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    2201H Search Results

    2201H Result Highlights (2)

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    68002-201HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Single Row, 1 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    TPS7H2201HKR/EM Texas Instruments Radiation hardness assured 1.5-V to 7-V, 6-A load switch 16-CFP 25 to 25 Visit Texas Instruments Buy
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    2201H Price and Stock

    JRH Electronics 805-004-12ZNU12-201HA

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    JRH Electronics 805-003-22C12-201HA

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    JRH Electronics 805-003-01Z112-201HF

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    JRH Electronics 805-003-01ZB12-201HE

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    2201H Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2201-H Bourns Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR TORD HI AMP 10UH HORZ Original PDF
    2201-H-RC Bourns Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR TORD HI AMP 10UH HORZ Original PDF

    2201H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4kw marking

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V


    Original     		PDF DS05-50308-2E MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 59-ball MB84VD22280FA/80FE/90FA/90FE F0311 4kw marking

    FPT-48P-M19

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


    Original     		PDF DS05-20904-2E MBM29DL32TF/BF-70 MBM29DL32TF/BF MBM29DL32TF/BF F0305 FPT-48P-M19

    MBM29BS64LF

    Abstract: MBM29BS64LF-18 MBM29BT64LF-18
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed


    Original     		PDF DS05-20916-1E MBM29BS/BT64LF-18/25 MBM29BS/BT64LF 60-ball MBM29BS/ BT64LF-25 MBM29BT64LF-18 MBM29BS64LF-18 F0403 MBM29BS64LF MBM29BS64LF-18

    Untitled

    Abstract: No abstract text available
    Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		PDF F0305

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original     		PDF DS05-20892-1E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball MBM29PDD322TE/BE

    29DL32BF

    Abstract: MBM29DL32
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF 70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


    Original     		PDF MBM29DL32TF/BF MBM29DL32TF/BF 29DL32BF MBM29DL32

    Untitled

    Abstract: No abstract text available
    Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words


    Original     		PDF M29DW640F TSOP48 24Mbit

    JS28F00am29

    Abstract: PC28F00BM29EWHA PC28F00AM29EWLA pc28f00am29ew JS28F00AM29EWxx JS28F00AM29EW pc28f00am29 JS28F00AM29EWHA JS28F512M29 RC28F256M29EWLA
    Text: 256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx


    Original     		PDF 256Mb, 512Mb, JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, JS28F00am29 PC28F00BM29EWHA PC28F00AM29EWLA pc28f00am29ew JS28F00AM29EWxx JS28F00AM29EW pc28f00am29 JS28F00AM29EWHA JS28F512M29 RC28F256M29EWLA

    4kw marking

    Abstract: No abstract text available
    Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		PDF F0307 4kw marking

    MARKING HRA

    Abstract: 4kw marking MARKING SA70
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.8E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD22180FA-70/MB84VD22190FA-70 MB84VD22180FM-70/MB84VD22190FM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V


    Original     		PDF MB84VD22180FA-70/MB84VD22190FA-70 MB84VD22180FM-70/MB84VD22190FM-70 59-ball 84VD22180FA/VD22190FA/VD22180FM/VD22190FM MARKING HRA 4kw marking MARKING SA70

    S29GL128S

    Abstract: S29GL512S S29GL01GS GL512S S29GL256S GL256S s29gl128s10tfiyyx JESD68-01 GL01GS S29GL01GS11
    Text: GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S 1 Gbit 512 Mbit 256 Mbit 128 Mbit 128 Mbyte (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S MirrorBit® Family Cover Sheet CMOS 3.0 Volt Core with Versatile I/O Data Sheet


    Original     		PDF S29GL01GS S29GL512S S29GL256S S29GL128S S29GL128S GL512S GL256S s29gl128s10tfiyyx JESD68-01 GL01GS S29GL01GS11

    101R

    Abstract: 120R LV065MU S29GL064A
    Text: Am29LV641MH/L Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV641M H/L and is the factory-recommended migration path. Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV641MH/L S29GL064A Am29LV641M 101R 120R LV065MU

    FPT-48P-M19

    Abstract: MBM29PL65LM-90 Diode SA91
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M 4M x 16 BIT MirrorFlashTM MBM29PL65LM-90/10 • DESCRIPTION MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase.


    Original     		PDF DS05-20903-1E MBM29PL65LM-90/10 MBM29PL65LM 48-pin MBM29PL65for F0312 FPT-48P-M19 MBM29PL65LM-90 Diode SA91

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL

    4kw marking

    Abstract: MBM29DL640E
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance


    Original     		PDF DS05-50211-2E MB84VD23280EA-90/MB84VD23280EE-90 101-ball 4kw marking MBM29DL640E

    32 KB SRAM

    Abstract: MBM29DL640E
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash


    Original     		PDF DS05-50209-2E MB84VD23381EJ-90 32 KB SRAM MBM29DL640E

    DS05-20905-1E

    Abstract: BGA-48P-M13 FPT-48P-M19 MBM29DL64DF MBM29DL64DF-70
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-1E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL64DF-70 • DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be


    Original     		PDF DS05-20905-1E MBM29DL64DF-70 MBM29DL64DF 48-pin 48-ball F0303 DS05-20905-1E BGA-48P-M13 FPT-48P-M19 MBM29DL64DF-70

    M29W128GL

    Abstract: M29W128GH70 M29W128G M29W128GL7
    Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)


    Original     		PDF M29W128GH M29W128GL 128-Mbit 64-byte M29128GH/L: Kbytes/64 M29W128GL M29W128GH70 M29W128G M29W128GL7

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed


    Original     		PDF MBM29QM96DF-65/80 MBM29QM96DF 96M-bit, 80-ball F0212

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-1E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE/651UE -90/12 • GENERAL DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and


    Original     		PDF DS05-20882-1E MBM29LV650UE/651UE 64M-bit, D-63303 F9912

    10001XXXXX

    Abstract: No abstract text available
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S29PL-J 16-Bit) S29PL-J 10001XXXXX

    16550 uart national

    Abstract: National SEMICONDUCTOR GAL16V8 isa bus schematics NS486 MD217 dp83800 AN-1106 DP83850 DP83856 DP83858
    Text: National Semiconductor Application Note AN-1106 Mike Heilbron Brad Kennedy Bill Lee Steve Rees May 1998 Overview 2.0 Why Have Management? This document describes an example implementation of a management module for a 100BASE-X Ethernet repeater. It assumes a basic familiarity with the DP83850, DP83856


    Original     		PDF AN-1106 100BASE-X DP83850, DP83856 NS486 16550 uart national National SEMICONDUCTOR GAL16V8 isa bus schematics MD217 dp83800 AN-1106 DP83850 DP83856 DP83858

    q001

    Abstract: M29W256GH
    Text: 256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • VPP/WP# pin protection – Protects first or last block regardless of block protection settings • Software protection – Volatile protection


    Original     		PDF 256Mb: M29W256GH, M29W256GL 60ns1, 32-word 64-byte) 256-word 128-Kbytes 64-Kwords 09005aef84bd3b68 q001 M29W256GH

    2216H

    Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
    Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.


    OCR Scan     		PDF TMP95CS54 16-Bit TMP95CS54F TMP95CS54 100-pin 900/H TLCS-90/900 2216H XZ MC11 LQFP100-P-1414-0 TMP95CS54F