MIL-PRF-55342
Abstract: No abstract text available
Text: 2208 Thin Film Chip Resistor Standard Grade, Surface Mount, Solderable PROTECTIVE ENCAPSULANT FEATURES PRECISION THIN FILM RESISTOR 99.6% ALUMINA CHIP WRAPAROUND TERMINATIONS PRETINNED PERFORMANCE CHARACTERISTICS Resistance Range 1 Tolerances (2) Maximum Power
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MIL-PRF-55342
Mil-Std-202,
MIL-PRF-55342
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Untitled
Abstract: No abstract text available
Text: M55342/05 Thin Film Chip Resistor 2208 Size, Surface Mount, Solderable PROTECTIVE ENCAPSULANT FEATURES PRECISION THIN FILM RESISTOR 99.6% ALUMINA CHIP WRAPAROUND TERMINATIONS PRETINNED • Tolerances to ± 0.1% • Operating temperature range : -55° C to +150° C
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M55342/05
MIL-PRF-55342.
MIL-PRF-55342
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2208CP
Abstract: No abstract text available
Text: GLASS PASSIVATION 2208 Thick Film Chip Resistor Standard Grade, Wraparound WRAPAROUND TERMINATIONS RESISTOR FILM 96% ALUMINA CHIP PERFORMANCE CHARACTERISTICS 1W-40MW 0.5%,1%, 2%, 5%,10% ±100, ±200, ±300 72.7°C/W 750 mW 175 Volts 1 +/- 0.5% limited availability
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W-40MW
2208CP
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100MHz SMD RF Mixer
Abstract: RF mixer 920 Mhz gilbert cell differential pair siemens capacitors Siemens A 1458 4GHZ FM MODULATOR 5GHz RF mixer B 647 AC transistor direct pm modulation circuit DCS1800
Text: ICs for Communications Mixer and IF Vector Modulator PMB 2208 Version 1.2 Preliminary Specification 10.97 Edition 10.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995. All Rights Reserved.
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P-TSSOP-24
100MHz SMD RF Mixer
RF mixer 920 Mhz
gilbert cell differential pair
siemens capacitors
Siemens A 1458
4GHZ FM MODULATOR
5GHz RF mixer
B 647 AC transistor
direct pm modulation circuit
DCS1800
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Untitled
Abstract: No abstract text available
Text: M55342/05 Thick Film Chip Resistor 2208 Size, Surface Mount, Solderable FEATURES GLASS PASSIVATION RESISTOR FILM 96% ALUMINA CHIP WRAPAROUND TERMINATIONS PRETINNED • Tolerances to ±1% • Operating temperature range : -55° C to +150° C • Pretinned Sn60 nickel barrier
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M55342/05
MIL-PRF-55342.
MIL-PRF-55342
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Untitled
Abstract: No abstract text available
Text: PROTECTIVE ENCAPSULANT 2208 Thin Film Chip Resistor WRAPAROUND TERMINATIONS Standard Grade, Wraparound PRECISION THIN FILM 99.6% ALUMINA PERFORMANCE CHARACTERISTICS 5.6W- 2.2MW 0.1%, 0.25%, 0.5%,1%, 2%, 5% ±25, ±50, ±100 ppm 87.8°C/W 750 mW 175 Volts CURRENT NOISE
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100ohms.
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DCS1800
Abstract: PMB2208 219CC
Text: Wireless Components Mixer and IF Vector Modulator PMB 2208 Version V1.2 Specification August 1999 preliminary CONFIDENTIAL Revision History: Current Version: 08.99 Previous Version:Data Sheet Page in previous Version Page (in current Version) Subjects (major changes since last revision)
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Untitled
Abstract: No abstract text available
Text: 2208 Thick Film Chip Resistor Standard Grade, Surface Mount, Solderable GLASS PASSIVATION FEATURES RESISTOR FILM 96% ALUMINA CHIP WRAPAROUND TERMINATIONS PRETINNED • Tolerances to ± 0.5% • Operating temperature range : -55° C to +150° C • Pretinned Sn60 nickel barrier
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MIL-PRF-55342
W-40MW
Mil-Std-202,
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led matrix 16X16
Abstract: MAX4355 MAX4355ECQ Nippon capacitors
Text: 19-2208; Rev 0; 10/01 16 x 16 Nonblocking Video Crosspoint Switch with I/O Buffers Applications Features ♦ 16 ✕ 16 Nonblocking Matrix with Buffered Inputs and Outputs ♦ Operates from ±3V, ±5V, or +5V Supplies ♦ Individually Programmable Output Buffer Gain
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14MHz
-62dB
-110dB
195mW
MAX4355ECQ
MAX4355
led matrix 16X16
MAX4355
MAX4355ECQ
Nippon capacitors
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Nippon capacitors
Abstract: No abstract text available
Text: 19-2208; Rev 0; 10/01 16 x 16 Nonblocking Video Crosspoint Switch with I/O Buffers Applications Features ♦ 16 ✕ 16 Nonblocking Matrix with Buffered Inputs and Outputs ♦ Operates from ±3V, ±5V, or +5V Supplies ♦ Individually Programmable Output Buffer Gain
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MAX4355
MAX4355
Nippon capacitors
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Nippon capacitors
Abstract: No abstract text available
Text: 19-2208; Rev 0; 10/01 16 x 16 Nonblocking Video Crosspoint Switch with I/O Buffers Applications Features ♦ 16 ✕ 16 Nonblocking Matrix with Buffered Inputs and Outputs ♦ Operates from ±3V, ±5V, or +5V Supplies ♦ Individually Programmable Output Buffer Gain
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MAX4355
MAX4355EC
14x14x1
21-0085B
Nippon capacitors
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XR2208CP
Abstract: XR-2208 XR-2208CP cir 2272 XR-2208 CIRCUIT XR2208M applications xR-2208 2208CP application for xr-2208 XR2208P
