Untitled
Abstract: No abstract text available
Text: V i s h ay Int e rt e c h nology, Inc . ceramic capacitors Single-layer Capacitors AC Rated Ceramic Disc Capacitors Product Family Voltage Capacitance Tolerance Class Temperature Characteristics - 9.0 nF to 100 nF ± 20 % 2 Y5V Z5U 275 VAC - 4.7 nF to 22 nF
|
Original
|
VMN-SG2172-1207
|
PDF
|
MD735L
Abstract: 502a 355B EL lamp low voltage clf circuit MD735L502A diode MARKING CODE 917 DS1608BL 2N3906 BAS21LT1
Text: Typical Output Waveform Load B* 47 nF 22 nF 100Ω 10kΩ * Load B approximates a 5in2 EL lamp. Absolute Maximum Ratings Parameter Supply voltage Operating range Withstand range Enable Voltage Output Voltage CLF Voltage Operating temperature Storage temperature
|
Original
|
|
PDF
|
nf 742
Abstract: 680/nf 742
Text: Ceramic Capacitors Leaded multilayer, Mono-axial series Dielectric Series 2222 . . Rated DC voltage Capacitance range pF/nF NPO X7R Z5U 740 . 50 V 741 . 50 V 742 . 50 V 10 pF 12 15 18 22 27 33 39 47 56 68 82 100 120 150 180 220 270 330
|
Original
|
|
PDF
|
A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology
Abstract: No abstract text available
Text: 200 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 22, NO. 4, APRIL 2012 A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Christophe Masse, William Vaillancourt, and
|
Original
|
90-nm
A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology
|
PDF
|
ADF4159
Abstract: No abstract text available
Text: 4-Channel, 24 GHz, Receiver Downconverter ADF5904 Data Sheet FEATURES GENERAL DESCRIPTION Integrated baluns for single-ended receiver Rx inputs and local oscillator (LO) input Rx channel gain: 22 dB Noise figure (NF): 10 dB P1dB: −10 dBm LO input range: −8 dBm to +5 dBm
|
Original
|
ADF5904
ADF5904
D12885-0-3/15
ADF4159
|
PDF
|
60Ghz
Abstract: FMM5716X ED-4701
Text: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for
|
Original
|
FMM5716X
60GHz
FMM5716X
1906B,
ED-4701
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for
|
Original
|
FMM5716X
60GHz
FMM5716X
1906B,
|
PDF
|
MD58-0005
Abstract: No abstract text available
Text: Preliminary Specifications Integrated Transceiver 2.1 - 2.7 GHz MD58-0005 V1.A Features ● ● ● ● ● ● ● ● ● SSOP-28 Fully Integrated Transmit and Receive Functions Operates Over +3 V to +5 V Supply Low 22 mA Receive Current Gain = 15 dB High Receiver Dynamic Range (IIP3 = -2 dBm, SSB NF = 4dB)
|
Original
|
MD58-0005
SSOP-28
28-Lead
MD58-0005
46F-4658,
|
PDF
|
TSE 151
Abstract: BB502C DSA003644
Text: BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz
|
Original
|
BB502C
ADE-208-810C
200pF,
OT-343mod)
BB502C
TSE 151
DSA003644
|
PDF
|
BB502M
Abstract: DSA003644
Text: BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz
|
Original
|
BB502M
ADE-208-809C
200pF,
OT-143Rmod)
BB502M
DSA003644
|
PDF
|
marking r4 SOT343
Abstract: BGA427
Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1 Noise figure NF = 2.2 dB at 1.8 GHz
|
Original
|
BGA427
25-Technologie
VPS05605
EHA07378
OT343
Aug-02-2001
