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    C&K U21J1AV2QE2

    SWITCH ROCKER DPDT 5A 120V
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    SWITCH ROCKER DPDT 5A 120V
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    21J1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT,RN2108CT,RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


    Original     		PDF RN2107CT RN2109CT RN2107CT RN2108CT RN1107CT RN1109CT RN2108CT

    RN1107ACT

    Abstract: RN1108ACT RN2107ACT
    Text: RN1107ACT~RN1109ACT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1107ACT,RN1108ACT,RN1109ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		PDF RN1107ACT RN1109ACT RN1108ACT RN2107ACT RN2109ACT RN1108ACT RN1107ACT

    RN1112ACT

    Abstract: RN1113ACT RN2112ACT RN2113ACT
    Text: RN2112ACT,RN2113ACT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112ACT,RN2113ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		PDF RN2112ACT RN2113ACT RN1112ACT, RN1113ACT RN1112ACT RN1113ACT RN2113ACT

    RN1101ACT

    Abstract: RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN1106ACT RN2101ACT RN2106ACT
    Text: RN1101ACT~RN1106ACT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用


    Original     		PDF RN1101ACT RN1106ACT RN1102ACT RN1103ACT RN1104ACT RN1105ACT RN2101ACT RN2106ACT RN1103ACT RN1106ACT RN2101ACT RN2106ACT

    2SC6026CT

    Abstract: 2SA2154CT
    Text: 2SC6026CT シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026CT ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm 0.6±0.05 高耐圧です。 • コレクタ電流が大きい。: IC = 100 mA (最大)


    Original     		PDF 2SC6026CT 2SA2154CT 2SC6026CT 2SA2154CT

    Untitled

    Abstract: No abstract text available
    Text: RN2110CT,RN2111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110CT, RN2111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02


    Original     		PDF RN2110CT RN2111CT RN2110CT, RN1110CT, RN1111CT

    Untitled

    Abstract: No abstract text available
    Text: RN1101CT ~ RN1106CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101CT, RN1102CT, RN1103CT RN1104CT, RN1105CT, RN1106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications


    Original     		PDF RN1101CT RN1106CT RN1101CT, RN1102CT, RN1103CT RN1104CT, RN1105CT, RN2101CT RN2106CT

    Untitled

    Abstract: No abstract text available
    Text: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT, RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02


    Original     		PDF RN1110CT, RN1111CT RN2110CT, RN2111CT

    Untitled

    Abstract: No abstract text available
    Text: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT, RN2108CT, RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications


    Original     		PDF RN2107CT RN2109CT RN2107CT, RN2108CT, RN1107CT RN1109CT

    Untitled

    Abstract: No abstract text available
    Text: RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112CT, RN1113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02


    Original     		PDF RN1112CT RN1113CT RN1112CT, RN2112CT, RN2113CT

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)


    Original     		PDF 2SA2154CT 100mA 2SC6026CT

    RN1107ACT

    Abstract: RN1108ACT RN2107ACT
    Text: RN1107ACT ~ RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm TOP View 0.6±0.05


    Original     		PDF RN1107ACT RN1109ACT RN1107ACT, RN1108ACT, RN2107ACT RN2109ACT RN1108AClled RN1107ACT RN1108ACT

    Untitled

    Abstract: No abstract text available
    Text: RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm


    Original     		PDF RN1112CT RN1113CT RN2112CT, RN2113CT

    Untitled

    Abstract: No abstract text available
    Text: RN1101CT ~ RN1106CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101CT,RN1102CT,RN1103CT RN1104CT,RN1105CT,RN1106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications


    Original     		PDF RN1101CT RN1106CT RN1101CT RN1102CT RN1103CT RN1104CT RN1105CT RN2101CT RN2106CT

    Untitled

    Abstract: No abstract text available
    Text: RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107CT,RN1108CT,RN1109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


    Original     		PDF RN1107CT RN1109CT RN1107CT RN1108CT RN2107CT RN2109CT RN1108CT

    Untitled

    Abstract: No abstract text available
    Text: RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • •


    Original     		PDF RN1112ACT, RN1113ACT RN1112ACT RN2112ACT, RN2113ACT

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)


    Original     		PDF 2SA2154CT 100mA 2SC6026CT

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.)


    Original     		PDF 2SA2154CT 100mA 2SC6026CT

    RN1110ACT

    Abstract: RN1111ACT RN2110ACT RN2111ACT
    Text: RN1110ACT, RN1111ACT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1110ACT,RN1111ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		PDF RN1110ACT, RN1111ACT RN1110ACT RN2110ACT, RN2111ACT RN111ACT RN1111ACT RN2110ACT RN2111ACT

    RN1110ACT

    Abstract: RN1111ACT RN2110ACT RN2111ACT
    Text: RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm


    Original     		PDF RN2110ACT RN2111ACT RN1110ACT, RN1111ACT RN1110ACT RN1111ACT RN2111ACT

    Untitled

    Abstract: No abstract text available
    Text: RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107CT,RN1108CT,RN1109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications •


    Original     		PDF RN1107CT RN1109CT RN1107CT RN1108CT RN2107CT RN2109CT RN1108CT

    RN1112ACT

    Abstract: RN1113ACT RN2112ACT RN2113ACT
    Text: RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm


    Original     		PDF RN1112ACT, RN1113ACT RN1112ACT RN2112ACT, RN2113ACT RN1113ACT RN2112ACT RN2113ACT

    Untitled

    Abstract: No abstract text available
    Text: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications


    Original     		PDF RN2101CT RN2106CT RN2101CT RN2102CT RN2103CT RN2104CT RN2105CT RN1101CT RN1106CT

    641240-6

    Abstract: MTA-100 2-641240-6
    Text: DR/4W1NG M A D E THIS DRAWING IN 4 THIRD ANGLE IS UNPUBLISHED. <Z> PROJECTION LOC RELEASED FOR PUBLICATION COPYRIGHT 19 BY A M P INCORPORATED. DIST CM ALL INTERNATIONAL RIGHTS RESERVED. 54 REVISIONS ZONE LTR DESCRIPTION DATE REACT - 2 , - 4 , - 5 , - 6 , - 8 , 1 0


    OCR Scan     		PDF UL94V-2 MTA-100 rae21] /home/qmp24] 641240-6 2-641240-6