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    21N50 Price and Stock

    Kyocera AVX Components NB21N50104JBB

    THERM NTC 100KOHM 4160K 0603
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    Nisshinbo Micro Devices R1121N501B-TR-FE

    IC REG LINEAR 5V 150MA SOT23-5
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    Infineon Technologies AG SPB21N50C3ATMA1

    MOSFET N-CH 560V 21A TO263-3
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    Infineon Technologies AG SPP21N50C3XKSA1

    MOSFET N-CH 500V 21A TO220-3
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    DigiKey SPP21N50C3XKSA1 Tube 1,905 1
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    Rochester Electronics LLC SPA21N50C3XKSA1

    HIGH POWER_LEGACY
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    21N50 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    21_N-50-3-11/133_NE HUBER+SUHNER 21_N-50-3-11/133_NE Original PDF

    21N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    21N50Q

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH 21N50Q IXTT 21N50Q Power MOSFETs Q-Class VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR


    Original     		PDF 21N50Q 21N50Q O-247 O-268 O-268

    IXFH21N50Q

    Abstract: No abstract text available
    Text: IXFH 21N50Q IXFT 21N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 21N50Q 065B1 728B1 123B1 728B1 IXFH21N50Q

    3350c

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A IDM


    Original     		PDF 21N50Q O-247 O-268 3350c

    21N50F

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 21N50F VDSS IXFT 21N50F ID25 RDS on = 500 V = 21A Ω = 250mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr


    Original     		PDF 21N50F O-247 728B1

    Untitled

    Abstract: No abstract text available
    Text: MegaMOSTMFET VDSS IXTH / IXTM 21N50 IXTH / IXTM 24N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original     		PDF 21N50 24N50 O-247 O-204

    Untitled

    Abstract: No abstract text available
    Text: VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω IXFH 21N50Q IXFT 21N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 21N50Q O-247 065B1 728B1 123B1 728B1

    3350c

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A IDM


    Original     		PDF 21N50Q O-247 O-268 3350c

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A Maximum Ratings


    Original     		PDF 21N50Q 21N50Q O-247 O-268 O-268AA

    21N50Q

    Abstract: No abstract text available
    Text: IXFH 21N50Q IXFT 21N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 21 A ID25 RDS on = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 21N50Q O-268 728B1 21N50Q

    21n50c3

    Abstract: SPB21N50C3 21N50C P-TO220-3-31 Q67040-S4585 S4565 SPA21N50C3 SPI21N50C3 SPP21N50C3 SMD TRANSISTOR MARKING 6c
    Text: 21N50C3, 21N50C3 21N50C3, 21N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		PDF SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 21n50c3 SPB21N50C3 21N50C P-TO220-3-31 Q67040-S4585 S4565 SPA21N50C3 SPI21N50C3 SPP21N50C3 SMD TRANSISTOR MARKING 6c

    21N50C3

    Abstract: No abstract text available
    Text: 21N50C3 21N50C3, 21N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF SPP21N50C3 SPI21N50C3, SPA21N50C3 PG-TO-220-3-31: P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 SPI21N50C3 21N50C3

    21n50c3

    Abstract: PG-TO220FP spp21n50c3
    Text: 21N50C3 21N50C3, 21N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P G-TO262 PG-TO220FP PG-TO220 • Periodic avalanche rated


    Original     		PDF SPP21N50C3 SPI21N50C3, SPA21N50C3 PG-TO220FP G-TO262 PG-TO220 SPI21N50C3 SPA21N50C3 PG-TO220 21n50c3

    21n50c3

    Abstract: TRANSISTOR SMD 2x t AN-TO220-3-31-01 S4565 s4585 SPA21N50C3 SPB21N50C3 SPI21N50C3 SPP21N50C3 21N50C
    Text: Preliminary data 21N50C3, 21N50C3 21N50C3, 21N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		PDF SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 21n50c3 TRANSISTOR SMD 2x t AN-TO220-3-31-01 S4565 s4585 SPA21N50C3 SPB21N50C3 SPI21N50C3 SPP21N50C3 21N50C

    21n50c3

    Abstract: 21N50C PG-TO263 21n50 SPP21N50C3 PG-TO263-3-2 SPB21N50C3
    Text: 21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB21N50C3 PG-TO263 Q67040-S4566 21N50C3 21n50c3 21N50C PG-TO263 21n50 SPP21N50C3 PG-TO263-3-2 SPB21N50C3

    24N50

    Abstract: 21N50 26N50 N50 DIODE IXFH26N50 .24n50 IXFH 24N50 IXFH24N50
    Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 21 N50 IXFH/IXFM 24 N50 IXFH 26 N50 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original     		PDF 21Node 21N50 24N50 26N50 O-204AE 24N50 21N50 26N50 N50 DIODE IXFH26N50 .24n50 IXFH 24N50 IXFH24N50

    21N50ES

    Abstract: 21N50 TO3P package to-247 to-220 to-3p 21N50E
    Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMV21N50ES MS5F7233 H04-004-05 H04-004-03 21N50ES 21N50 TO3P package to-247 to-220 to-3p 21N50E

    21n50

    Abstract: IXFH21N50
    Text: HiPerFET Power MOSFETs VDSS IXFH/IXFT 21N50 IXFH/IXFT 24N50 IXFH/IXFT 26N50 V DSS Tj =25°Cto150°C 500 V vDQB Tj = 25° C to 150° C; RGS= 1 Mi2 500 V V os Continuous ±20 V vGSM Transient ±30 V 21 24 26 84 96 104 21 24 26 A A A A A A A A A 30 mJ 5 V/ns


    OCR Scan     		PDF 21N50 24N50 26N50 Cto150 26N50 IXFH21N50

    21N50

    Abstract: 6N80 MOSFET 11N80 PAGE-42 K 15N60 6N80A IXTM21N50 IXTH7P50
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channell Enhancement-Mode Type V DSS max. t jm = 150° c ► New IXTM 12N50A V 500 IXTM 21N50 IXTM 24N50 *025 □ DS<on C ies typ. C res typ. p PF PF K/W W LL 12 0.4 2800 70 600 120 0.7 180 5b 21 24 0.25 0.23 4200


    OCR Scan     		PDF 12N50A 21N50 24N50 15N60 20N60 6N80A 11N80 13N80 6N90A 10N90 6N80 MOSFET 11N80 PAGE-42 K 15N60 IXTM21N50 IXTH7P50

    21n50

    Abstract: 24n50
    Text: nixYS MegaMOS FET IXTH/IXTM 21N50 IXTH/IXTM 24N50 p VDSS ^D25 500 V 500 V 21 A 24 A DS on 0.25 Q 0.23 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V„ss Tj =25°C to150°C 500 V vDQR ^ 500 V Vos VGSM Continuous ±20 V Transient ±30


    OCR Scan     		PDF 21N50 24N50 to150 O-247 T0-204A T0-204

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S V DSS MegaMOS FET IXTH/21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500


    OCR Scan     		PDF IXTH/IXTM21N50 IXTH/IXTM24N50 O-247 21N50 24N50 4bflb22b

    IXFH21N50

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFH/21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500


    OCR Scan     		PDF IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFT24N50 IXFH26N50 IXFM26N50 IXFT26N50 IXFH21N50

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    gs 1117 ax

    Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
    Text: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions


    OCR Scan     		PDF IXFH/IXFM21 IXFH26N50 21N50 24N50 26N50 gs 1117 ax 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B