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    2202 TRANSISTOR Search Results

    2202 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2202 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2202

    Abstract: transistor SMD FLO 14 gilbert cell differential pair DCS-1800 GPS05866 gilbert mixer qpsk modulator 4 to 6 GHz T2201-XV10-S1-7600 transistor bx smd
    Text: ICs for Communications Mixer DC - 2.5 GHz and Vector Modulator 1.4 - 2.5 GHz PMB 2202 Version 1.0 Preliminary Specification 08.95 T2201-XV10-S1-7600 PMB 2202 Revision History: Current Version: 08.95 Previous Version: none Page Page in previous (in new Version


    Original     		PDF T2201-XV10-S1-7600 GPS05866 P-TSSOP-24 transistor 2202 transistor SMD FLO 14 gilbert cell differential pair DCS-1800 GPS05866 gilbert mixer qpsk modulator 4 to 6 GHz T2201-XV10-S1-7600 transistor bx smd

    9829 A

    Abstract: TARF2202 .7E8
    Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2202 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2202 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF TARF2202 50-ohm TAHB09) 30GHz TARF2202 1900MHz 100MHz 9829 A .7E8

    siemens rs 1007

    Abstract: 2202 DCS-1800 PMB2201 PMB2202 nf schaltungen gilbert cell differential pair
    Text: ICs for Communications Mixer DC - 2.5GHz and Vector Modulator 1.4 - 2.5GHz PMB 2202 Version 1.2 Preliminary Data Sheet 08.97 Edition 08.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995.


    Original     		PDF P-TSSOP-24 siemens rs 1007 2202 DCS-1800 PMB2201 PMB2202 nf schaltungen gilbert cell differential pair

    Untitled

    Abstract: No abstract text available
    Text: A580-2202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)220ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)165m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF A580-2202 Freq250k time10u

    Untitled

    Abstract: No abstract text available
    Text: 1814-2202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)225ö V(BR)CBO (V)250 I(C) Max. (A)10 Absolute Max. Power Diss. (W)44 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF Freq30M time400n

    STK4152

    Abstract: STK4152II transistor 38W en220 STK4152 II 30Wmin
    Text: Ordering number: EN2202B Thick Film Hybrid IC STK4152II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.


    Original     		PDF EN2202B STK4152II STK4102II STK4152II) STK4101V STK4101II STK4152II] STK4152 STK4152II transistor 38W en220 STK4152 II 30Wmin

    STK4152II

    Abstract: en220 STK4152 STK4152 II transistor 38W 4040 pin-compatible 50Hz sine wave filter circuit SAMPLE TRANSISTOR stk4152-ii AN 22022
    Text: Ordering number: EN2202B Thick Film Hybrid IC STK4152II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.


    Original     		PDF EN2202B STK4152II STK4102II STK4152II) STK4101V STK4101II STK4152II] STK4152II en220 STK4152 STK4152 II transistor 38W 4040 pin-compatible 50Hz sine wave filter circuit SAMPLE TRANSISTOR stk4152-ii AN 22022

    transistor 2202

    Abstract: 3001 transistor 2202 TRANSISTOR SRA2202M
    Text: SRA2202M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF SRA2202M O-92M KSR-I012-000 -10mA -10mA, transistor 2202 3001 transistor 2202 TRANSISTOR SRA2202M

    SRA2202M

    Abstract: No abstract text available
    Text: SRA2202M PNP Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and


    Original     		PDF SRA2202M O-92M KSD-R0B013-000 SRA2202M

    Untitled

    Abstract: No abstract text available
    Text: SRA2202M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF SRA2202M O-92M KSR-I012-001

    Untitled

    Abstract: No abstract text available
    Text: SRA2202M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF SRA2202M SRA2202M O-92M KSR-I012-002 KSR-I012-002

    SRA2202M

    Abstract: No abstract text available
    Text: SRA2202M PNP Silicon Transistor PIN Connection Descriptions • Sw it ching applicat ion 2. OUT • I nt erface circuit and driver circuit applicat ion Features 3. IN • Wit h built- in bias resist ors • Sim plify circuit design • Reduce a quant it y of part s and


    Original     		PDF SRA2202M KSD-R0B013-000 SRA2202M

    PRE-AMPLIFIER

    Abstract: LM1202
    Text: A pril 1999 LM2202 230 MHz Video Amplifier System General Description The LM 2202 is a very high frequency video a m plifier system intended for use in high resolution m onochrom e o r RGB color m onitor applications. In addition to the w ideband video a m plifier the LM 2202 contains a gated differential input black


    OCR Scan     		PDF LM2202 LM2202M LM2202N PRE-AMPLIFIER LM1202

    XR-2203

    Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
    Text: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­


    OCR Scan     		PDF XR-220172/3/4 XR-2201, XR-2202, XR-2203, XR-2204 500mA XR-1568M XR-1568/XR-1468C XR-1468/1568 XR-2203 XR-2203CP XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204

    LM2402T

    Abstract: lm2402 U12402 023p 2n5770 equivalent LM2202 P6201 CRT MONITOR SCHEMATIC DIAGRAM signal path designer
    Text: Semiconductor LM2402 Monolithic Triple 3 ns CRT Driver • Well m atched w ith LM 2202 video pream ps General Description The LM 2402 is an integrated high voltage C R T driver circuit designed for use in high resolution co lo r m onitor applica­ tions. The IC contains three high input im pedance, w ide


