SiA517DJ
Abstract: S09-1808
Text: SPICE Device Model SiA517DJ Vishay Siliconix N-Channel and P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over
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SiA517DJ
18-Jul-08
S09-1808
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7495 datasheet
Abstract: 7495 4413 AN609
Text: SiR172DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiR172DP
AN609,
21-Sep-09
7495 datasheet
7495
4413
AN609
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datasheet of 8870
Abstract: AN609
Text: Si7139DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si7139DP
AN609,
21-Sep-09
datasheet of 8870
AN609
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IRFD9210
Abstract: No abstract text available
Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion
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IRFD9210,
SiHFD9210
2002/95/EC
18-Jul-08
IRFD9210
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IRFD224
Abstract: No abstract text available
Text: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HVMDIP RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the
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IRFD224,
SiHFD224
18-Jul-08
IRFD224
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IRFD214
Abstract: n mosfet low vgs
Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT
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IRFD214,
SiHFD214
2002/95/EC
18-Jul-08
IRFD214
n mosfet low vgs
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s0918
Abstract: IRFD9220
Text: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel
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IRFD9220,
SiHFD9220
2002/95/EC
18-Jul-08
s0918
IRFD9220
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IRFD220
Abstract: SiHFD220-E3 IRFD220PBF
Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFD220,
SiHFD220
2002/95/EC
18-Jul-08
IRFD220
SiHFD220-E3
IRFD220PBF
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Untitled
Abstract: No abstract text available
Text: Easy Profile 256 No-Clean Solderpaste Product Description Physical Properties Data given for Sn63Pb37 90% metal, -325+500 mesh Easy Profile® 256 is a no-clean, air or nitrogen reflowable, solder paste specifically designed for maximum robustness in reflow profiling and stencil
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Sn63Pb37
EP256
21Sep09
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Untitled
Abstract: No abstract text available
Text: 2.0-18.0 GHz GaAs MMIC Buffer Amplifier September 2009 - Rev 21-Sep-09 CMM4000-BD Features Chip Device Layout Self Bias Architecture On-Chip Drain Bias Coil/DC Blocking 8.5 dB Small Signal Gain 4.5 dB Noise Figure +19.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883
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21-Sep-09
CMM4000-BD
MIL-STD-883
viaD-000V
PB-CMM4000-BD-0000
CMM4000-BD
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Untitled
Abstract: No abstract text available
Text: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
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T8514VB
2002/95/EC
2002/96/EC
T8514VB
18-Jul-08
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SiS426DN
Abstract: SiS426DN-T1-GE3
Text: SiS426DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0045 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V 35g VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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SiS426DN
2002/95/EC
SiS426DN-T1-GE3
18-Jul-08
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AN609
Abstract: SiA431DJ
Text: SiA431DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiA431DJ
AN609,
21-Sep-09
AN609
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IRLD014
Abstract: No abstract text available
Text: IRLD014, SiHLD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5 V Available • For Automatic Insertion 0.20 RoHS* Qg (Max.) (nC) 8.4 • End Stackable Qgs (nC) 2.6 • Logic-Level Gate Drive
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IRLD014,
SiHLD014
2002/95/EC
18-Jul-08
IRLD014
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125-91-9
Abstract: AN609 Si7938DP
Text: Si7938DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si7938DP
AN609,
21-Sep-09
125-91-9
AN609
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD SHIELDING: STEEL NICKEL PLATED QUALITY CLASS: 3 AS PER IEC60 603-13 A ENVIRONMENTAL
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UL94-V0
IEC60
20-NOV-12
05-NOV-12
23-FEB-12
07-DEC-09
19-NOV-09
21-SEP-09
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MLP66-40
Abstract: SiC769CD SiC769CD-T1-E3
Text: New Product SiC769CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions
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SiC769CD
18-Jul-08
MLP66-40
SiC769CD-T1-E3
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kester Sn62Pb36Ag02
Abstract: Sn63pB37 temp profile
Text: R500 Dispensable Water-soluble Solder Paste for Leaded Alloys Product Description Physical Properties Kester R500 is a water-soluble solder paste formula specifically designed as a consistent dot dispensing paste for automated dispense equipment. This solder paste exhibits excellent wetting
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Sn63Pb37
10rpm
21Sep09
kester Sn62Pb36Ag02
Sn63pB37 temp profile
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AN609
Abstract: No abstract text available
Text: Si5414DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si5414DC
AN609,
21-Sep-09
AN609
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IRLD024
Abstract: Marking IRLD024
Text: IRLD024, SiHLD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 18 • End Stackable Qgs (nC) 4.5 • Logic-Level Gate Drive
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IRLD024,
SiHLD024
2002/95/EC
18-Jul-08
IRLD024
Marking IRLD024
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IRFD024
Abstract: No abstract text available
Text: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature
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IRFD024,
SiHFD024
2002/95/EC
18-Jul-08
IRFD024
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IRFD9110
Abstract: IRFD9110PBF
Text: IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HVMDIP Available RoHS* COMPLIANT DESCRIPTION
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IRFD9110,
SiHFD9110
18-Jul-08
IRFD9110
IRFD9110PBF
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155910
Abstract: No abstract text available
Text: REVISIONS LTR DESCRI PT IDN DATE FECHA DWN APVD DI B U JD APRDBO 01 26 SEP 01 E. L ALH EC LMOO 02 33 01 09 DCT 01 E. L ALH REVISED PER ECQ-09-022178 21SEP09 EC G1 -—4 / 1 1 / . 1 1 vn j P—- oYJ r\ “—H \ Y 8,73 A 10,39 ± ,18 1 1 7 \ SECTION KK AEG
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ECQ-09-022178
21SEP09
09MAY94
155910
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AEG T 250 N 700
Abstract: m 57746
Text: 7 8 TM1S B fe A V ÌH g T S H jPU B.ISHC!r COPYRIGHT 19 RELEASE! FOR PUBLICATION BY AMP INCORPORATED. DIST lK ,19 EH ALL RIGHTS RESERVED. 12 REVISIONS p LTR DESCRIPTION DATE APVD dwn □ □RIGINAL DRAWING A R E LE A S E PER NPR PD 96-0054 B0AUG96 LMH A1
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B0AUG96
ECQ-09-022178
21SEP09
04DEC95
4DEC95
AEG T 250 N 700
m 57746
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