Multilayer Ceramic Dipped Axial and Radial Capacitors
Abstract: 1C20X7R104K050 VISHAY MARKING CODE
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book mlcc dipped a xial and radial vishay vse-db0074-0911 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0074-0911
Multilayer Ceramic Dipped Axial and Radial Capacitors
1C20X7R104K050
VISHAY MARKING CODE
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790D
Abstract: 790D/CTS27
Text: 790D Vishay Sprague Resin-Molded, Radial-Lead Solid Tantalum Capacitors FEATURES • Terminations: Tin/lead SnPb , 100 % Tin (Sn) • Four case sizes precisely molded with a flame retardant epoxy resin • Stand off on all case sizes Pb-free Available RoHS*
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08-Apr-05
790D
790D/CTS27
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9434
Abstract: AN609 SiA414DJ
Text: SiA414DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiA414DJ
AN609
21-Jun-07
9434
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AN609
Abstract: Si5515DC
Text: Si5515DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5515DC
AN609
21-Jun-07
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5622
Abstract: diode 1334 AN609
Text: Si1073X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1073X
AN609
21-Jun-07
5622
diode 1334
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3809
Abstract: 7483 AN609 28728
Text: SUM90N04-3m4P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUM90N04-3m4P
AN609
21-Jun-07
3809
7483
28728
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PDF
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marking codes TSOT23-5
Abstract: SH 05.22 CAT6217 CAT6217-150TD-GT3 CAT6217-180TD-GT3 CAT6217-250TD-GT3 CAT6217-280TD-GT3 CAT6217-285TD-GT3 MO-229 CAT6217-330TDGT3
Text: CAT6217 150mA CMOS LDO Regulator FEATURES DESCRIPTION Guaranteed 150mA output current The CAT6217 is a 150mA CMOS low dropout regulator that provides fast response time during load current and line voltage changes. Low dropout voltage of 90mV typical at 150mA
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CAT6217
150mA
CAT6217
150mA
MD-10011
marking codes TSOT23-5
SH 05.22
CAT6217-150TD-GT3
CAT6217-180TD-GT3
CAT6217-250TD-GT3
CAT6217-280TD-GT3
CAT6217-285TD-GT3
MO-229
CAT6217-330TDGT3
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PDF
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TEDEA
Abstract: Tedea-Huntleigh Tedea-Huntleigh* 355 TEDEA model 380 Tedea-Huntleigh model 355 BELT Weighing scale single LOAD CELL vishay vt 300 wiring schematic Tedea-Huntleigh BY
Text: Model 355 Vishay Tedea-Huntleigh Welded, Hermetically Sealed Load Cell FEATURES • • • • Capacities 5 - 500kg Stainless steel construction OIML R60 and NTEP approved IP68 protection OPTIONAL FEATURES • EEx ia IIC T6 hazardous area approval • FM approval available
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500kg
08-Apr-05
TEDEA
Tedea-Huntleigh
Tedea-Huntleigh* 355
TEDEA model 380
Tedea-Huntleigh model 355
BELT Weighing scale
single LOAD CELL
vishay vt 300 wiring schematic
Tedea-Huntleigh BY
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AN609
Abstract: No abstract text available
Text: SiA511DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiA511DJ
AN609
21-Jun-07
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PDF
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binary to gray code converter using PCB design
Abstract: 001lV binary to gray code converter KAD5610P KAD5610P-12 KAD5610P-17 KAD5610P-21 KAD5610P-25
Text: KAD5610P Preliminary Dual 10-Bit, 250/210/170/125MSPS A/D Converter General Description The KAD5610P is a family of low-power, highperformance, dual-channel 10-bit, analog-to-digital converters. Designed with Kenet’s proprietary FemtoCharge technology on a standard CMOS
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KAD5610P
10-Bit,
250/210/170/125MSPS
KAD5610P
250MSPS.
KAD5610P-25
210MSPS
KAD5610P-21)
170MSPS
binary to gray code converter using PCB design
001lV
binary to gray code converter
KAD5610P-12
KAD5610P-17
KAD5610P-21
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PDF
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binary to gray code converter
Abstract: KAD5612P KAD5612P-12 KAD5612P-17 KAD5612P-21 KAD5612P-25 binary to gray code converter using PCB design 76BF control 001
Text: KAD5612P Preliminary Dual 12-Bit, 250/210/170/125MSPS A/D Converter General Description The KAD5612P is a family of low-power, highperformance, dual-channel 12-bit, analog-to-digital converters. Designed with Kenet’s proprietary FemtoCharge technology on a standard CMOS
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KAD5612P
12-Bit,
250/210/170/125MSPS
KAD5612P
250MSPS.
