Untitled
Abstract: No abstract text available
Text: 30 Volts 1.7A Avg. 21DQ03L SBD •OUTLINE DRAWING mm ■最大定格 Maximum Ratings Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 30 平 均 整 流 電 流 Average Rectified Forward Current IO 50Hz正弦半波通電抵抗負荷
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21DQ03L
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21DQ03L
Abstract: No abstract text available
Text: 1.7A Avg. 30 Volts SBD 21DQ03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 30 平 均 整 流 電 流 Average Rectified Forward Current IO 50Hz正弦半波通電抵抗負荷
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21DQ03L
21DQ03L
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21DQ03L
Abstract: No abstract text available
Text: SBD Type : 21D 21DQ03L OUTLINE DRAWING FEATURES * Miniature Size * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings
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21DQ03L
30volts
100volts
21DQ03L
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21DQ03L
Abstract: No abstract text available
Text: SBD Type : 21D 21DQ03L OUTLINE DRAWING FEATURES * Miniature Size * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 30volts trough 100volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings
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21DQ03L
30volts
100volts
21DQ03L
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3PHA 20
Abstract: 3PFB 60 3PHA 3PRA 20 CL6B030 3PRA 60 EP10QY04 EP10HY marking code s4 SMc 3pra
Text: マーキング仕様 MARKING STANDARD 日本インターの一般用整流素子は,次表に示す仕様で製品型名などがマークされます。 1. AXIAL LEAD TYPE 2. CHIP TYPE/SOD-123 TYPE 適用素子名 Device Type No. マーキング仕様
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TYPE/SOD-123
10DDA
EP05DA
EP05DA40
10JDA
10EDA
10EDB
EC10DS
3PHA 20
3PFB 60
3PHA
3PRA 20
CL6B030
3PRA 60
EP10QY04
EP10HY
marking code s4 SMc
3pra
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FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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Untitled
Abstract: No abstract text available
Text: SBD 構 Type:21DQ03L •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 : 高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings
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Type21DQ03L
21DQ03L
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Untitled
Abstract: No abstract text available
Text: SBD 構 Type:21DQ03L •OUTLINE DRAWING 造 :ショットキ・バリア・ダイオード リード線型 Construction: Schottky Barrier Diode Axial Lead Type 用 途 : 高周波整流用 Application: High Frequency Rectification ■最大定格 / Maximum Ratings
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Type21DQ03L
21DQ03L
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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30PHA20
Abstract: 10EQMA04 21DQ09 DIODES ta-59 EP10QY04 10eqma
Text: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM(mA) 25°C Tjmax (°C) Case Outline Axial Lead Type 11EQS03L 11EQS04 10EQMA04 11EQS06 11EQS09 11EQS10 10EHA20 30 40 40 60 90 100 200 1 1 1 1 1 1 1 Ta=55℃ Ta=48℃ Ta=43℃
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11EQS03L
11EQS04
10EQMA04
11EQS06
11EQS09
11EQS10
10EHA20
11EQ04
11EQ06
11EQ09
30PHA20
21DQ09 DIODES
ta-59
EP10QY04
10eqma
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21DQ03L
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 21DQ03L 2a / s o v FEATURES o Miniature Size M ti§Idia o Extremely Low Forward Voltage Drop o Low Power Loss, High Efficiency 0.9 .035 DIA o High Surge Capability 0.7C027) ~ 1 _26(1.02) MIN 020 Volts thru 100 Volts Types Available
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OCR Scan
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21dq03l
052mm
7C027)
1IWQ31
bbl51fi3
21DQ03L
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 21DQ03L 2a / s o v FEATURES o M iniature Size M üi§î d ia o E xtrem ely Low Forw ard V oltage Drop o Low Pow er Loss, High Efficiency 0.9C035 DIA 0.7C027) o High Surge Capability 0 2 0 V olts thru 100 Volts Types Available 26 1.02)
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OCR Scan
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21DQ03L
9C035)
7C027)
10xi0m
btlS123
DDD17Ã
JUMC710H
bblS123
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50PQSA045
Abstract: 21DQ10 50PHSA12 11EQS04 11DQ10 11EQS10 31DQ04 10EHA20 21dq03l 11DQ04
Text: Latest Data sheets are available at URL : http://www.niec.to.jp/ f f * "fy"' - Mton Inter Electronics Corporation •FOREIGN SALES V The value would changed without notice. Printed in MARCH 2009 1-19-5 Nishi-Shinjuku.Meiho Bidg.#2 Shinjuku-ku, Tokyo 16 0-0 023 JA PA N
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11EQS03L
11EQS04
11EQS06
11EQS10
10EHA20
11EQ04
11EQ06
11EQ10
11DQ03L
11DQ04
50PQSA045
21DQ10
50PHSA12
11DQ10
31DQ04
21dq03l
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30KF60B
Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166
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OCR Scan
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1N4001
1N4002
1N4004
1N4005
1N4006
1N4007
2VF10CT
F20CT
F30CT
F40CT
30KF60B
10EF1
NSF03A20
C25P10Q
F10P10Q
C25P40F
KSF25A120B
C10P10Q
61MQ60
c16p40f
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F10P100
Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04
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OCR Scan
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11EQS03L
11EQS02L
11EQ03
11EQ04
11EQ05
11EQ06
11EQ09
11EQ10
11EQS03
11EQS04
F10P100
10EF1
12MF30
diode f40c
60KQ10B
30MF40
F10KF20B
12MF40
C16P04Q
C25P40F
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