marking r4 SOT343
BGA427
|
PDF
|
marking r4 SOT343
Abstract: bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948
Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1 Noise figure NF = 2.2 dB at 1.8 GHz
|
Original
|
BGA427
25-Technologie
VPS05605
EHA07378
OT343
marking r4 SOT343
bo 139
INFINEON marking BGA
BGA420
BGA427
E6327
nf 948
|
PDF
|
PHA-22
Abstract: E8527D TB-566-50 TB561 TB-566-75 AH22a DL1020 N5242A N9020A pl322
Text: Dual Matched MMIC Amplifier 50Ω PHA-22+ 0.05 to 1.5 GHz The Big Deal • Dual matched amplifier for push-pull & balanced amplifiers • High IP2 and IP3 • May be used as a replacement to WJ AH22a,b CASE STYLE: DL1020 Product Overview Mini-Circuits PHA-22+ is a dual matched wideband amplifier fabricated using advanced E-PHEMT technology, offering high dynamic range High IP3 and Low NF for use in 50 and 75 ohm applications. Exceptionally high IP2 has been demonstrated in wideband 50 and 75 ohm amplifiers evaluation boards. Combining
|
Original
|
PHA-22+
AH22a
DL1020
PHA-22
E8527D
TB-566-50
TB561
TB-566-75
DL1020
N5242A
N9020A
pl322
|
PDF
|
LT4275AIDDE
Abstract: NO STUFF COMPONENT fdn8601 749022016 FDMC86102 FDMQ8203 SD490 sd4-90 LT4275BIDDE LT4275
Text: 4 3 9 13 15 14 J1 1 2 3 4 5 6 7 8 19 21 20 22 24 23 SS-7188S-A-NF ECO 12 D- 10 TD 11 D+ 9 D- 7 TD 8 D+ 6 D- 4 TD 5 D+ 3 D- 1 TD 2 D+ XTX X+ XTX X+ XTX X+ XTX X+ 1 2 3 4 5 6 7 8 DATA2 RT1 75 RT2 75 RT3 75 RT4 75 RT5 75 RT6 75 RT7 75 RT8 75 RV1 SD4-90 OPT RV2
|
Original
|
7V-57V
SS-7188S-A-NF
LT4275XIDDE
LT4275AIDDE
NO STUFF COMPONENT
fdn8601
749022016
FDMC86102
FDMQ8203
SD490
sd4-90
LT4275BIDDE
LT4275
|
PDF
|
|
|
Thomson-CSF POLYESTER capacitors
Abstract: cpm50b CPM83 nf 0102 thomson polypropylene film capacitors transistor Bc 287 Thomson-CSF POLYESTER capacitors TPC Thomson-CSF passive components nf 430 Thomson capacitors bf
Text: Metallized polyester film dielectric capacitors Contents Page Comparative table of the plastic film dielectric characteristics 4 Characteristics of the metallized polyester film dielectric capacitors 5 Type selection guide 10 How to order 11 Types & taping
|
Original
|
CPM-83)
CPM85)
CPM50)
CPM13)
CPM72)
Thomson-CSF POLYESTER capacitors
cpm50b
CPM83
nf 0102
thomson polypropylene film capacitors
transistor Bc 287
Thomson-CSF POLYESTER capacitors TPC
Thomson-CSF passive components
nf 430
Thomson capacitors bf
|
PDF
|
MCCA001399
Abstract: capacitor
Text: Soft Terminal MLCC Soft Termination Capacitors Dimensions Table Size 0603 1608 L (mm) W (mm) 1.6 ±0.2 0.8 ±0.1 0.8 ±0.07 S - 1.6 +0.2 / -0.1 0.8 +0.15 / -0.1 0.8 ±0.15 / -0.1 X - 0.5 ±0.1 H - 0.6 ±0.1 A - 0.8 ±0.1 B - 1.25 ±0.1 D # 0.85 ±0.1 T -
|
Original
|
element14
MCCA001399
capacitor
|
PDF
|
B3787
Abstract: B37950K 32101-801 B37872K1104K0
Text: Multilayer Ceramic Capacitors Chip X7R Ordering code system B37941 K 5 102 K 60 Packaging 60 62 70 72 01 ^ ^ ^ ^ ^ cardboard tape, 180-mm reel blister tape, 180-mm reel cardboard tape, 330-mm reel blister tape, 330-mm reel bulk case Internal coding Capacitance tolerance