KAD5612P-25
210MSPS
KAD5612P-21)
170MSPS
binary to gray code converter
KAD5612P-12
KAD5612P-17
KAD5612P-21
binary to gray code converter using PCB design
76BF
control 001
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PDF
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CAT6217
Abstract: CAT6217-150TD-GT3 CAT6217-180TD-GT3 CAT6217-250TD-GT3 CAT6217-280TD-GT3 CAT6217-285TD-GT3 MO-229
Text: CAT6217 150mA CMOS LDO Regulator FEATURES DESCRIPTION Guaranteed 150mA output current The CAT6217 is a 150mA CMOS low dropout regulator that provides fast response time during load current and line voltage changes. Low dropout voltage of 90mV typical at 150mA
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Original
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CAT6217
150mA
CAT6217
150mA
MD-10011,
CAT6217-150TD-GT3
CAT6217-180TD-GT3
CAT6217-250TD-GT3
CAT6217-280TD-GT3
CAT6217-285TD-GT3
MO-229
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PDF
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mosfet 3047
Abstract: AN609 Si5513DC
Text: Si5513DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5513DC
AN609
21-Jun-07
mosfet 3047
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AN609
Abstract: No abstract text available
Text: SiA913DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiA913DJ
AN609
21-Jun-07
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AN609
Abstract: Si5504DC
Text: Si5504DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5504DC
AN609
21-Jun-07
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Untitled
Abstract: No abstract text available
Text: Electrical Data and Dielectric Characteristics Vishay Multilayer Ceramic Dipped Radial Capacitors 200 VDC and 500 VDC DIELECTRIC CHARACTERISTICS DIELECTRIC ACCORDING TO EIA According to CECC C0G NP0 X7R CG C1 (2C1) Capacitance Range: at 1 MHz, 1 V; where C ≤ 1000 pF
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21-Jun-07
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TDC 1013
Abstract: binary to gray code converter using PCB design KAD5512P binary to gray code converter 500MSPS KAD5512HP-25 KAD5512P-25 KAD5512P-50 KAD5514P-12 KAD5514P-21
Text: KAD5512P-50 Preliminary 12-Bit, 500MSPS A/D Converter General Description The KAD5512P-50 is a low-power, high-performance, 12-bit , 50 0MSPS analog-t o-digit al converter designed with Kenet’s proprietary FemtoCharge technology on a standard CMOS process. The
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KAD5512P-50
12-Bit,
500MSPS
12-bit
14-bit
125MSPS
500MSPS.
TDC 1013
binary to gray code converter using PCB design
KAD5512P
binary to gray code converter
KAD5512HP-25
KAD5512P-25
KAD5514P-12
KAD5514P-21
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PDF
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binary to gray code converter using PCB design
Abstract: binary to gray code converter KAD5512P 500MSPS KAD5510P-50 KAD5512P-25 KAD5512P-50 KAD5514P-12 KAD5514P-17 KAD5514P-21
Text: KAD5510P-50 Preliminary 10-Bit, 500MSPS A/D Converter General Description The KAD5510P-50 is a low-power, high-performance, 10-bit , 50 0MSPS analog-t o-digit al converter designed with Kenet’s proprietary FemtoCharge technology on a standard CMOS process. The
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KAD5510P-50
10-Bit,
500MSPS
10-bit
14-bit
125MSPS
500MSPS.
binary to gray code converter using PCB design
binary to gray code converter
KAD5512P
KAD5512P-25
KAD5512P-50
KAD5514P-12
KAD5514P-17
KAD5514P-21
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PDF
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SOt10 Package
Abstract: Optocoupler 701 Optocoupler 16 Pin quad SFH6942 SFH6942AT
Text: SFH6942A Vishay Semiconductors Optocoupler, Phototransistor Output, SOT-223/10, Quad Channel FEATURES • Transistor optocoupler in SOT-223/10 package • End stackable, 1.27 mm spacing • Low current input e3 • Good CTR linearity versus forward current
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SFH6942A
OT-223/10,
OT-223/10
i179077
2002/95/EC
2002/96/EC
SFH6942A
08-Apr-05
SOt10 Package
Optocoupler 701
Optocoupler 16 Pin quad
SFH6942
SFH6942AT
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PDF
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AN609
Abstract: SiA417DJ
Text: SiA417DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiA417DJ
AN609
21-Jun-07
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PDF
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AN609
Abstract: Si1300BDL 300959
Text: Si1300BDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1300BDL
AN609
21-Jun-07
300959
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AN609
Abstract: No abstract text available
Text: Si4409DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4409DY
AN609
21-Jun-07
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k 2761
Abstract: MTA-156 A 2761 I 4 502 5881 tyco 506 K 2761 I 54q1 46411
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC D IST REVISIO N S RESERVED. C O R P O R A T IO N . D E S C R IP T IO N P ECO—0 7 —O1 21JUN07
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OCR Scan
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UL94V-2
MTA-156
31MAR2000
k 2761
A 2761 I
4 502 5881
tyco 506
K 2761 I
54q1
46411
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS U N P U B LIS H E D . COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC REVISIONS D IST 00 ALL RIG HTS R E S E R V E D . D ESC R IPTIO N AA1 ECO —0 7 —01 4741 KW DC 21JUN07 ‘MAX CUTOF D 4.1 9 f [.1 6 5 ] 3.
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21JUN07
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