Q62702-C2264
Abstract: No abstract text available
Text: PNP Silicon Digital Transistor BCR 191 ● Switching circuit, inverter, interface circuit, driver circuit ● Built-in bias resistor R1 = 22 kΩ, R2 = 22 kΩ 2 3 1 Type BCR 191 Marking WOs Ordering Code (8-mm tape) Pin Configuration 1 2 3 Q62702-C2264
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Q62702-C2264
OT-23
Q62702-C2264
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marking 702 sot23
Abstract: 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23
Text: New Marking Codes SOT23 New Marking Codes SOT23 SOT23 Types from Hamburg, Hazel Grove and Nijmegen without a vendor code will be changed in their marking to a two digit product code and a one digit vendor code. The vendor code indicates the location of the assembly,
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BSR18A
marking 702 sot23
702 sot23
SP SOT23
ON5258
marking code 10 sot23
marking code p12 sot23
MARKING CODE 13 SOT23
Philips SOT23 code marking
ON5257
marking code 702 SOT23
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XTAL 50MHZ
Abstract: PL671-21-XXXTC-R SMD INDUCTOR Marking Code
Text: Preliminary PL671-21/-22 PicoEMI T M Programmable Spread Spectrum Clock FEATURES 2 3 6 GND 5 CLK0 4 VDD SOT23-6L 3 1 XOUT 2 PDB^/REFOut 3 NC 4 8 VDD 7 NC 6 CLK0 5 GND 8 VDD 7 NC 6 CLK0 5 GND SOP-8L 6 GND 5 CLK0 4 VDD SOT23-6L XIN/FIN 1 XOUT 2 CSEL^ 3 NC
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PL671-21/-22
OT23-6L
PL671-22
PL671-21
10MHz
40MHz
200MHz
XTAL 50MHZ
PL671-21-XXXTC-R
SMD INDUCTOR Marking Code
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MARKING W3 SOT23 TRANSISTOR
Abstract: marking code ce SOT23 TRANSISTOR SMD MARKING CODES PMBTA44 MARKING CODE SMD IC smd transistor marking 26 NXP TRANSISTOR SMD MARKING CODE SOT23
Text: PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PMBTA44
O-236AB)
AEC-Q101
PMBTA44
MARKING W3 SOT23 TRANSISTOR
marking code ce SOT23
TRANSISTOR SMD MARKING CODES
MARKING CODE SMD IC
smd transistor marking 26
NXP TRANSISTOR SMD MARKING CODE SOT23
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Untitled
Abstract: No abstract text available
Text: MMBZ5V6AL - MMBZ33VAL 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS Features Mechanical Data • Dual TVS in Common Anode Configuration • Case: SOT23 • 24W/40W Peak Power Dissipation Rating @ 1.0ms • Case Material: Molded Plastic “Green” Molding Compound.
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MMBZ33VAL
4W/40W
225mW
AEC-Q101
J-STD-020
MIL-STD-202,
42dge
DS30306
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PESD2CAN
Abstract: 6R SMD MARKING CODE NXP PESD2CAN 6R SOT23
Text: PESD2CAN CAN bus ESD protection diode Rev. 01 — 22 December 2006 Product data sheet 1. Product profile 1.1 General description PESD2CAN in a small SOT23 Surface-Mounted Device SMD plastic package designed to protect two automotive Controller Area Network (CAN) bus lines from the damage
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TK10417
Abstract: TK10417M
Text: TK10417M POWER AMPLIFIER FEATURES APPLICATIONS ! ! ! ! ! ! ! Speaker Driver for Portable Equipment ! Headphone Driver ! Toys Very Wide Operating Voltage VCC = 1.8 to 5.5 V Very Low Supply Current Very Low Standby Current Miniature Package (SOT23L-8) Adjustable Voltage Gain (VG1 = 0 to 40 dB)
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TK10417M
OT23L-8)
TK10417M
OT23L-8
Tap375
IC-231-TK11031
0798O0
TK10417
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TK10417
Abstract: TK10417M cout
Text: TK10417 POWER AMPLIFIER FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ Speaker Driver for Portable Equipment ■ Headphone Driver ■ Toys Very Wide Operating Voltage VCC = 1.8 to 5.5 V Very Low Supply Current Very Low Standby Current Miniature Package (SOT23L-8)
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TK10417
OT23L-8)
TK10417M
TK10417M
OT23L-8
IC-231-TK11031
0798O0
TK10417
cout
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Zener diode smd marking codes
Abstract: zener 6v8 ph smd code marking PE sot23 C 6V2 PH smd diode marking code ug BZB84-B39 ph c 8v2 NXP SMD ZENER DIODE MARKING CODE BZB84-C2V4 BZB84-C3V3
Text: BZB84 series Dual Zener diodes Rev. 02 — 23 February 2009 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOT23 TO-236AB small Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power
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BZB84
O-236AB)
AEC-Q101
Zener diode smd marking codes
zener 6v8 ph
smd code marking PE sot23
C 6V2 PH
smd diode marking code ug
BZB84-B39
ph c 8v2
NXP SMD ZENER DIODE MARKING CODE
BZB84-C2V4
BZB84-C3V3
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C18 ph zener
Abstract: 3V3 -ZENER DIODE ph zener 6v8 ph Zener diode smd marking code C24 c10 ph zener DIODE smd 434 ZENER 2V7 smd code marking PE sot23 smd diode marking code u9 smd dual diode code 68
Text: BZB84 series Dual Zener diodes Rev. 03 — 9 June 2009 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOT23 TO-236AB small Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power
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BZB84
O-236AB)
AEC-Q101
C18 ph zener
3V3 -ZENER DIODE ph
zener 6v8 ph
Zener diode smd marking code C24
c10 ph zener
DIODE smd 434
ZENER 2V7
smd code marking PE sot23
smd diode marking code u9
smd dual diode code 68
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transistor smd code marking 420
Abstract: No abstract text available
Text: Product specification PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV30XN
O-236AB)
transistor smd code marking 420
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Untitled
Abstract: No abstract text available
Text: MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance Case: SOT23 Low Gate Threshold Voltage Low Input Capacitance Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Fast Switching Speed
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MMBF170
J-STD-020
MIL-STD-202,
AEC-Q101
DS30104
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PDTB123ET
Abstract: BC807 PDTB123E PDTB123EK PDTB123ES PDTD123ET
Text: PDTB123ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 3 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor RET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PDTB123ET
O-236AB)
PDTD123ET.