    OCR Scan     		PDF LM2402 LM2402 T0-220 LM2402T U12402 023p 2n5770 equivalent LM2202 P6201 CRT MONITOR SCHEMATIC DIAGRAM signal path designer

    2402 transistor

    Abstract: "101016" ers 2202 1 Tektronix 2402 CS 2402
    Text: Semiconductor LM2402 Monolithic Triple 3 ns CRT Driver • Well m atched with LM 2202 video pream ps General Description The LM 2402 is an integrated high voltage C R T driver circuit designed fo r use in high resolution color m onitor a pplica­ tions. The 1C contains three high input im pedance, w ide


    OCR Scan     		PDF LM2402 2402 transistor "101016" ers 2202 1 Tektronix 2402 CS 2402

    LM 072

    Abstract: LM2402
    Text: Semiconductor LM2402 Monolithic Triple 3 ns CRT Driver • Well m atched with LM 2202 video pream ps General Description The LM 2402 is an integrated high voltage C R T driver circuit designed fo r use in high resolution color m onitor a pplica­ tions. The 1C contains three high input im pedance, w ide


    OCR Scan     		PDF LM2402 wi0-272-9959 LM 072

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CMPNTS 3ME M447 5ÛH D □ G Q 7 b M ci b M H P A MINIATURE FIBER OPTIC LOGIC LINK HEW LETT PACKARD HFBR-1202 HFBR-2202 HFBR-4202 Features • DC TO 5 M BAU D DATA RATE • M A X IM U M L IN K L E N G T H 625 Metres Guaranteed 1600 Metres (Typical)


    OCR Scan     		PDF HFBR-1202 HFBR-2202 HFBR-4202 FBR-1202 FBR-2202

    HP3312A

    Abstract: nf schaltungen DCS-1800
    Text: S IE M E N S if'o I V v fn r 'o m m i in ir o t in n c IU l V / U M M M U I M V / U I I V / I I O Mixer DC - 2.5 GHz and Vector Modulator 1.4 - 2.5 GHz PMB 2202 Version 1.0 Preliminary Specification / • 08.95 T2201-XV10-S1 -7600 Edition 08.95 Ausgabe 08.95


    OCR Scan     		PDF T2201-XV10-S1 X10pf its07006 HP3312A nf schaltungen DCS-1800

    HFET-2202

    Abstract: NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE HPAC-100A S2112
    Text: - C OM PON EN TS HFET-2202 GaAs FETs LOW NOISE MICROWAVE GaAS FET H E W L E T T P A C KA R D • Features LOW NOISE FIGURE 1.1 dB Typical NF at 4 GHz, 1.4 dB Maximum 1.9 dB Typical NF at 8 GHz a HIGH ASSOCIATED GAIN 13.6 dB Typical Ga at 4 GHz, 12.0 dB Minimum


    OCR Scan     		PDF HFET-2202 HFET-2202 NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE HPAC-100A S2112

    HFBR-1201

    Abstract: hfbr-2201 SIECOR Fiber Optic cable HFBR-1202 HFBR-2202 transistor b 1202 RS-458 HP 2202 screw cores UNS thread HFBR2202
    Text: HEWLETT-PACKARD/ CMPNTS 3ME M447 5ÛH D □ G Q 7 b M ci b M H P A MINIATURE FIBER OPTIC LOGIC LINK HEW LETT PACKARD HFBR-1202 HFBR-2202 HFBR-4202 Features • DC TO 5 M BAU D DATA RATE • M A X IM U M L IN K L E N G T H 625 Metres Guaranteed 1600 Metres (Typical)


    OCR Scan     		PDF M4475Ã HFBR-1202 HFBR-2202 HFBR-4202 HFBR-1202 HFBR-2202 HFBR-1201 hfbr-2201 SIECOR Fiber Optic cable transistor b 1202 RS-458 HP 2202 screw cores UNS thread HFBR2202

    Texas Instruments GPS

    Abstract: TPS2202 TPS2202IDF TPS2202IDFLE
    Text: TPS2202IDF DUAL-SLOT PC CARD POWER-INTERFACE SWITCH FOR SERIAL PCMCIA CONTROLLER SLVS103 - DECEMBER 1994 DF PACKAGE TOP VIEW Fully Integrated Vqc and Vpp Switching for Dual-Slot PC Card Interface Saves PCMCIA Controller I/O Leads by Utilizing 3>Lead Serial Interface


    OCR Scan     		PDF TPS2202IDF SLVS103 30-Pin 160-m MII-STD-883C, Texas Instruments GPS TPS2202 TPS2202IDF TPS2202IDFLE

    bu 515

    Abstract: BU208A Q68000-A494 Q68000-A5163 T-25 PICTURE TUBE BU 110 BU208
    Text: . 2SC D • Ö235b05 QQQMÖ4Q ! ■ ISIEG BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIENGESELLSCHAF V84Ö v ~ r - 3 3 - < n BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high


    OCR Scan     		PDF 0235bQS Q68000-A494 Q68000-A5163 bu 515 BU208A Q68000-A494 Q68000-A5163 T-25 PICTURE TUBE BU 110 BU208

    bu 2225

    Abstract: BU208A BU 102
    Text: 25C D • 023SbQS QQGMÔ4Q I M S I E G , BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF V84Ô 0 -7 ^ 3 3 -0 7 BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high


    OCR Scan     		PDF 023SbQS 8000-A fl23Sb05 bu 2225 BU208A BU 102