|
Original
|
B37941
180-mm
330-mm
KKE0186-U
KKE0189-J
KKE0190-M
KKE0191-V
B3787
B37950K
32101-801
B37872K1104K0
|
PDF
|
AgPd
Abstract: EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES capacitor 180 nF B37872 B37941 KKE0308-1 KKE0329-N KKE0485-5-E B37872k5563 B37956
Text: Multilayer ceramic capacitors Chip capacitors, X7R Date: October 2006 Data Sheet ã EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited. Multilayer ceramic capacitors
|
Original
|
B37941
180-mm
330-mm
AgPd
EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES
capacitor 180 nF
B37872
B37941
KKE0308-1
KKE0329-N
KKE0485-5-E
B37872k5563
B37956
|
PDF
|
philips ceramic capacitors
Abstract: Philips z5u ceramic axial capacitors philips PA06-A
Text: Leaded Ceramic Multilayer Capacitors Mono-axial Series NPO, X7R, Z5U, Y5V NPO 10 b F . 15 22 33 47 68 It» 120 150 180 220 270 330 390 470 560 680 820 1.0 nF 1.2 1.5 1.8 2.2 2.7 3,3 3.9 4.7 100V 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 20
|
OCR Scan
|
PA06-A
philips ceramic capacitors
Philips z5u
ceramic axial capacitors philips
PA06-A
|
PDF
|
cr20-000v
Abstract: No abstract text available
Text: CONDENSATEURS HAUTE TENSION HT 72 HIGH VOLTAGE CAPACITORS Diélectrique Com posite im prégné résine époxy CARACTERISTIQUES GENERALES GENERAL CHARACTERISTICS - 5 5 C + 1 2 5 :!C « 50. K M C 50.10 4 te m p é ra tu re d 'u tilisation Technologie Armatures m é'alliques, non inductif
|
OCR Scan
|
|
PDF
|
HT97
Abstract: mf pf uf nf capacitor FL CAPACITOR 680 MF cp022
Text: HT 97 HT 97 pn> CONDENSATEURS HAUTE TENSION HIGH VOLTAGE CAPACITORS Diélectrique GENERAL CHARACTERISTICS CARACTERISTIQUES GENERALES - 5 5 C + 12 5 C Tem pérature d'utilisatio n T e c h n o lo g ie Arnnctures métalliques, non inductit Tg S à 1 k h z O pe ratin g te m p e ra tu re
|
OCR Scan
|
PREMOU00
HT97
mf pf uf nf capacitor
FL CAPACITOR 680 MF
cp022
|
PDF
|
7NF15
Abstract: p 55 nf nf 27 HT96
Text: CONDENSATEURS HAUTE TENSION HT 96 HIG H VOLTAGE CAPACITORS Diélectrique CARACTERISTIQUES GENERALES - 55 Température d'utilisation Technologie A’rncîj/es rnélaiiiques. non inducfif •''oiJé Wesire époxy Operating temperature P T f g Sat 1 kHz' Insulation resistance under 5 X Vpc
|
OCR Scan
|
|
PDF
|
PMR 64 Capacitors
Abstract: p 55 nf
Text: PMR 64 PMA64 CONDENSATEURS POLYCARBONATE METALLISE METALLIZED POLYCARBONATE CAPACITORS CARACTERISTIQUES GENERALES _ 55 C +125 C Température d'u tilis a tio n _ < 20.10 4 Tg g a 1 kHz_ pour C r i _ ï pF Tg S à 100 Hz D iélectrique Poi'/carbon^e -
|
OCR Scan
|
PMA64
PMR 64 Capacitors
p 55 nf
|
PDF
|
Thomson-CSF POLYESTER capacitors
Abstract: 100nK63 BF014
Text: Contents Page Comparative table of the plastic film dielectric characteristics 4 Characteristics of the metallized polyester film dielectric capacitors 5 Type selection guide 10 How to order 11 Types & taping Radial le a d s -B F CPM-83 - B H (CPM-N) - BT (CPM85)
|
OCR Scan
|
CPM-83)
CPM85)
CPM50)
CPM13)
CPM72)
Thomson-CSF POLYESTER capacitors
100nK63
BF014
|
PDF
|