AEC-Q101
BC807
PDTB123ET
PDTB123E
PDTB123EK
PDTB123ES
PDTD123ET
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Untitled
Abstract: No abstract text available
Text: FS01 SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 400 V ÷ 600 V TO-92 FS01xxxA FEATURES Glass/passivated die junctions SOT-223 (FS01xxxN) K G A A K SOT23-3L A G Low current SCR Low thermal resistance
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FS01xxxA)
OT-223
FS01xxxN)
OT23-3L
2011/65/EU
2002/96/EC
J-STD-020,
FS01xxxL)
OT-223
/SOT23-3L)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV185XN
O-236AB)
gate-sou15
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Untitled
Abstract: No abstract text available
Text: FS01 SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 400 V ÷ 600 V TO-92 FS01xxxA FEATURES Glass/passivated die junctions SOT-223 (FS01xxxN) K G A A K SOT23-3L A G Low current SCR Low thermal resistance
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FS01xxxA)
OT-223
FS01xxxN)
OT23-3L
2011/65/EU
2002/96/EC
J-STD-020,
FS01xxxL)
OT-223
/SOT23-3L)
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FP6736S6
Abstract: FP6736 FP6736S5P FP6736S6G marking code C4 Sot 23-5 FP6736S9 sot-23-6 marking STEP UP DC DC SOT-23-6 FP6736S9G FP6736S6P
Text: FP6736 fitipower integrated technology lnc. 1.4MHz SOT23 Current-Mode Step-Up DC/DC Converter Description Features The FP6736 is a current-mode, pulse-width modulation, step-up DC/DC converter. The built-in high voltage N-channel MOSFET allows FP6736 for step- up applications with up to 30V output voltage,
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FP6736
FP6736
3V/200mA
OT-23-6
TSOT-23-6
MO-193-C.
FP6736-1
OT-23-5
FP6736S6
FP6736S5P
FP6736S6G
marking code C4 Sot 23-5
FP6736S9
sot-23-6 marking
STEP UP DC DC SOT-23-6
FP6736S9G
FP6736S6P
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DIODE smd marking CODE NZ
Abstract: MARKING CODE 16 transistor sot23 smd code marking HD SOT23
Text: SO T2 3 PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV30XN
O-236AB)
DIODE smd marking CODE NZ
MARKING CODE 16 transistor sot23
smd code marking HD SOT23
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Untitled
Abstract: No abstract text available
Text: ZXMP3F30FH P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance • Fast Switching Speed 80mΩ@ VGS = -10V -4.0A • 4.5V Gate Drive Capability 140mΩ@ VGS =-4.5V ⎯ • Thermally Enhanced SOT23 package •
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ZXMP3F30FH
AEC-Q101
DS33579
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bzx84
Abstract: No abstract text available
Text: SO T2 3 BZX84 series Voltage regulator diodes Rev. 6 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 1 % (BZX84-A), 2 % (BZX84-B) and
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BZX84
O-236AB)
BZX84-A)
BZX84-B)
BZX84-C)
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BZX84 series nxp
Abstract: No abstract text available
Text: SO T2 3 BZX84 series Voltage regulator diodes Rev. 5 — 18 September 2013 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 1 % (BZX84-A), 2 % (BZX84-B) and
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BZX84
O-236AB)
BZX84-A)
BZX84-B)
BZX84-C)
BZX84 series nxp
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Untitled
Abstract: No abstract text available
Text: SMBTA14/ MMBTA14 NPN Silicon Darlington Transistor • High DC current gain • High collector current 2 3 • Low collector-emitter saturation voltage Type SMBTA14/ MMBTA14 Marking s1N 1 Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter
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SMBTA14/
MMBTA14
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Untitled
Abstract: No abstract text available
Text: SMBTA42/MMBTA42 NPN Silicon High-Voltage Transistors • High breakdown voltage • Low collector-emitter saturation voltage 2 3 • Complementary types: 1 SMBTA92 / MMBTA92 PNP Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E Package SOT23 3=C
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SMBTA42/MMBTA42
SMBTA92
MMBTA92
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=22kfl, R2=22 kQ Pin Configuration BCR 141 WDs 1= B II co Q62702-C2258 Package O Marking Ordering Code LU II evi
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OCR Scan
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22kfl,
Q62702-C2258
OT-23
Q120734
B35bQS
Q12Q735
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