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    2204B Search Results

    2204B Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    JM38510/12204BGA Renesas Electronics Corporation Single Operational Amplifier, Internally Compensated, Precision, High Slew Rate Visit Renesas Electronics Corporation
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    2204B Price and Stock

    Wima FKP1R012204B00MSSD

    CAP FILM 2200PF 20% 1.25KVDC RAD
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    DigiKey FKP1R012204B00MSSD Bulk 16,431 1
    • 1 $0.48
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    • 100 $0.2289
    • 1000 $0.19074
    • 10000 $0.17674
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    Susumu Co Ltd RG3216P-2204-B-T1

    RES 2.2M OHM 0.1% 1/4W 1206
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    DigiKey RG3216P-2204-B-T1 Reel 13,000 1,000
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    Wima FKP1R012204B00KSSD

    FKP 1 2200 PF 1250 VDC 5X11X18 P
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    DigiKey FKP1R012204B00KSSD Bulk 12,204 1
    • 1 $0.72
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    Newark FKP1R012204B00KSSD Bulk 4,425 5
    • 1 $0.759
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    • 1000 $0.3
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    Bristol Electronics FKP1R012204B00KSSD 375
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    TTI FKP1R012204B00KSSD Bulk 3,800 100
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    TME FKP1R012204B00KSSD 4,800
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    Chip1Stop FKP1R012204B00KSSD 7,219
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    • 100 $0.327
    • 1000 $0.198
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    TAW Electronics, Inc. FKP1R012204B00JSSD

    FKP 1 2200 pF 1250 VDC 5x11x18 P
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    DigiKey FKP1R012204B00JSSD Bulk 8,407 10
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    • 10 $0.495
    • 100 $0.4155
    • 1000 $0.3533
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    TAW Electronics, Inc. MKP1J022204B00KSSD

    MKP 10 0.022 UF 630 VDC 5X11X18
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    DigiKey MKP1J022204B00KSSD Bulk 8,200 10
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    • 100 $0.417
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    Find more 2204B price and stock on Findchips.com

    2204B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transformer 0-12v

    Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
    Text: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF151 175MHz VRF151 30MHz, 175MHz, MRF151 transformer 0-12v J101 0-12V 2204B MRF151 Transistor C2 Unelco J101

    VRF141

    Abstract: 28v 30MHZ MRF141 2204B
    Text: VRF141 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF141 175MHz VRF141 30MHz, 175MHz, MRF141 28v 30MHZ MRF141 2204B

    MRF151G

    Abstract: VRF151G 2204B
    Text: VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast


    Original     		PDF VRF151G 175MHz VRF151G 175MHz. 175MHz, MRF151G MRF151G 2204B

    blf177

    Abstract: 2204B MRF151 VRF152
    Text: VRF152 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF152 175MHz VRF152 30MHz, 175MHz, MRF151/ BLF177/ SD2941 blf177 2204B MRF151

    balun 50 ohm

    Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar
    Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL 80MHz VRF154FL 100MHz 30MHz, MRF154 balun 50 ohm 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 trifilar

    MOTOROLA circuit for mrf150

    Abstract: motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B
    Text: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics


    Original     		PDF MRF150/D MRF150 MOTOROLA circuit for mrf150 motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B

    MRF141

    Abstract: G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors
    Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    Original     		PDF MRF141/D MRF141 MRF141 G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics


    Original     		PDF MRF140/D MRF140 MRF140/D*

    RF800

    Abstract: MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A
    Text: ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted. Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS


    Original     		PDF P-244 RF800 MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A

    transformer 0-12v

    Abstract: ATC 4400
    Text: VRF190E G VRF190EMP(G) 100V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF190E is a thermally-enhanced version of the VRF190. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original     		PDF VRF190E VRF190EMP 150MHz VRF190. M174A 30MHz, 150MHz, SD3931-10 Complian800 transformer 0-12v ATC 4400

    MRF148A

    Abstract: No abstract text available
    Text: ^Etni-Conduatoi ZPioaucti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF148A Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz.