Text: XR-2208 Operational Multiplier GENERAL DESCRIPTION PIN ASSIGNMENT The XR-2208 operational multiplier combines a fourquadrant analog multiplier or modulator , a high fre quency buffer amplifier, and an operational amplifier in a monolithic circuit that is ideally suited for both analog
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XR-2208
XR-210
XR2208CP
XR-2208CP
cir 2272
XR-2208 CIRCUIT
XR2208M
applications xR-2208
2208CP
application for xr-2208
XR2208P
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XR2208CP
Abstract: applications xR-2208 XR-2208 XR-2208CP XR2208M XR2208CN XR2208P XR-2208P
Text: J T E X A XR-2208 R Operational Multiplier GENERAL DESCRIPTION The XR-2208 operational multiplier combines a fourquadrant analog multiplier or modulator , a high fre quency buffer amplifier, and an operational amplifier in a monolithic circuit that is ideally suited for both analog
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XR-2208
XR-2208
XR-210
XR-215
XR2208CP
applications xR-2208
XR-2208CP
XR2208M
XR2208CN
XR2208P
XR-2208P
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Untitled
Abstract: No abstract text available
Text: SIEMENS Mixer and IF Vector Modulator PMB 2208 B ipolarIC Version 1.2 1 Overview 1.1 Features • Direct quadrature modulator and up/downconversion mixer on one chip • Modulator: LO input frequency range from 200MHz to 550MHz corresponds to an output frequency
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200MHz
550MHz
100MHz
275MHz
P-TSSOP-24
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r03003
Abstract: MPS-202201-71 MPS-202201 mps2022
Text: MPS-202201 -71 100 TO 2000 MHz GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY !•—H 098 FEATURES -1 -n*> a5 25 I I I / “ 2- PL +34 dBm TYPICAL IP3 +22 dBm TYPICAL P1dB (654)
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MPS-202201
MPS-202201-71
R0-3003
PS-202201-71-2
r03003
mps2022
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MPS-252708-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +41 dBm TYPICAL IP3 +27.5 dBm TYPICAL P1dB 11.5 dB TYPICAL GAIN +12 VOLT OPERATION HIGH POWER ADDED EFFICIENCY
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MPS-252708-85
MPS-252708-85
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Untitled
Abstract: No abstract text available
Text: MwT-13 18GHz HIGH POWER GaAs MESFETCHIP MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +27 dBm P-1 dB AT 12 GHz • 7 dB GAIN AT 12 GHz • HIGH THIRD ORDER INTERCEPT • IDEAL FOR BALANCED AMPLIFIER CIRCUITS
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MwT-13
18GHz
MwT-13
at125
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mps2027
Abstract: MPS-202708-85
Text: PRELIMINARY MPS-202708-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +39 dBm TYPICAL IP3 • +27.0 dBm TYPICAL P1dB • 10.5 dB TYPICAL GAIN • +12 VOLT OPERATION
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MPS-202708-85
MPS-202708-85
MPS-202706-3S
mps2027
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MPS-202708-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +39 dBm TYPICAL IP3 • +27.0 dBm TYPICAL P1dB • 10.5 dB TYPICAL GAIN • +12 VOLT OPERATION
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MPS-202708-85
MPS-202708-85
bl241GG
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XR-2211 IC
Abstract: application for xr-2208 XR-2211 application XR-2208 applications xR-2208 XR-2208 CIRCUIT XR-2211 pll xr2208 XR-2211 sine wave SCHEMATIC
Text: £*EX4R Application Note AN-11 A Universal Sine Wave Converter Using the XR-2208 and the XR-2211 INTRODUCTION sine converter is then applied to a variable-gain amplifier which sets the desired output amplitude. Since the oscillator section of the PLL is always running, the circuit also
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AN-11
XR-2208
XR-2211
XR-2211 IC
application for xr-2208
XR-2211 application
applications xR-2208
XR-2208 CIRCUIT
XR-2211 pll
xr2208
XR-2211
sine wave SCHEMATIC
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RO3003
Abstract: mps2024
Text: MPS-202409-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY oeo_| D im ensions in inches FEATURES 1-52 and (mm) INPUT'* • +36 dBm TYPICAL IP3 IT • +24 dBm TYPICAL P1dB
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MPS-202409-85
MPS-202409-85
RO3003
mps2024
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MPS-252708-85 1.7 TO 2.5 GHz SELF-BIASED GaAs FET AMPLIFIER 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY D frn « n*lo n * n incfte» oeo ^ 52j FEATURES ] and mm INPUT- • +41 dBm TYPICAL IP3 • +27.5 dBm TYPICAL P1dB
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MPS-252708-85
MATCH-13
MPS-252708-85
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Untitled
Abstract: No abstract text available
Text: MwT-102 2-18 GHz MMIC AMPLIFIER CHIP MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 25 dB TYPICAL REVERSE ISOLATION • ±0.75 dB TYPICAL OUTPUT POWER FLATNESS • 7.5 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBe TYPICAL SECOND HARMONICS AT Psat
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MwT-102
MwT-102-GFP
100strates,
-F110-
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Untitled
Abstract: No abstract text available
Text: MwT-101 2-8 GHz MMIC AMPLIFIER CHIP MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 30 dB TYPICAL REVERSE ISOLATION • 40.6 dB TYPICAL OUTPUT POWER FLATNESS • 3 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBc TYPICAL SECOND HARMONICS AT Psat
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MwT-101
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