwan, R.O.C. TEL : +886-2-2222-6181 ~ 8 FAX :+886-2-2221-0660, +886-2-2221-2780,+886-2-2225-1518 LED HIGH POWER LTPL-P013NS40 DATA SHEET Preliminary Version: 0.1 Created Date: 2010/07/21


    Original     		PDF LTPL-P013NS40 EIA-471 BNC-OD-C131/A4

    mosfet vn10

    Abstract: vn10 VN2222LM mosfet vn10lm
    Text: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V


    Original     		PDF VN10/0605/0610/2222 VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM mosfet vn10 vn10 mosfet vn10lm

    mosfet vn10lm

    Abstract: VN10 mosfet vn10 VN10LE VN0605T VN0610LL VN10LM VN2222LL VN2222LM S-52429-Rev
    Text: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V


    Original     		PDF VN10/0605/0610/2222 VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM mosfet vn10lm VN10 mosfet vn10 VN10LE VN0605T VN0610LL VN10LM VN2222LL VN2222LM S-52429-Rev

    Untitled

    Abstract: No abstract text available
    Text: Lite-On Technology Corporation OFFICE : 90, Chien I Road, Chung Ho Taipei, Taiwan, R.O.C. TEL : +886-2-2222-6181 ~ 8 FAX:+886-2-2221-0660, +886-2-2221-2780,+886-2-2225-1518 FAX HIGH POWER LED LTPL-P00DMS30 DATA SHEET LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only


    Original     		PDF LTPL-P00DMS30 EIA-471 BNC-OD-C131/A4

    LTPL-P00DWS57

    Abstract: LTPL-P00D LTPL-P00DWS LTPL-P00 CAS140B
    Text: Lite-On Technology Corporation OFFICE : 90, Chien I Road, Chung Ho Taipei, Taiwan, R.O.C. TEL : +886-2-2222-6181 ~ 8 FAX:+886-2-2221-0660, +886-2-2221-2780,+886-2-2225-1518 FAX HIGH POWER LED LTPL-P00DWS57 DATA SHEET LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only


    Original     		PDF LTPL-P00DWS57 EIA-471 LTPL-P00DWS57 BNC-OD-C131/A4 LTPL-P00D LTPL-P00DWS LTPL-P00 CAS140B

    PH 33D

    Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
    Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614


    Original     		PDF BY558 BY558 OD115 BY578 BY578 BY584 OD61A 1N4004 BY614 PH 33D PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40

    MOV 270/20

    Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
    Text: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003


    Original     		PDF

    circuit diagram of mosfet based smps power supply

    Abstract: AC to DC smps circuit diagram pages TEA1504 BZX79C12V Bc547 TRANSISTOR SMPS CIRCUIT DIAGRAM USING TRANSISTORS flyback 200w philips tea 1400 Philips RSM 2222 036 CE423V
    Text: APPLICATION NOTE 200W SMPS with TEA1504 AN98011 Philips Semiconductors 200W SMPS with TEA1504 Application Note AN98011 Abstract This application note briefly describes a 200 Watt Switched Mode Power Supply SMPS for a typical TV or monitor application based upon the TEA1504 controller. The power supply is based on a flyback topology and


    Original     		PDF TEA1504 AN98011 TEA1504 BC547 DIL14 A7805 circuit diagram of mosfet based smps power supply AC to DC smps circuit diagram pages BZX79C12V Bc547 TRANSISTOR SMPS CIRCUIT DIAGRAM USING TRANSISTORS flyback 200w philips tea 1400 Philips RSM 2222 036 CE423V

    CFL inverter circuit schematic diagram

    Abstract: 3 phase inverter schematic diagram led lamp 230v circuit diagram ELECTRONIC BALLAST 13W circuit diagram half bridge inverter schematic 3 CFL inverter circuit schematic diagram philips cfl internal circuit 13w cfl circuit BALLAST low loss philips PHU2N60E
    Text: APPLICATION NOTE CFL 13W demo PCB with UBA2021 for integrated lamp-ballast designs AN98091 Philips Semiconductors Philips Semiconductors APPLICATION NOTE Application Note Abstract A description is given of a 13W electronic CFL ballast SMD demo board PR38922 and leaded demo board


    Original     		PDF UBA2021 AN98091 PR38922 PR39001) 230Vrms PHU2N60 PHU2N50) 170mA CFL inverter circuit schematic diagram 3 phase inverter schematic diagram led lamp 230v circuit diagram ELECTRONIC BALLAST 13W circuit diagram half bridge inverter schematic 3 CFL inverter circuit schematic diagram philips cfl internal circuit 13w cfl circuit BALLAST low loss philips PHU2N60E

    mmbt2222A

    Abstract: MMBT2222ALT1 marking QE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBT2222LT1 MMBT2222ALT1* General Purpose T ran sisto rs NPN Silicon ’M otorola Preferred Device MAXIMUM RATINGS Symbol 2222 2222A Unit Collector-Emitter Voltage VCEO 30 40 Vdc Collector-Base Voltage v CBO 60 75 Vdc


    OCR Scan     		PDF MMBT2222LT1 MMBT2222ALT1* O-236AB) b3tj75SS MMBT2222ALT1 R307b mmbt2222A MMBT2222ALT1 marking QE

    KH 2222

    Abstract: hp 2222 equivalent of 2222 NPN 2222 A BT2222 2222AM
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B T2222LT1 M M BT2222ALT1* G eneral Purpose Transistors NPN Silicon colle3ctor 'M o to ro la P referred Device 1 BASE Jl§ 2 EMITTER MAXIMUM RATINGS Rating Symbol 2222 2222A Unit C o lle c to r-E m itte r Voltage VCEO


    OCR Scan     		PDF T2222LT1 BT2222ALT1* OT-23 O-236AB) BT2222ALT1 KH 2222 hp 2222 equivalent of 2222 NPN 2222 A BT2222 2222AM

    1N 2907A

    Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
    Text: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series


    OCR Scan     		PDF FMMT2907 FMMT2907A FMMT2222 OT-23 FMMT2907A FMMT2369A 1N 2907A BSS65 A12 marking marking H6 sot 23 PNP 2907a SOT23 marking FMMT2907A 2907a BCV72

    mpq2222a

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Q uad General Purpose T ran sisto rs M PQ 2222 M P Q 2222A * NPN Silicon La x J l A J ‘Motorola Preferred Device NPN I M I , ,1,Y ! UJ m liJ UJ li! LiJ Li 1 M AXIM U M R ATINGS Rating Symbol MPQ2222 Collector-Emitter Voltage


    OCR Scan     		PDF MPQ2222 MPQ2222A O-116 MPQ2222 mpq2222a