    Original     		PDF MRF148A 175MHz. 30MHz MIL-STD-1311 2204B, MRF148A

    Transistor J550

    Abstract: VK200-20/4B choke vk200 input output npn 547 transistor "30 mhz" driver Amplifier vk200 1N4997 2204B MRF426 J550
    Text: Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —


    Original     		PDF MRF426/D MRF426 Transistor J550 VK200-20/4B choke vk200 input output npn 547 transistor "30 mhz" driver Amplifier vk200 1N4997 2204B MRF426 J550

    Untitled

    Abstract: No abstract text available
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz, MRF154

    VK200-4B

    Abstract: diode 4937 J101 VRF151 0-12V 2204B MRF151
    Text: VRF151 PRELIMINARY 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF151 175MHz VRF151 30MHz, 175MHz, MRF151 VK200-4B diode 4937 J101 0-12V 2204B MRF151

    723 voltage regulator

    Abstract: RL1009-5820-97-D1 10k trimpot vertical metal clad mica capacitor MRF157 10k trimpot 15 turn 0312d IN5357A MC1723 117nH
    Text: VRF157FL PRELIMINARY 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF157FL 80MHz VRF157FL 30MHz, MRF157 723 voltage regulator RL1009-5820-97-D1 10k trimpot vertical metal clad mica capacitor MRF157 10k trimpot 15 turn 0312d IN5357A MC1723 117nH

    723 voltage regulator

    Abstract: IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 VRF157FL RL1009-5820-97-D1
    Text: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		PDF VRF157FL 80MHz VRF157FL 30MHz, MRF157 723 voltage regulator IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 RL1009-5820-97-D1

    Nippon capacitors

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M RF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF140 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics


    OCR Scan     		PDF RF140/D MRF140 Nippon capacitors

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    RF MOSFET CLASS AB

    Abstract: AN211-A motorola bipolar transistor data manual
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


    OCR Scan     		PDF

    MRF406

    Abstract: MRF406 MOTOROLA 20WPEP
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 20 W PEP - 3 0 M H z RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N RF POWER TRANSISTOR . . . designed p r im a r ily fo r a p p lic a tio n as a pow er lin e a r a m p lifie r fro m 2 .0 to 30 M Hz. • S p e cifie d 12.5 V o lt, 3 0 M H z C h ara cteristics O u tp u t Power = 20 W ÌPEP)


    OCR Scan     		PDF MRF406 MRF406 MRF406 MOTOROLA 20WPEP

    TIC 136 Transistor

    Abstract: mrf412
    Text: MOTOROLA SC ÎXSTRS/R "flT ]>F|k3l.72Si| 007flT71 5 FJ 89D 78971 6 3 6 7 2 5 4 M O T O R O L A SC XSTRS/R F t MOTOROLA - 3 D 3 SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 70 W (PEP) — 30 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed primarily for applications as a high-power amplifier


    OCR Scan     		PDF 007flT71 MRF412 TIC 136 Transistor mrf412

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts


    OCR Scan     		PDF

    MRF429MP

    Abstract: MRF429-MP MRF429 MRF-429
    Text: MOTOROLA SEM IC O N D U C T O R MRF429 MRF429MP TECHNICAL DATA The RF Line 150 W LINEAR 30 MHz RF POWER TRANSISTORS N P N SILIC O N NPN SILICON RF POWER TRANSISTORS . . d e s ig n e d p r im a rily fo r h ig h -v o lt a g e a p p lic a t io n s a s a h ig h p o w e r lin e a r a m p lifie r fro m 2.0 to 3 0 M H z . Id e a l fo r m a r in e a n d


    OCR Scan     		PDF MRF429 MRF429MP MRF429, MRF429MP MRF429-MP MRF-429

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode D e s ig n e d fo r p o w e r a m p lifie r a p p lic a tio n s in in d u s tria l, c o m m e rc ia l a n d a m a te u r ra dio e q u ip m e n t to 175 M H z.


    OCR Scan     		PDF MRF148